Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells


Autoria(s): Xu Y; Zhu XP; Song GF; Cao Q; Guo L; Li YZ; Chen LH
Data(s)

2005

Resumo

Compositional distribution of the quantum well and barrier after quantum well intermixing for GaInP/AlGaInP system was theoretically analyzed on the basis of atom diffusion law. With the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6x6 Luttinger-Kohn Hamiltonian, including spin-orbit splitting effects. TO get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the Luttinger-Kohn model to simplify the computational efforts, since there was a strong warping in the GaInP valence band. At last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.

Compositional distribution of the quantum well and barrier after quantum well intermixing for GaInP/AlGaInP system was theoretically analyzed on the basis of atom diffusion law. With the compositional distribution result, the valence subband structure of the intermixed quantum well was calculated on the basis of 6x6 Luttinger-Kohn Hamiltonian, including spin-orbit splitting effects. TO get more accurate results in the calculation, a full 6-band problem was solved without axial approximation, which had been widely used in the Luttinger-Kohn model to simplify the computational efforts, since there was a strong warping in the GaInP valence band. At last, the bandgap energy of the intermixed quantum well was obtained and the calculation result is of much importance in the analysis of quantum well intermixing experiments.

zhangdi于2010-03-29批量导入

zhangdi于2010-03-29批量导入

SPIE.; Chinese Opt Soc.; China Inst Commun.; Beijing Assoc Commun & Informat.; Beijing Univ Posts & Telecommun.; IEEE COMSOC.; IEEE LEOS.; Commun Inst China, Opt Commun Tech Comm.; Opt Soc Amer.; Tsinghua Univ.

Chinese Acad Sci, Inst Semicond, Beijing 100864, Peoples R China

SPIE.; Chinese Opt Soc.; China Inst Commun.; Beijing Assoc Commun & Informat.; Beijing Univ Posts & Telecommun.; IEEE COMSOC.; IEEE LEOS.; Commun Inst China, Opt Commun Tech Comm.; Opt Soc Amer.; Tsinghua Univ.

Identificador

http://ir.semi.ac.cn/handle/172111/10132

http://www.irgrid.ac.cn/handle/1471x/66067

Idioma(s)

英语

Publicador

SPIE-INT SOC OPTICAL ENGINEERING

1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA

Fonte

Xu, Y; Zhu, XP; Song, GF; Cao, Q; Guo, L; Li, YZ; Chen, LH .Theoretical analysis of the bandgap for the intermixed GaInP/AlGaInP quantum wells .见:SPIE-INT SOC OPTICAL ENGINEERING .SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) ,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2005,5624: 91-95

Palavras-Chave #半导体物理 #quantum well intermixing
Tipo

会议论文