Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature

The behavior of room temperature self-sustained current oscillations resulting from sequential resonance tunneling in a doped weakly-coupled GaAs/AlAs superlattice (SL) is investigated under hydrostatic pressure. From atmosphere pressure to 6.5 kbar, oscillations exist in the whole plateau of the I-V curve and oscillating characteristics are affected by the pressure. When hydrostatic pressure is higher than 6.5 kbar, the current oscillations are completely suppressed although a current plateau still can be seen in the I-V curve. The plateau disappears when the pressure is close to 13.5 kbar. As the main effect of hydrostatic pressure is to lower the X point valley with respect to Gamma point valley, the disappearance of oscillation and the plateau shrinkage before Gamma - X resonance takes place are attributed to the increases of thermoionic emission and nonresonant tunneling components determined by the lowest Gamma - X barrier height in GaAs/AlAs SL structure.

Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

In a search for the mechanism of the induced reduction reaction that occurred in X-ray photoelectron Spectroscopy (XPS) depth profiles measured experimentally on CeO2/Si epilayers grown by ion beam epitaxy (IBE), several possibilities have been checked. The first possibility, that the X-ray induces the reaction, has been ruled out by experimentation. Other possible models for the incident-ion induced reaction, one based on short-range interaction (direct collision) and the other based on long-range potential accompanied with the incident-ions, have been tested by simulation on computer. The results proved that the main mechanism is the former, not the latter. (C) 1998 Elsevier Science Ltd. All rights reserved.

Characteristics of SOI rib waveguide microring and racetrack resonators

Characteristics of microring/racetrack resonators, in submicron SOI rib waveguides, have been investigated. The effects of waveguide dimensions, coupler design, roughness, and oxide cladding are considered. Moreover, guided mode, loss and dispersion of such waveguides are analyzed.

Recent research results on deep level defects in semi-insulating InP - Application to improve material quality

An apparent defect suppression effect has been observed in InP through an investigation of deep level defects in different semi-insulating (SI) InP materials. Quality improvement of SI-InP based on the defect suppression mechanism is presented.

Terahertz pulse generation with LT-GaAs photoconductive antenna

Low-temperature-grown GaAs (LT-GaAs) of 1-um thickness was grown at 250 degrees C on semi-insulating GaAs (001) substrate using EPI GEN-II solid-source MBE system. The sample was then in situ annealed for 10 min at 600 degrees C under As-rich condition. THz emitters were fabricated on this LTGaAs with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. The spectral bandwidth of 2.75 THz was obtaind with time domain spectroscopy. It is found that THz emission efficiency is increased with decreasing antenna gap. Two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy.

Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films

InN films with electron concentration ranging from n similar to 10(17) to 10(20) cm(-3) grown by metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were investigated by variable-temperature photoluminescence and absorption measurements. The energy positions of absorption edge as well as photoluminescence peak of these InN samples with electron concentration above 10(18) cm(-3) show a distinct S-shape temperature dependence. With a model of potential fluctuations caused by electron-impurity interactions, the behavior can be quantitatively explained in terms of exciton freeze-out in local potential minima at sufficiently low temperatures, followed by thermal redistribution of the localized excitons when the band gap shrinks with increasing temperature. The exciton localization energy sigma (loc) is found to follow the n (5/12) power relation, which testifies to the observed strong localization effects in InN with high electron concentrations.

基于椭圆曲线的零知识证明方法对Kerberos系统的改进

Kerberos是一个成熟的产品,广泛应用于金融、邮电、保险等行业.但仍存在一些隐患,例如:重放攻击、密码猜测、会话中选择明文攻击等等.该文针对Kerberos系统登录时可能遭到密码猜测,即所谓的离线字典攻击(Off line Dictionary Attack)的问题,提出一种基于椭圆曲线的零知识证明方法对系统进行改进,并给出相应的协议.

semantic oriented ontology cohesion metrics for ontology-based systems

Ontologies play a core role to provide shared knowledge models to semantic-driven applications targeted by Semantic Web. Ontology metrics become an important area because they can help ontology engineers to assess ontology and better control project management and development of ontology based systems, and therefore reduce the risk of project failures. In this paper, we propose a set of ontology cohesion metrics which focuses on measuring (possibly inconsistent) ontologies in the context of dynamic and changing Web. They are: Number of Ontology Partitions (NOP), Number of Minimally Inconsistent Subsets (NMIS) and Average Value of Axiom Inconsistencies (AVAI). These ontology metrics are used to measure ontological semantics rather than ontological structure. They are theoretically validated for ensuring their theoretical soundness, and further empirically validated by a standard test set of debugging ontologies. The related algorithms to compute these ontology metrics also are discussed. These metrics proposed in this paper can be used as a very useful complementarity of existing ontology cohesion metrics.

我国科学数据共享管理的发展与现状

科学数据是现代科学可持续发展的重要资源。近数十年来,人类社会所积累的科学数据量已经超过过去五千年的总和。与此同时,数据的采集方式、存储方式、传播方式、使用方式等也变得复杂而多样。因此,科学数据的管理就成为支撑科研活动的重要方面。通过对大量文献资料的分析,总结了科学数据共享管理的理论基础,即科学数据的基本属性、科学数据的价值规律、科学数据的投入产出规律。通过对比分析美国和我国科学数据共享管理的状况,提出了我国在该领域存在的差距和主要问题。

黄土高原地区50年降水时空动态与趋势分析

基于黄土高原及周边地区74个气象站1952-2001年降水量数据,计算各站年降水量线性趋势系数,利用ArcGIS地统计模块普通Kriging插值法生成黄土高原地区1952-2001年年降水量和年降水量线性趋势表面,分析年降水量、年降水量线性趋势表面时空分布特征与10年尺度降水量带动态变化。结果表明,黄土高原地区1952-2001年平均年降水量(426.69±67.85)mm,年降水量和年降水量线性趋势存在显著时空分异;年降水量由西向东线性增加,从南到北二次曲线递减,总体上东南西北方向递减;10年尺度平均年降水量减少趋势明显,递减率-10.019 mm/10 a,期间累计减少1227.33 mm;200,400,600 mm降水线南移,干旱半干旱区面积不显著扩大,湿润半湿润区显著缩小,气候呈干旱化趋势;年降水量线性趋势系数从-4.10 mm/a到4.46 mm/a,平均-0.98 mm/a,降水量呈增加趋势地区面积16.36万km2,呈减少趋势地区面积46.27万km2,分占黄土高原地区总面积26.12%和73.88%。