LD列阵泵浦的Nd:YAG和Nd:GdVO4连续激光器

介绍了一种二极管侧面泵浦激光头的新结构，用Nd:YAG晶体作为工作物质，将此结构下激光头的输入输出性能与传统结构下的输入输出性能进行了比较。此外利用这种新结构，对一种新型晶体Nd:GdVO4进行了实验，获得了连续1064nm的激光输出42.6W，最大光光效率为23.7％。

Self-aligned Coupled Waveguide Distributed Bragg Reflector Lasers

A novel self-aligned coupled waveguide (SACW) multi-quantum-well (MQW) distributed Bragg reflector (DBR) laser is proposed and demonstrated for the first time. By selectively removing the MQW layer and leaving the low SCH/SACW layer the Bragg grating is partially formed on this layer. By optimizing the thickness of the low SCH/SACW layer, a ～80% coupling efficiency between the MQW gain region and the passive region are obtained. The typical threshold current of the SACW DBR laser is 39 mA, the slope efficiency can reach to 0.2 mW/mA and the output power is more than 20 mW with a more than 30dB side mode suppression ratio.

Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer

A passive Q-switched flash-lamp-pumped Nd:YAG laser with the ion-implanted semi-insulating GaAs water is reported．The wafer is implanted with 400keV As~+ ions in the concentration of 10~(16)cm~(-2). Using GaAs wafer as an absorber and an output coupler．62ns pulse duration of single pulse is obtained.

侧面抽运Nd:YAG连续激光器

介绍了一种二极管侧面春运的Nd:YAG连续激光器器，获得了37.9 W的连续1064nm的激光输出，光-光转换效率为23.7%.用光线追迹法对实验中的具体参数进行了数值模拟，指出了实验中的不足之处，对侧面抽运结构的设计作了分析的讨论.

Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers

A fitting process is used to measure the cavity loss and the quasi-Fermi-level separation for Fabry- Perot semiconductor lasers. From the amplified spontaneous emission (ASE) spectrum, the gain spectrum and single-pass ASE obtained by the Cassidy method are applied in the fitting process. For a 1550nm quantum well InGaAsP ridge waveguide laser, the cavity loss of about ～24cm~(-1) is obtained.

注铒a-SiO_x:H中Er~(3+)发光与薄膜微观结构的关系

采用光致发光（PL）谱和傅里叶变换红外（FTIR）谱研究了掺铒a-SiO_x:H(a-SiO_x:H)薄膜在不同退火温度下光学性质和微观结构的变化。PL谱的测量结果表明：薄膜在1.54μm的Er~(3+)发光和750nm处的可风发光随退火温度有相同的变化趋势，这种变化和薄膜在退火过程中微观结构的变化有着密切关系。FTIR谱的分析表明：a-SiO_x:H薄膜是一种两相结构，富硅相镶嵌在富氧相中。两者的成分可近似用a-SiO_(x≈0.3):H和a-SiO_(x≈1.5):H表示，前者性质接近于氢化非晶硅（a-Si:H），后者性质接近于a-SiO_2。富硅相在退火中的变化对Er~(3+)的发光强度有重要影响。

Small Signal Equivalent Circuit Model and Modulation Properties of Vertical Cavity-Surface Emitting Lasers

Small signal equivalent circuit model and modulation properties of vertical cavity-surface emitting lasers (VCSEL's) are presented. The modulation properties both in analytic-equation calculation and in circuit model simulation are studied. The analytic-equation calculation of the modulation properties is calculated by using Mathcad program and the circuit model simulation is simulation is simulated by using Pspice program respectively. The results of calculation and the simulation are in good agreement with each other. Experiment is performed to testify the circuit model.

LD列阵泵浦Nd:YAG连续激光器

介绍了一种二极管侧面泵浦的Nd:YAG连续激光器，采用了简单、实用的侧面泵浦结构，获得37.9W的连续1064 nm的激光多模输出；斜效率为31.5%，光效率为23.7%。文中还对该泵浦头的热透镜效应作了测试。

单晶硅中铒点缺陷及Er-O复合缺陷电子结构的EHMO计算

本文采用集团模型和推广的Hucket分子轨道理论(EHMO)计算c-Si中Er点缺陷及Er-O复合缺陷的原子构型及电子结构。计算结果符合实验及一些文献的第一性原理计算结果,解释了Er有c-Si中的发光特性。

a-SiCx∶H和β-SiC中Er缺陷结构及其1.54μm发光探索

材料科学开放实验室基金,光学信息技术科学教育部开放实验室基金

High Efficiency Al-Free 980 nm InGaAs/ InGaAsP/ InGaP Strained Quantum Well Lasers

于2010-11-23批量导入

Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers

国家自然科学基金

Multi-Wavelength InGaAsP Lasers Grown by LP-MOCVD Selective Area Growth

国家863计划

High power 980 nm InGaAs/AlGaAs strained quantum well lasers

于2010-11-23批量导入