976 resultados para Marilhat, Prosper, 1811-1847.
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国家自然科学基金资助课题(60537060)
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分别用稀盐酸、王水以及(NH_4)_2S溶液处理p-GaN表面,通过测试样品表面Ols的X射线光电子能谱(XPS),比较了这些溶液去除p-GaN表面氧化层的能力;在经不同溶液处理后的样品表面,以相同的条件制作Ni/Au电极,并测试其与p-GaN的比接触电阻,结果表明经稀盐酸处理后的样品表面,由于其氧含量较高,不能与Ni/Au形成良好的欧姆接触,而经王水和(NH_4)_2S溶液处理后的p-GaN表面,能与Ni/Au形成良好的欧姆接触;最后,通过比较样品表面的Ga/N原子浓度比,探讨了王水处理p-GaN表面能够形成良好欧姆接触的原因.
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通过改变氢气对硅烷气体的稀释程度,并保持其他的沉积参量不变,用等离子体增强化学气相沉积(PECVD)方法成功地制备出非晶/微晶相变过渡区域的硅薄膜样品。测量了样品的室温光电导和暗电导,样品的光电性能优越,在50 mW·cm~(-2)的白光照射下,光电导和暗电导的比值达到10~6。在室温下用微区喇曼谱研究了薄膜的微结构特性,用高斯函数对喇曼谱进行了拟合分析。结果表明,在我们的样品制备条件下,当H_2和SiH_4的流量比R较小时,样品表现出典型的非晶硅薄膜 的结构特性;随流量比R的增大,薄膜表现出两相结构,其中的微晶成分随氢稀释比的增大逐渐增多;用量子尺寸效应估算了两个高氢稀释样品(R > 50)中微晶粒子的平均尺寸大小为2.4 nm左右;样品的中程有序度随氢稀释程度的增加而增大。
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The on-way peak overpressure and flame propagation speed of gas deflagration in the tube with obstacles are important data for process safety. Based on carbon monoxide deflagration experiments, the paper presents a multi-zone integration model for calculation of on-way peak overpressure, in which the tube with obstacles is considered as a series of venting explosion enclosures which link each others. The analysis of experimental data indicates that the on-way peak overpressure of gas deflagration can be correlated as an empirical formula with equivalence ratio of carbon monoxide oxidation, expansion ratio, flame path length, etc., and that the on-way peak overpressure exhibits a linear relationship with turbulence factor and flame propagation speed. An empirical formula of flame propagation speed is given.