Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure


Autoria(s): An L; Tang Y; Zhang JD; Ji Y; Tan PH; Yang FH; Zhaeng HZ
Data(s)

2003

Resumo

When injected electrons in a quantum well first experience an intersubband relaxation process before their escaping by tunneling through a double-barrier structure behind, the magnetic suppression of intersubband LO or LA phonon scattering can give rise to a noticeable nonthermal occupation in higher-lying subbands. That is clearly verified by the relative intensity ratio of the interband photoluminescence spectra for E-2-HH1 and E-1-HH1 transitions. The observed phenomenon may provide an effective method for controlling intersubband scattering rate, a central issue in so-called quantum cascade lasers, and facilitating the population inversion between subbands in quantum wells.

Identificador

http://ir.semi.ac.cn/handle/172111/11516

http://www.irgrid.ac.cn/handle/1471x/64728

Idioma(s)

中文

Fonte

An L; Tang Y; Zhang JD; Ji Y; Tan PH; Yang FH; Zhaeng HZ .Magnetic-field-induced nonthermal occupation of higher subbands in a three-barrier tunneling structure ,SPECTROSCOPY AND SPECTRAL ANALYSIS,2003,23 (3):470-473

Palavras-Chave #半导体物理 #resonance tunneling #nonthermal occupation #intersubband relaxation #QUANTUM-WELLS #SEMICONDUCTOR SUPERLATTICES #POPULATION-INVERSION #ELECTRON #EMISSION #LASER
Tipo

期刊论文