Template Notas

Ilustração componente do jogo “Musikinésia (http://www.loa.sead.ufscar.br/musikinesia.php)” desenvolvido pela equipe do Laboratório de Objetos de Aprendizagem da Universidade Federal de São Carlos (LOA/UFSCar).

Template Lousa

Ilustração componente do jogo “Musikinésia (http://www.loa.sead.ufscar.br/musikinesia.php)” desenvolvido pela equipe do Laboratório de Objetos de Aprendizagem da Universidade Federal de São Carlos (LOA/UFSCar).

Template Teclado

Ilustração componente do jogo “Musikinésia (http://www.loa.sead.ufscar.br/musikinesia.php)” desenvolvido pela equipe do Laboratório de Objetos de Aprendizagem da Universidade Federal de São Carlos (LOA/UFSCar).

Photoluminescence properties of PZT 52/48 synthesized by microwave hydrothermal method using PVA with template

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Preparation of hierarchically structured porous aluminas by a dual soft template method

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Novel Aspects of the Purpose-Built Materials Strategy: Evidence of Topographic Template Effect and Oriented Attachment Growth Mechanism

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Efeitos da adição de átomos de Mn na rede do GaN via métodos de estrutura eletrônica

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Optical characterization of cubic AlGaN/GaN quantum wells

Cubic phase group III-nitrides were grown using RF plasma assisted Molecular Beam Epitaxy on GaAs (001) substrates. High-resolution X-ray diffraction, photoluminescence, cathodoluminescence and photoreflectance measurements were employed to characterize the structural and optical properties of GaN/AlxGa1-xN Multi Quantum Well (MQW) structures, in which both Aluminum content and well widths were varied. The observed quantized states are in agreement with first-principles based theoretical calculations.

Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate

Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. Optical micrographs of the GaN epilayers intentionally grown at Ga excess reveal the existence of surface irregularities such as bright rectangular structures, dark dots surrounded by rectangles and dark dots without rectangles. Micro-Raman spectroscopy is used to study the structural properties of these inclusions and of the epilayers in greater detail. We conclude that the observed irregularities are the result of a melting process due to the existence of a liquid Ga phase on the growing surface.

Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(001) substrates

The optical properties of cubic GaN epitaxial layers were investigated by modulated photoreflectance (PR) and photoluminescence in the temperature interval from 5 to 300 K. The epilayers were grown on GaAs(001) substrates by molecular beam epitaxy using a nitrogen RIF-activated plasma source. The PR spectra show a transition which is well fitted using the third-derivative functional form of the unperturbed dielectric function, which we interpret as band-to-band transition. Our results allow determination of the temperature dependence of the main gap of c-GaN and give insights into the residual strain in the film, as well as allow us to estimate the binding energy of the complex formed by an exciton bound to a neutral acceptor. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Controlling the growth of zirconia needles precursor from a liquid crystal template

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Inorganic-Organic Nanocomposite Assembly Using Collagen as a Template and Sodium Tripolyphosphate as a Biomimetic Analog of Matrix Phosphoprotein

Nanocomposites created with polycarboxylic acid alone as a stabilization agent for prenucleation clusters-derived amorphous calcium phosphate exhibit nonperiodic apatite deposition. In the present study, we report the use of inorganic polyphosphate as a biomimetic analog of matrix phosphoprotein for directing poly(acrylic acid)-stabilized amorphous nano-precursor phases to assemble into periodic apatite-collagen nanocomposites. The sorption and desorption characteristics of sodium tripolyphosphate to type I collagen were examined. Periodic nanocomposite assembly with collagen as a template was demonstrated with TEM and SEM using a Portland cement-based resin composite and a phosphate-containing simulated body fluid. Apatite was detected within the collagen at 24 h and became more distinct at 48 h, with prenucleation clusters attaching to the collagen fibril surface during the initial infiltration stage. Apatite-collagen nanocomposites at 72 h were heavily mineralized with periodically arranged intrafibrillar apatite platelets. Defect-containing nanocomposites caused by desorption of TPP from collagen fibrils were observed in regions lacking the inorganic phase.

Zirconia foams prepared by integration of the sol-gel method and dual soft template techniques

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Relaxation effects on the negatively charged Mg impurity in zincblende GaN

The electronic structure of Mg impurity in zincblende (c-)GaN is investigated by using the ab initio full potential linear-augmented plane-wave method and the local density-functional approximation. Full geometry optimization calculations, including nearest and next-nearest neighbor displacements, are performed for the impurity in the neutral and negatively charged states. A value of 190 ± 10 meV was obtained for the Franck-Condon shift to the thermal energy, which is in good agreement with that observed in recent low temperature photoluminescence and Hall-effect measurements. We conclude that the nearest and next-nearest neighbors of the Mg impurity replacing Ga in C-GaN undergo outward relaxations which play an important role in the determination of the center acceptor energies.

Nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering

The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-tnagnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N 2/H 2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (T s ≤ 420K). The main effects resulting from the deposition parameters variations on the films properties were related to the presence of hydrogen in the plasma. The X-ray diffraction analysis indicates that the grain sizes (∼15nm) and the crystallized volume fraction significantly decrease when hydrogen is present in the plasma. The optical absorption experiments indicate that the hydrogenated films have absorption edges very similar to that of GaN single crystal films reported in the literature, while the non-hydrogenated samples present larger absorption tails encroaching into the gap energies.