OLED中空穴传输层NPB薄膜的结晶化行为研究

近年来，虽然有机电致发光材料和有机电致发光器件得到了广泛的研究，然而贯穿整个有机电致发光研究主线的稳定性问题仍是一个重要的议题。作为发光器件的主要组成部分，有机小分子薄膜的性能不仅由组成分子结构决定，而且还受到自身形态结构的制约。要解决有机材料的热稳定性问题，材料薄膜的形态结构是一个重要的影响因素。弄清有机小分子薄膜的形态结构和性能间的相互关系对于进一步提高器件性能（效率和寿命）是十分必要的。有机分子的热不稳定性表现在形态结构上主要是由非晶态到结晶态的转变，从而引起器件性能的不稳定。所以本文详细研究了一种典型的半晶性有机分子薄膜（同时也是最经常使用的有机小分子空穴传输材料之一）-NPB薄膜的结晶化相转变，分别从均相成核结晶化相转变和异相成核结晶化相转变两个角度来阐述。本文通过AFM、PLM、X射线衍射、DSC等实验方法和研究手段表征了NPB薄膜由非晶态到结晶态的相态转化，并从热力学上进行了分析。同时结合了实际OLED器件中的应用。本论文研究表明NPB分子是一种典型的半晶性小分子，非晶与结晶两种状态的并存导致热力学上的不稳定。本论文详细研究了NPB薄膜的均相成核结晶化相转变和异相成核结晶化相转变，并指出半晶性的NPB分子薄膜的均相成核结晶化存在一个临界结晶厚度，当薄膜厚度超过临界结晶厚度时才能发生结晶。并且临界结晶厚度的大小与基底温度有关。而NPB薄膜的异相成核结晶化转变则由于异核的引入结晶能的降低相对来说容易许多。本论文首次从理论角度归纳提出了均相成核结晶老化机制和异相成核结晶老化机制两种关系到OLED器件稳定性（老化问题）的机制。是为数不多的从薄膜形态角度来研究器件稳定性的一篇文章，对从材料化学角度深入理解OLED器件稳定性有着重要的意义。

Competitions of magnetism and superconductivity in FeAs-based materials

Using the numerical unrestricted Hartree-Fock approach, we study the ground state of a two-orbital model describing newly discovered FeAs-based superconductors. We observe the competition of a (0, π) mode spin-density wave and the superconductivity as the doping concentration changes. There might be a small region in the electron-doping side where the magnetism and superconductivity coexist. The superconducting pairing is found to be spin singlet,orbital even, and coexisting sxy + dx~2-y~2 wave (even parity).

Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method

于2010-11-23批量导入

Research and Development of Electronic and Optoelectronic Materials in China

于2010-11-23批量导入

MOCVD growth of cubic GaN: Materials and devices

Many impressive progresses have been made recently on the growth of cubic-phase GaN by MBE and MOCVD. In this paper, some of our recent progress will be reviewed, including the growth of high quality cubic InGaN films, InGaN/GaN heterostructure blue and green LEDs. Cubic-phase GaN films were grown on GaAs (100) substrates by MOCVD. Growth conditions were optimized to obtain pure cubic phase GaN films up to a thickness of 4 mum. An anomalous compressive strain was found in the as-grown GaN films in spite of a smaller lattice constant for GaN compared with that of GaAs substrates. The photoluminescence FWHM of high quality InGaN epilayers was less than 100 meV The InGaN/GaN heterostructure blue LED has intense electroluminescence with a FWHM of 20 nm.

Nano-layer structure of silicon-on-insulator materials

Silicon-on-insulator (SOI) has been recognized as a promising semiconductor starting material for ICs where high speed and low power consumption are desirable, in addition to its unique applications in radiation-hardened circuits. In the present paper, three novel SOI nano-layer structures have been demonstrated. ULTRA-THIN SOI has been fabricated by separation by implantation of oxygen (SIMOX) technique at low oxygen ion energy of 45 keV and implantation dosage of 1.81017/cm2. The formed SOI layer is uniform with thickness of only 60 nm. This layer is of crystalline quality. and the interface between this layer and the buried oxide layer is very sharp, PATTERNED SOI nanostructure is illustrated by source and drain on insulator (DSOI) MOSFETs. The DSOI structure has been formed by selective oxygen ion implantation in SIMOX process. With the patterned SOI technology, the floating-body effect and self-heating effect, which occur in the conventional SOI devices, are significantly suppressed. In order to improve the total-dose irradiation hardness of SOI devices, SILICON ON INSULATING MULTILAYERS (SOIM) nano-structure is proposed. The buried insulating multilayers, which are composed of SiOx and SiNy layers, have been realized by implantation of nitride and oxygen ions into silicon in turn at different ion energies, followed by two steps of high temperature annealing process, respectively, Electric property investigation shows that the hardness to the total-dose irradiation of SOIM is remarkably superior to those of the conventional SIMOX SOI and the Bond-and-Etch-Back SOI.

Exploration on enhancing innovation capability of functional information materials in China

The present status and future prospects of functional information materials, mainly focusing on semiconductor microstructural materials, are introduced first in this paper. Then a brief discussion how to enhance the academic level and innovation capability of research and development of functional information materials in China are made. Finally the main problems concerning the studies of materials science and technology are analyzed, and possible measures for promoting its development are proposed.