Theoretical gain of strained GeSn0.02/Ge1-x-y ' SixSny ' quantum well laser

Using effective-mass Hamiltonian model of semiconductors quantum well structures, we investigate the electronic structures of the Gamma-conduction and L-conduction subbands of GeSn/GeSiSn strained quantum well structure with an arbitrary composition. Our theoretical model suggests that the band structure could be widely modified to be type I, negative-gap or indirect-gap type II quantum well by changing the mole fraction of alpha-Sn and Si in the well and barrier layers, respectively. The optical gain spectrum in the type I quantum well system is calculated, taking into account the electrons leakage from the Gamma-valley to L-valley of the conduction band. We found that by increasing the mole fraction of alpha-Sn in the barrier layer and not in the well layer, an increase in the tensile strain effect can significantly enhance the transition probability, and a decrease in Si composition in the barrier layer, which lowers the band edge of Gamma-conduction subbands, also comes to a larger optical gain.

Theoretical analysis and experimental study of the space-charge-screening effect in uni-traveling-carrier photodiode

A new optimized structure of an UTC (uni-traveling-carrier) photodiode is developed and epitaxied by metal-organic chemical vapor deposition. We fabricated a UTC photodiode of 30 mu m in diameter. Theoretical simulation based on drift-diffusion model was used to analyze the space-charge-screening effect in UTC photodiode primarily in two aspects: the carrier concentrations and the space electric field. The simulation results were generally in agreement with the experimental data.

Theoretical design and performance of InxGa1-xN two-junction solar cells

The efficiencies of InxGa1-xN two-junction solar cells are calculated with various bandgap combinations of subcells under AM1.5 global, AM1.5 direct and AM0 spectra. The influence of top-cell thickness on efficiency has been studied and the performance of InxGa1-xN cells for the maximum light concentration of various spectra has been evaluated. Under one-sun irradiance, the optimum efficiency is 35.1% for the AM1.5 global spectrum, with a bandgap combination of top/bottom cells as 1.74 eV/1.15 eV. And the limiting efficiency is 40.9% for the highest light concentration of the AM1.5 global spectrum, with the top/bottom cell bandgap as 1.72 eV/1.12 eV.

An optimized design of a fiber optic hydrophone based on a flat diaphragm and multilayer fiber coils: A theoretical approach

In this paper, we present a theoretical approach to optimize the design of a fiber optic hydrophone based on a flat diaphragm and multilayer fiber coils. In this theoretical analysis, both the radial and tangential strain induced fiber length changes are taken into account. The result shows that the position of the fiber coils and the number of the fiber layers have significant effects on the sensitivity, of the hydrophone. By optimizing these parameters, a higher sensitivity can be achieved. Sample hydrophones are fabricated and tested. The experimental result is in good agreement with the theoretical result, which shows this theoretical approach is effective in optimizing the design of the fiber optic hydrophone. (C) 2008 Elsevier Ltd. All rights reserved.

Theoretical investigation of intersubband transition in AlxGa1-xN/GaN/AlyGa1-yN step quantum well

A modified self-consistent method is introduced for the design of AlxGa1-xN/GaN step quantum well (SQW) with the position and energy-dependent effective mass. The effects of nonparabolicity are included. It is shown that the nonparabolicity effect is minute for the lowest subband energy level and grows in size for the higher subband states. The effects of nonparabolicity have significant influence on the transition energies and the oscillator strengths and should be taken into account in the investigation of the optical transitions. The strong asymmetric property introduced by the step quantum well magnifies the weak intersubband transition from the ground state to the third state (1 -> 3). It is shown that in an appropriate scope, the intersubband transition (1 -> 3) has the comparable oscillator strength with transition from the ground state to the second one (1 -> 2), which suggests the possible application of the two-color photodetectors. The results of this work should provide useful guidance for the design of optically pumped asymmetric quantum well lasers and quantum well infrared photodetectors (QWIPs). (c) 2005 Elsevier B.V. All rights reserved.

Theoretical investigation on the phase stability of Nd2Fe14B and site preference of V, Cr, Mn, Zr and Nb

The stability of the excellent permanent magnetic compound Nd2Fe14B and substitution of Fe in the compound by V, Cr, Mn, Zr and Nb are investigated by using interatomic pair potentials which are converted from lattice-inversion method. Calculation shows that the substitution always makes the cell volume larger, and the increase of the volume is almost linear with substituent concentration. The calculated cohesive energy shows that the preferential order of substitution of Fe is Nb, V, Cr, Mn, Zr. Nevertheless, all the five substituting elements should most preferentially replace Fe in the j(2)' site, which has the greatest space among all six Fe sites. (C) 2005 Elsevier B.V. All rights reserved.

Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure

The subband structure and inter-subband transition as a function of gate voltage are determined by solving the Schrodinger and Poisson equations self-consistently in an AlxGa1-xN/GaN heterostructure. Different aluminum mole fraction and thickness of AlxGa1-xN barrier are considered. Calculation results show that energy difference between the first and second subband covers a wide range (from several tens to hundreds milli-electron volt) by applying different gate voltage, which corresponds to the midinfrared and long-wave infrared wavelength scope. Furthermore, such a modulation on the subband transition energy is much more pronounced for the structure with thin barrier. When the applied positive gate voltage is increased, the triangle well formed at the interface turns to be deeper and narrower, which enhances the confinement for electrons. As a result, the overlap between electron wave function at two subbands increases, and thus the optical intersubband transition also enhances its intensity. This tendency is in good agreement with the available data in the literature. (c) 2005 Elsevier B.V. All rights reserved.

Numerical and theoretical analysis of the crosstalk in linear optical amplifiers

The dynamic characteristics, including the crosstalk and relaxation oscillation, of linear optical amplifiers (LOAs) are investigated by small-signal analysis under an averaging carrier density approximation and compared with the results of numerical simulation. The good agreement between the numerical simulation and the small-signal analysis indicated the averaging carrier density is an appropriate approximation for analyzing LOAs. Theoretical analyzes also show that the dynamic properties of the vertical laser fields dominate the dynamic performance of LOAs. Based on the small-signal analysis, a concise equation for the crosstalk under high bit rate was derived, which can be applied to measure the differential gain of LOAs.

Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors

The principle of high-electron-mobility transistor (HEMT) and the property of two-dimensional electron gas (2DEG) have been analyzed theoretically. The concentration and distribution of 2DEG in various channel layers are calculated by numerical method. Variation of 2DEG concentration in different subband of the quantum well is discussed in detail. Calculated results show that sheet electron concentration of 2DEG in the channel is affected slightly by the thickness of the channel. But the proportion of electrons inhabited in different subbands can be affected by the thickness of the channel. When the size of channel lies between 20-25 nm, the number of electrons occupying the second subband reaches the maximum. This result can be used in parameter design of materials and devices.

Theoretical analysis of characteristics of GaxIn1-xNyAs1-y/GaAs quantum well lasers with different intermediate layers

Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layer on the band structure, gain and differential gain of GaInNAs/GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GaInNAs/GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.

Theoretical analysis and experimental study of Fourier transformation of Franz-Keldysh oscillations in GaAs

Fourier transformation (FT) has been used in the theoretical line shape analysis of Franz-Keldysh oscillations (FKOs) in detail by numerical simulations. FKOs from the surface-intrinsic-n(+) GaAs structure were obtained in photoreflectance (PR) measurements with various modulation light intensities and with different strengths of bias light illumination, which were used to change the static electric field in the intrinsic layer of the sample. The FT spectra of the PR spectra, including the real part, imaginary part, and the modulus, were very consistent with the theoretical line shapes. The ratio of the square root of the reduced mass (root mu (L)/root mu (H)) and the ratio of transition strength of the electron heavy hole to the electron light hole were obtained from the PT spectra. In addition, the electric field in the intrinsic layer of the sample without and with bias illumination and the modulation field induced by photomodulation were also obtained. (C) 2000 American Institute of Physics. [S0021-8979(00)02123-X].

Theoretical investigation on quantum well lasers with extremely low vertical beam divergence and low threshold current

A specially designed quantum well laser for achieving extremely low vertical beam divergence was reported and theoretically investigated. The laser structure was characterized by two low index layers inserted between the waveguide layers and the cladding layers. The additional layers were intended to achieve wide optical spread in the cladding layers and strong confinement in the active region. This enabled significant reduction of beam divergence with no sacrifice in threshold current density. The numerical results showed that lasers with extremely low vertical beam divergence from 20 degrees down to 11 degrees and threshold current density of less than 131 A/cm(2) can be easily achieved by optimization of the structure parameters. Influences of individual key structure parameters on beam divergence and threshold current density are analyzed. Attention is also paid to the minimum cladding layer thicknesses needed to maintain low threshold current densities and low internal loss. The near and far field patterns are given and discussed. (C) 1998 American Institute of Physics.

Theoretical analysis of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot lasers

A theoretical study of modal gain in p-doped 1.3 mu m InAs/GaAs quantum dot (QD) lasers is presented. The expression of modal gain is derived, which includes an effective ratio that describes how many QDs contribute to the modal gain. The calculated results indicate that the modal gain with the effective ratio is much smaller than that without the effective ratio. The calculated maximum modal gain is is a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial in achieving a larger maximum modal gain that leads to lower threshold current density and higher differential modal gain. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Theoretical and Experimental Studies of an Ultra-compact Photonic Crystal Corner Mirror Based on Silicon-On-Insulator

An ultra-compact silicon-on-insulator based photonic crystal corner mirror is designed and optimized. A sample is then successfully fabricated with extra losses 1.1 +/- 0.4dB for transverse-electronic (M) polarization for wavelength range of 1510-1630nm.

Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells

Compositional distribution of the quantum well and barrier after quantum well intermixing for GaInP/AlGaInP system was theoretically analyzed on the basis of atom diffusion law. With the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6x6 Luttinger-Kohn Hamiltonian, including spin-orbit splitting effects. TO get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the Luttinger-Kohn model to simplify the computational efforts, since there was a strong warping in the GaInP valence band. At last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.