The impact of incident angle on multiple-bit upset in SRAMs

Autoria(s): ZhangQX; HouMD; LiuJ; WangZG; JinYF; ZhuZY; SunYM
Data(s)

2003
Identificador

http://ir.impcas.ac.cn/handle/113462/1847

http://www.irgrid.ac.cn/handle/1471x/128071
Fonte

ZhangQX；HouMD；LiuJ；WangZG；JinYF；ZhuZY；SunYM.The impact of incident angle on multiple-bit upset in SRAMs,NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2003,209(2):367-370
Palavras-Chave #multiple-bit upset #static random access memory #angular effect #energy deposited #lateral distribution
Tipo

期刊论文
Acesso ao item digital