993 resultados para Fatigue Damage


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The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

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The damage removal and strain relaxation in the As+-implanted Si0.57Ge0.43 epilayers were studied by double-crystal x-ray diffractometry and transmission electron microscopy. The results presented in this paper indicate that rapid thermal annealing at temperatures higher than 950 degrees C results in complete removal of irradiation damage accompained by the formation of GeAs precipitates which enhance the removal process of dislocations.

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Neutron-irradiated high-resistivity silicon detectors have been subjected to elevated temperature annealing (ETA). It has been found that both detector full depletion voltage and leakage current exhibit abnormal annealing (or ''reverse annealing'') behaviour for highly irradiated detectors: increase with ETA. Laser induced current measurements indicate a net increase of acceptor type space charges associated with the full depletion voltage increase after ETA. Current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) data show that the dominant effect is the increase of a level at 0.39 eV below the conduction band (E(c) - 0.39 eV) or a level above the valence band (E(v) + 0.39 eV). Candidates tentatively identified for this level are the singly charged double vacancy (V-V-) level at E(c) - 0.39 eV, the carbon interstitial-oxygen interstitial (C-i-O-i) level at E(v) + 0.36 eV, and/or the tri-vacancy-oxygen center (V3O) at E(v) + 0.40 eV.

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The high cycle and Very-High-Cycle Fatigue (VHCF) properties of a structural steel with smooth and notched specimens were studied by employing a rotary bending machine with frequency of 52.5 Hz. For smooth specimens, VHCF failure did occur at fatigue cycles of 7.1 x 10(8) with the related S-N curve of stepwise tendency. Scanning Electron Microscopy (SEM) was used for the observations of the fracture surfaces It shows that for smooth specimens the crack origination is surface mode in the failure regime of less than 10(7) cycles While at VHCF regime, the material failed from the nonmetallic inclusion lies in the interior of material, leading to the formation of fisheye pattern. The dimensions of crack initiation region were measured and discussed with respect to the number of cycles to failure. The mechanism analysis by means of low temperature fracture technique shows that the nonmetallic inclusion in the interior of specimen tends to debond from surrounding matrix and form a crack. The crack propagates and results to the final failure. The stress intensity factor and fatigue strength were calculated to investigate the crack initiation properties. VHCF study on the notched specimens shows that the obtained S-N curve decreases continuously. SEM analysis reveals that multiple crack origins are dominant on specimen surface and that fatigue crack tends to initiate from the surface of the specimen. Based on the fatigue tests and observations, a model of crack initiation was used to describe the transition of fatigue initiation site from subsurface to surface for smooth and notched specimens. The model reveals the influences of load, grain size, inclusion size and surface notch on the crack initiation transition. (C) 2010 Elsevier Ltd. All rights reserved