Phase-locked ring-defect photonic crystal vertical-cavity surface-emitting laser

Phase-locked oxide-confined ring-defect photonic crystal vertical-cavity surface-emitting laser is presented. The coupled-mode theory is employed to illustrate the two supermodes of the device, in-phase and out-of-phase supermode. Experimental results verify the two supermodes by the characteristics of the spectra and the far field patterns. At the lower current, only the out-of-phase supermode is excited, whereas under the higher current, the in-phase supermode also appears at the shorter wavelength range. In addition, the measured spectral separation between the two supermodes agrees well with the theoretical result.

measuring acoustic wave transit time in furnace based on active acoustic source signal

Accurate measurement of transit time for acoustic wave between two sensors installed on two sides of a furnace is a key to implementing the temperature field measurement technique based on acoustical method. A new method for measuring transit time of acoustic wave based on active acoustic source signal is proposed in this paper, which includes the followings: the time when the acoustic source signal arrives at the two sensors is measured first; then, the difference of two arriving time arguments is computed, thereby we get the transit time of the acoustic wave between two sensors installed on the two sides of the furnace. Avoiding the restriction on acoustic source signal and background noise, the new method can get the transit time of acoustic wave with higher precision and stronger ability of resisting noise interference.

Two-dimensional photovoltaic dark spatial solitons of partially spatially incoherent light

We report a successful experimental observation of two-dimensional photovoltaic dark solitons in an anisotropic crystal with partially spatially incoherent light beams. This kind of solitons results from the bulk photovoltaic effect, which depends on the direction of propagation of the optical beam and on the orientation of the intensity gradient, with respect to the principal axes of the crystal.

Two-photon asymmetric color-locking second-order stochastic correlation of attosecond polarization beats

Based on the phase-conjugation polarization interference between two two-photon processes, we theoretically investigated the attosecond scale asymmetry sum-frequency polarization beat in four-level system (FASPB). The field correlation has weak influence on the FASPB signal when the laser has narrow bandwidth. Conversely, when the laser has broadband linewidth, the FASPB signal shows resonance-nonresonance cross correlation. The two-photon signal exhibits hybrid radiation-matter detuning terahertz; damping oscillation, i.e., when the laser frequency is off resonance from the two-photon transition, the signal exhibits damping oscillation and the profile of the two-photon self-correlation signal also exhibits zero time-delay asymmetry of the maxima. We have also investigated the asymmetry of attosecond polarization beat caused by the shift of the two-photon self-correlation zero time-delay phenomenon, in which the maxima of the two two-photon signals are shifted from zero time-delay point to opposite directions. As an attosecond ultrafast modulation process, FASPB can be intrinsically extended to any level-summation systems of two dipolar forbidden excited states.

An automatic step adjustment method for average power analysis technique used in fiber amplifiers

An automatic step adjustment (ASA) method for average power analysis (APA) technique used in fiber amplifiers is proposed in this paper for the first time. In comparison with the traditional APA technique, the proposed method has suggested two unique merits such as a higher order accuracy and an ASA mechanism, so that it can significantly shorten the computing time and improve the solution accuracy. A test example demonstrates that, by comparing to the APA technique, the proposed method increases the computing speed by more than a hundredfold under the same errors. By computing the model equations of erbium-doped fiber amplifiers, the numerical results show that our method can improve the solution accuracy by over two orders of magnitude at the same amplifying section number. The proposed method has the capacity to rapidly and effectively compute the model equations of fiber Raman amplifiers and semiconductor lasers. (c) 2006 Optical Society of America

Structuring by multi-beam interference using symmetric pyramids

A method for producing optical structures using rotationally symmetric pyramids is proposed. Two-dimensional structures can be achieved using acute prisms. They form by multi-beam interference of plane waves that impinge from directions distributed symmetrically around the axis of rotational symmetry. Flat-topped pyramids provide an additional beam along the axis thus generating three-dimensional structures. Experimental results are consistent with the results of numerical simulations. The advantages of the method are simplicity of operation, low cost, ease of integration, good stability, and high transmittance. Possible applications are the fabrication of photonic micro-structures such as photonic crystals or array waveguides as well as multi-beam optical tweezers. (c) 2006 Optical Society of America.

Fast calculation technique for scattering in T-matrix method

In scattering calculations using the T-matrix method, the calculation of the T-matrix involves multiplication and inversion of matrices. These two types of matrix operations are time-consuming, especially for the matrices with large size. Petrov et al. [D. Petrov, Y. Shkuratov, G. Videen, Opt. Lett. 32 (2007) 1168] proposed an optimized matrix inversion technique, which suggests the inversion of two matrices, each of which contains half the number of rows. This technique reduces time-consumption significantly. On the basis of this approach, we propose another fast calculation technique for scattering in the T-matrix method, which obtains the scattered fields through carrying out only the operations between matrices and the incident field coefficient. Numerical results show that this technique can decrease time-consumption by more than half that of the optimized matrix inversion technique by Petrov et al. (c) 2008 Elsevier B.V. All rights reserved.

