Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature
Data(s) |
1999
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Resumo |
The behavior of room temperature self-sustained current oscillations resulting from sequential resonance tunneling in a doped weakly-coupled GaAs/AlAs superlattice (SL) is investigated under hydrostatic pressure. From atmosphere pressure to 6.5 kbar, oscillations exist in the whole plateau of the I-V curve and oscillating characteristics are affected by the pressure. When hydrostatic pressure is higher than 6.5 kbar, the current oscillations are completely suppressed although a current plateau still can be seen in the I-V curve. The plateau disappears when the pressure is close to 13.5 kbar. As the main effect of hydrostatic pressure is to lower the X point valley with respect to Gamma point valley, the disappearance of oscillation and the plateau shrinkage before Gamma - X resonance takes place are attributed to the increases of thermoionic emission and nonresonant tunneling components determined by the lowest Gamma - X barrier height in GaAs/AlAs SL structure. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wu JQ; Liu ZX; Jiang DS; Sun BQ .Suppression of self-sustained field domain oscillation in GaAs/AlAs superlattice by hydrostatic pressure at room temperature ,CHINESE PHYSICS LETTERS,1999,16(2):143-145 |
Palavras-Chave | #半导体物理 #GAAS-ALAS HETEROSTRUCTURES #DOUBLE-BARRIER STRUCTURES #SEMICONDUCTOR SUPERLATTICES #TRANSPORT |
Tipo |
期刊论文 |