Recent research results on deep level defects in semi-insulating InP - Application to improve material quality
| Data(s) |
2006
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| Resumo |
An apparent defect suppression effect has been observed in InP through an investigation of deep level defects in different semi-insulating (SI) InP materials. Quality improvement of SI-InP based on the defect suppression mechanism is presented. An apparent defect suppression effect has been observed in InP through an investigation of deep level defects in different semi-insulating (SI) InP materials. Quality improvement of SI-InP based on the defect suppression mechanism is presented. zhangdi于2010-03-29批量导入 Made available in DSpace on 2010-03-29T06:06:06Z (GMT). No. of bitstreams: 1 2243.pdf: 385067 bytes, checksum: df5639e83adc82b318366c846ace1ce3 (MD5) Previous issue date: 2006 IEEE. Princeton Univ Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China IEEE. Princeton Univ |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
| Fonte |
Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian) .Recent research results on deep level defects in semi-insulating InP - Application to improve material quality .见：IEEE .2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings,345 E 47TH ST, NEW YORK, NY 10017 USA ,2006,139-143 |
| Palavras-Chave | #半导体材料 #STIMULATED CURRENT SPECTROSCOPY #CURRENT TRANSIENT SPECTROSCOPY #FE-DOPED INP #POINT-DEFECTS #COMPENSATION #TEMPERATURE #DONORS #TRAPS |
| Tipo |
会议论文 |
