Deposition of Au/TiO2 film by pulsed laser

Au nanoparticles, which were photoreduced by a Nd:YAG laser in HAuCl4 solution containing TiO2 colloid and accompanied by the TiO2 particles, were deposited on the substrate surface. The film consisting of Au/TiO2 particles was characterized by the absorption spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD) analysis. The adhesion between the film and substrate was evaluated by using adhesive tape test. It was found that the presence of TiO2 dramatically enhanced the adhesion strength between the film and the substrate, as well as the deposition rate of film. The mechanism for the deposition of Au/TiO2 film was also discussed. (c) 2005 Elsevier B.V. All rights reserved.

Formation of arrayed holes on metal foil and metal film by multibeam interfering femtosecond laser beams

We report on an optical interference method to fabricate arrayed holes on metal nickel foil and aluminum film deposited on glass substrate by means of five-beam interference of femtosecond laser pulses. Optical microscope and scanning electron microscope observations revealed that arrayed holes of micrometre-order were fabricated on both metal foil and metal film. The present technique allows one-step, large-area, micrometric processing of metal materials for potential industrial applications.

Preparation and optical properties of silicate glasses containing Pd nanoparticles

We report the space selective precipitation of Pd nanoparticles in Pd2+ -doped silicate glass by ultrashort laser pulses irradiation and further annealing. Absorption spectra, transmission electron microscopy, refractive index measurement and Z-scan technique demonstrated that metallic Pd nanoparticles were precipitated in the glass sample after irradiation by an 800-nm femtosecond laser and subsequent annealing at 600 degrees C. We discuss a refractive index change and nonlinear absorption that combines the precipitation of Pd nanoparticles. Crown Copyright (c) 2005 Published by Elsevier B.V. All rights reserved.

Low-temperature hydrothermal growth of oriented [0001] ZnO film

Well-aligned ZnO films have been successfully prepared by using low-temperature hydrothermal approach on (0001) sapphire substrates that were pre-coated with a ZnO nano-layer by dip-coating. The characterizations of scanning electron microscopy (SEM) and X-ray diffraction (XRD) indicate that the ZnO films consist of hexagonal rods that grow along the c axis based on the sapphire substrates. It is found that the size of ZnO rods can be adjusted by an aqueous solution with some methenamine. (c) 2006 Elsevier B.V. All rights reserved.

Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

The nonpolar m-plane (1 (1) over bar 00) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 mu W under a direct current of 20 mA for a 400x400 mu m(2) device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515-516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated. (c) 2007 American Institute of Physics.

非晶硅薄膜制备及其晶化特性研究

用磁控溅射法在K9玻璃上沉积了非晶硅（a—Si）膜和a—Si／Al膜，并将其在流动的N2气氛下进行退火。对退火前后的样品进行Raman光谱、XRD和SEM表征和分析。Raman光谱表明随着退火温度的升高，a-Si膜的散射峰出现了明显的蓝移，但XRD结果表明薄膜仍为非晶态；而a—Si／Al膜在温度很低时就已经开始晶化。

Characterization of m-plane ZnO thin film on gamma-LiAlO2 (100) substrate by metal-organic chemical vapor deposition

Non-polar (1 (1) over bar 00)m-plane ZnO thin film has been prepared on gamma-LiAlO2 (100)substrate via the low pressure metal organic chemical vapor deposition. Obvious intensity variation of the E-2 mode in the polarized Raman spectra and the absorption edge shift in the polarized optical transmission spectra indicate that the m-plane film exhibits optical anisotropy, which have applications in certain optical devices, such as the UV modulator and polarization-dependent beam switch. From the atomic force microscopy images, highly-oriented uniform-sized grains of rectangular shape were observed. (c) 2008 Elsevier B.V. All rights reserved.

Study of thin-film SO2 gas sensors by photometric and ellipsometric methods

Pt-, Pd-, and Zr-doped SnO2 thin films and dopant-free VOx films were fabricated by planar magnetron sputtering. Tests for sensitivity to SO2 for all samples were conducted at 180 degreesC, and the sensitivities were investigated ex situ with photometric and ellipsometric methods at room temperature. It was found that the optical sensitivities as well as the sensitive wavelength region for SnO2 films could be tuned by doping. The Pd-doped SnO2 films had good sensitivity in the visible range, and the Zr-doped in the near IR. The dominant sensitive wavelength region for VOx films fell into the visible range, and the ratio of the sensitivity in the visible to that in the near IR increased with O-2/Ar in the depositing atmosphere. (C) 2001 society of Photo-Optical instrumentation Engineers .

Analysis of electromagnetic propagation in birefringent thin film

In general, the propagating behavior of extraordinary wave in anisotropic materials is different from that in isotropic materials. With the tangential continuity of Maxwell's equations, the electromagnetic propagating behaviors have been investigated at the incident and exit interfaces of the uniaxial anisotropic thin film. The emphasis was placed on two interesting optical phenomena such as homolateral refraction behavior and wide-angle Brewster's phenomenon, which occurred at the interfaces of uniaxial anisotropic thin film.

Simulation of growth process of thin film on non-planar substrate

In (2 + 1) dimension, growth process of thin film on non-planar substrate in Kuramoto-Sivashinsky model is studied with numerical simulation approach. 15 x 15 semi-ellipsoids arranged orderly on the surface of substrate are used to represent initial rough surface. The results show that at the initial stage of growth process, the surface morphology of thin film appears to be grid-structure, and the interface width constantly decreases with the growth time, then reaches minimum. However, the grid-structure becomes ambiguous, and granules of different sizes distribute evenly on the surface of thin film with the increase of growth time. Thereafter, the average size of granules and the interface width gradually increase, and the surface morphology of thin film presents fractal properties. The numerical results of height-height correlation functions of thin film verify the surface morphology of thin film to be fractal for a longer growth time. By fitting of the height-height correlation functions of thin film with different growth times, the growth process is described quantitatively. (c) 2004 Elsevier B.V. All rights reserved.