Stochastic resonance for modulated gain in a single-mode laser

Stochastic resonance (SR) induced by the signal modulation is investigated, by introducing the signal-modulated gain into a single-mode laser system. Using the linear approximation method, we detailedly calculate the signal-to-noise ratio (SNR) of a gain-noise model of the single-mode laser, taking the cross-correlation between the quantum noise and pump noise into account. We find that, SR appears in the dependence of the SNR on the intensities of the quantum and the pump noises when the correlation coefficient between both the noises is negative; moreover, when the cross-correlation between the two noises is strongly negative, SR exhibits a resonance and a suppression versus the gain coefficient, meanwhile, the single-peaked SR and multi-peaked SR occur in the behaviors of the SNR as functions of the loss coefficient and the deterministic steady-state intensity. (c) 2005 Elsevier B.V. All rights reserved.

1ps passively mode-locked laser operation of Na, Yb : CaF2 crystal

Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.

Photoluminescence degradation in GaN induced by light enhanced surface oxidation

The exponential degradation of the photoluminescence (PL) intensity at the near-band-gap was observed in heavily doped or low-quality GaN with pristine surface under continuous helium-cadmium laser excitation. In doped GaN samples, the degradation speed increased with doping concentration. The oxidation of the surface with laser irradiation was confirmed by x-ray photoemission spectroscopy measurements. The oxidation process introduced many oxygen impurities and made an increase of the surface energy band bending implied by the shift of Ga 3d binding energy. The reason for PL degradation may lie in that these defect states act as nonradiative centers and/or the increase of the surface barrier height reduces the probability of radiative recombination.

Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure

When injected electrons in a quantum well first experience an intersubband relaxation process before their escaping by tunneling through a double-barrier structure behind, the magnetic suppression of intersubband LO or LA phonon scattering can give rise to a noticeable nonthermal occupation in higher-lying subbands. That is clearly verified by the relative intensity ratio of the interband photoluminescence spectra for E-2-HH1 and E-1-HH1 transitions. The observed phenomenon may provide an effective method for controlling intersubband scattering rate, a central issue in so-called quantum cascade lasers, and facilitating the population inversion between subbands in quantum wells.

High-power and long-lifetime InAs/GaAs quantum-dot laser at 1080 nm

High power and long lifetime have been demonstrated for a semiconductor quantum-dot (QD) laser with five-stacked InAs/GaAs QDs separated by an InGaAs strain-reducing layer (SRL) and a GaAs spacer layer as an active medium. The QD lasers exhibit a peak power of 3.6 W at 1080 nm, a quantum slope efficiency of 84.6%, and an output-power degradation rate of 5.6%/1000 h with continuous-wave constant-current operation at room temperature. A comparative reliability investigation indicates that the lifetime of the InAs/GaAs QD laser with the InGaAs SRL is much longer than that of a QD laser without the InGaAs SRL. This improved lifetime of the QD laser could be explained by the reduction of strain in and around InAs QDs induced by the InGaAs SRL. (C) 2001 American Institute of Physics.

Thermal induced facet destructive feature of quantum cascade lasers

We present a study on the facet damage profile of quantum cascade lasers (QCLs). Conspicuous cascade half-loop damage strips on front facet are observed when QCLs catastrophically failed. Due to the large difference on thermal conductivities between active region and the substrate, dominant heat is compulsively driven to the substrate. Abundant heat accumulation and dissipation on substrate build large temperature gradient and thermal lattice mismatch. Thermal-induced stress due to sequential mismatch leads to the occurrence of the multistep damages on front facet. Good agreement is achieved between the observed locations of damaged strips and the calculated results.

Tunable parametric fluorescence using a single crystal

In this paper, we investigate the mechanism of tunable parametric superfluorescence (PS) based on the second harmonic generation and parametric processes taking place in the same nonlinear crystal (BBO). The tunable spectra of PS has been generated between 480 nm and 530 nm, which is pumped by the second-harmonic from the high-power Ti: sapphire laser system at 1 kHz repetition rate. We present the generation mechanism of PS theoretically and simulate the process of PS ring using the amplification transfer function. The experiment and the theory show that PS will appear when the phase matching angle for second-harmonic generation is close to the optimal pump angle for optical parametric generation, and then the tunable spectra of PS are generated by slightly adjusting the crystal angle. The result provides a theoretical basis for controlling the generation of PS and quantum entanglement states, which is of great significance for the development of quantum imaging, quantum communications and other applieations.