ESTIMATION OF THE STRAIN STATE OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES BY DOUBLE-CRYSTAL X-RAY-DIFFRACTION

20-period strained-layer superlattices of nominal composition and width Ge0.2Si0.8 (5 nm)/Si(25 nm) and Ge0.5Si0.5 (5 nm)/Si(25 nm) were studied by double-crystal X-ray diffraction. The Ge content x was determined by computer simulation of the diffraction features from the superlattice. This method is shown to be independent of the relaxation of the superlattice. Alternatively, x can be obtained from the measured difference DELTAa/a in lattice spacing perpendicular to the growth plane. It is sensitive to the relaxation. Comparing the results obtained in these two different ways, information about the relaxation of the superlattices can be obtained.

KINEMATICAL STUDY OF GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE BY A DOUBLE CRYSTAL X-RAY-DIFFRACTION METHOD

Two samples of nominal 20-period Ge0.20Si0.80(5 nm)/Si(25 nm) and Ge0.5Si0.5(5 nm)/Si(25 nm) strained-layer superlattices (SLSs) were studied by the double-crystal X-ray diffraction method. It is convenient to define the perpendicular strains relative to the average crystal. Computer simulations of the rocking curves were performed using a kinematical step model. An excellent agreement between the measured and simulated satellite patterns is achieved. The dependence of the sensitivity of the rocking curves to the structural parameters of the SLS, such as the alloying concentration x and the layer thicknesses and the L component of the reflection g = (HKL), are clearly demonstrated.

DELINEATION OF DEFECTS IN SIMOX STRUCTURES USING A CHEMICAL ETCHING TECHNIQUE

Residual defects in the overlayer of fully annealed SIMOX material have been studied by means of a chemical etching technique. The etching procedure has been calibrated and an optimum recipe is reported. Observations using optical microscopy and transmission electron microscopy have been used to quantify the defect densities and good agreement between the two techniques has been established, confirming that the optimised chemical etching process can be used with confidence to determine the dislocation density for values < 10(7) cm-2.

Quantum interference effect in GaAs/AlGaAs double quantum wells

Quantum interference properties of GaAs/AlGaAs symmetric double quantum wells were investigated in a magnetic field parallel to heterointerfaces at 1.9 K. For two types of samples used in our experiments, two GaAs quantum wells with the same width of 60 Angstrom are separated by an AlGaAs barrier layer of 120 Angstrom and 20 degrees thick, respectively. The channels with the length of 2 mu m are defined by alloyed ohmic contacts. The conductance oscillation as a function of the magnetic flux Phi(= B/s) was observed and oscillation period is approximately equal to h/e. The results are in agreement with the theoretical expectation of the Aharonov-Bohm effect. Conductance oscillations are apparent slightly in the samples with a thinner AlGaAs barrier.

INVESTIGATION OF C-60 SINGLE-CRYSTAL BY X-RAY-METHODS

C-60 Single crystals grown by a single-temperature-gradient technique were characterized by synchrotron radiation white beam x-ray topography and x-ray double crystal diffraction with Cu K-alpha 1 radiation on conventional x-ray source. The results show that the crystal is rather well crystallized, The x-ray topographies give an evidence of dendritic growth mechanism of C-60 Single crystal, and x-ray double crystal diffraction rocking curve shows that there are mosaic structural defects in the sample. A phase transition st 249+/-1.5% K from a simple cubic to a face centered cubic structure is confirmed by in situ observation of synchrotron radiation white beam x-ray topography with the temperature varing from 230 to 295 K.

ALKALINE POLISHING OF INP USING DOUBLE-POURING TECHNIQUE

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A STUDY OF THE COMPOSITION DISTRIBUTION AT THE TI/AL2O3 INTERFACE USING THE MCS(+)-SIMS TECHNIQUE

In this article, the MCs(+)-SIMS technique has been used to characterize Ti/Al2O3 metal/insulator interfaces. Our experiment shows that by detecting MCs(+) secondary ions, the matrix and interface effects are reduced, and good depth profiles have been obtained. The experimental result also shows that with the increase of the annealing temperature (RT, 300 degrees C, 600 degrees C, 850 degrees C), the interface gets broadened gradually, indicating diffusion and reaction take place at the interface, and the interface reaction is enhanced with the increase in annealing temperature. When the temperature increases, the AlCs+ signal forms two plateaus in the Ti layer, indicating Al from the decomposition of Al2O3 diffuses into the Ti layer and exists as two new forms (phases). Also, with the increase of the annealing temperature, oxygen diffuses into the Ti layer gradually, and makes the O signal in the Ti layer increase significantly in the 850 degrees C annealed sample.

Fabrication of Silicon Crystal-Facet-Dependent Nanostructures by Electron-Beam Lithography

Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a (100)-oriented silicon-on-insulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes ad-vantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The mini-mum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy(SEM) and atomic force microscopy (AFM) observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.