Relaxation effects on the negatively charged Mg impurity in zincblende GaN
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
27/05/2014
27/05/2014
01/11/1999
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Resumo |
The electronic structure of Mg impurity in zincblende (c-)GaN is investigated by using the ab initio full potential linear-augmented plane-wave method and the local density-functional approximation. Full geometry optimization calculations, including nearest and next-nearest neighbor displacements, are performed for the impurity in the neutral and negatively charged states. A value of 190 ± 10 meV was obtained for the Franck-Condon shift to the thermal energy, which is in good agreement with that observed in recent low temperature photoluminescence and Hall-effect measurements. We conclude that the nearest and next-nearest neighbors of the Mg impurity replacing Ga in C-GaN undergo outward relaxations which play an important role in the determination of the center acceptor energies. |
Formato |
541-545 |
Identificador |
http://dx.doi.org/10.1002/(SICI)1521-3951(199911)216:1<541::AID-PSSB541>3.0.CO;2-W Physica Status Solidi (B) Basic Research, v. 216, n. 1, p. 541-545, 1999. 0370-1972 http://hdl.handle.net/11449/65868 10.1002/(SICI)1521-3951(199911)216:1<541::AID-PSSB541>3.0.CO;2-W WOS:000084193900104 2-s2.0-0033242994 |
Idioma(s) |
eng |
Relação |
Physica Status Solidi B: Basic Research |
Direitos |
closedAccess |
Tipo |
info:eu-repo/semantics/article |