Optical characterization of cubic AlGaN/GaN quantum wells
Contribuinte(s) |
Universidade Estadual Paulista (UNESP) |
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Data(s) |
20/05/2014
20/05/2014
16/07/2002
|
Resumo |
Cubic phase group III-nitrides were grown using RF plasma assisted Molecular Beam Epitaxy on GaAs (001) substrates. High-resolution X-ray diffraction, photoluminescence, cathodoluminescence and photoreflectance measurements were employed to characterize the structural and optical properties of GaN/AlxGa1-xN Multi Quantum Well (MQW) structures, in which both Aluminum content and well widths were varied. The observed quantized states are in agreement with first-principles based theoretical calculations. |
Formato |
129-134 |
Identificador |
http://dx.doi.org/10.1002/1521-396X(200207)192:1<129 Physica Status Solidi A-applied Research. Weinheim: Wiley-v C H Verlag Gmbh, v. 192, n. 1, p. 129-134, 2002. 0031-8965 http://hdl.handle.net/11449/32591 10.1002/1521-396X(200207)192:1<129 WOS:000177202000024 |
Idioma(s) |
eng |
Publicador |
Wiley-Blackwell |
Relação |
Physica Status Solidi A: Applied Research |
Direitos |
closedAccess |
Tipo |
info:eu-repo/semantics/article |