Research on the ultrafast fluorescence property of thylakoid membranes of the wild-type and mutant rice

A high yielding rice variety mutant (Oryza sativa L., Zhenhui 249) with low chlorophyll b (Chl b) has been discovered in natural fields. It has a quality character controlled by a pair of recessive genes (nuclear gene). The partial loss of Chl b in content affects the efficiency of light harvest in a light harvest complex (LHC), thus producing the difference of the exciting energy transfer and the efficiency of photochemistry conversion between the mutant and wild-type rice in photosynthetic unit. The efficiency of utilizing light energy is higher in the mutant than that in the wildtype rice relatively. For further discussion of the above-mentioned difference and learning about the mechanism of the increase in the photochemical efficiency of the mutant, the pico-second resolution fluorescence spectrum measurement with delay-frame-scanning single photon counting technique is adopted. Thylakoid membranes of the mutant and the wild-type rice are excited by an Ar+ laser with a pulse width of 120 ps, repetition rate of 4 MHz and wavelength of 514 nm. Compared with the time and spectrum property of exciting fluorescence, conclusions of those ultrafast dynamic experiments are: 1) The speeds of the exciting energy transferred in photo-system I are faster than that in photo-system II in both samples. 2) The speeds of the exciting energy transfer of mutant sample are faster than those of the wildtype. This might be one of the major reasons why the efficiency of photosynthesis is higher in mutant than that in the wild-type rice.

Effects of shock waves on spatial distribution of proton beams in ultrashort laser-foil interactions

The characteristics of proton beam generated in the interaction of an ultrashort laser pulse with a large prepulse with solid foils are experimentally investigated. It is found that the proton beam emitted from the rear surface is not well collimated, and a "ring-like" structure with some "burst-like" angular modulation is presented in the spatial distribution. The divergence of the proton beam reduces significantly when the laser intensity is decreased. The "burst-like" modulation gradually fades out for the thicker target. It is believed that the large divergence angle and the modulated ring structure are caused by the shock wave induced by the large laser prepulse. A one-dimensional hydrodynamic code, MED103, is used to simulate the behavior of the shock wave produced by the prepulse. The simulation indicates that the rear surface of the foil target is significantly modified by the shock wave, consequently resulting in the experimental observations. (c) 2006 American Institute of Physics.

Color center conversion by femtosecond pulse laser irradiation in LiF : F-2 crystals

We report the observation of intense spontaneous emission of green light from LiF:F-2:F-3(+) centers in active channel waveguides generated in lithium fluoride crystals by near-infrared femtosecond laser radiation. While irradiating the crystal at room temperature with 405 nm light from a laser diode, yellow and green emission was seen by the naked eye. Stripe waveguides were fabricated by translating the crystal along the irradiated laser pulse, and their guiding properties and fluorescence spectra at 540 nm demonstrated. This single-step process inducing a waveguide structure offers a good prospect for the development of a waveguide laser in bulk LiF crystals.

Reduce of threshold of laser inducing breakdown in atmosphere by introducing an electric spark

We report laser-generated plasmas in atmosphere with electrical spark generated by a synchronization circuit. The breakdown thresholds under the conditions that the electrical spark is used and not used are compared. The breakdown threshold has a distinct decrease after the electrical spark is used. Breakdown thresholds as a function of atmosphere pressure have also been measured at laser wavelengths 532 nm and 1064 rim for the laser pulse width of 15ns. We also discuss the principle and performances of the ionized atmosphere by Nd:YAG laser under the condition of electrical spark introduction. Multiphoton ionization and cascade ionization play important roles in the whole process of atmosphere ionization. The free electron induced by electrical spark can supply the initialization free electron number for multiphoton ionization and cascade ionization. A model for breakdown in atmosphere, which is in good agreement with the experimental results, is described.

Near-Infrared Femtosecond Laser for Studying the Strain in Si1-xGex Alloy Films via Second-Harmonic Generation

The second-harmonic generation (SHG) from Si1-xGex alloy films has been investigated by near-infrared femtosecond laser. Recognized by s-out polarized SHG intensity versus rotational angle of sample, the crystal symmetry of the fully strained Si0.83Ge0.17 alloy is found changed from the O-h to the C-2 point group due to the inhomogeneity of the strain. Calibrated by double crystal X-ray diffraction, the strain-induced chi((2)) is estimated at 5.7 x 10(-7) esu. According to the analysis on p-in/s-out SHG, the strain-relaxed Si0.10Ge0.90 alloy film is confirmed to be not fully relaxed, and the remaining strain is quantitatively determined to be around 0.1%.

Mechanisms of optical confinement in phase-locked laser arrays

The nature of optical confinement in phase-locked laser arrays (PLLAs) with a mesa-stripe structure (MSS) has been studied. Two main mechanisms are distinguished, which are based on the variation of the waveguide effective refractive index due to MSS formation and on the refractive index modulation induced by the heating of the structure. Stable operation was achieved when either weak or strong optical coupling was realized in the PLLA. A phase-locked regime of radiation was obtained only for laser diodes with strong optical coupling. In the latter case the angle divergency was not greater than 2 degrees for the antisymmetric supermode emission from the PLLA.

High power AlGaInP laser diodes with zinc-diffused window mirror structure

The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.