Third-order optical nonlinearities of lead-free (Na1-xKx)(0.5)Bi0.5TiO3 thin films

(Na1-xKx)(0.5)Bi0.5TiO3 (NKBT) (x = 0.1, 0.2, and 0.3) thin films with good surface morphology and rhombohedral perovskite structure were fabricated on quartz substrates by a sol-gel process. The fundamental optical constants (the band gaps, linear refractive indices and absorption coefficients) of the films were obtained through optical transmittance measurements. The nonlinear optical properties were investigated by Z-scan technique performed at 532 nm with a picosecond laser. A two-photon absorption effect closely related with potassium-doping content was found in thin films, and the nonlinear refractive index n(2) increases evidently with potassium-doping. The real part of the third-order nonlinear susceptibility chi((3)) is much larger than its imaginary part, indicating that the third-order optical nonlinear response of the NKBT films is dominated by the optical nonlinear refractive behavior. These results show that NKBT thin films have potential applications in nonlinear optics. (C) 2007 Elsevier B.V. All rights reserved.

Optical response of high-order band gap photonic crystal applying in-plane in one-dimensional integration

A new broadband filter, based on the high-order band gap in one-dimensional photonic crystal (PCs) of the form Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si vertical bar air vertical bar Si, has been designed by the plane wave expansion method (PWEM) and transfer matrix method (TMM) and fabricated by lithography. The optical response of this filter to normal-incident and oblique-incident light proves that utilizing the high-order band gaps of PCs is an efficient method to lower the difficulties of fabricating PCs, increase the etching depth of semiconductor materials, and reduce the coupling loss at the interface between optical fibers and PC device. (c) 2007 Elsevier B.V. All rights reserved.

Energy band alignment of SiO2/ZnO interface determined by x-ray photoelectron spectroscopy

Thin SiO2 interlayer is the key to improving the electroluminescence characteristics of light emitting diodes based on ZnO heterojunctions, but little is known of the band offsets of SiO2/ZnO. In this letter, energy band alignment of SiO2/ZnO interface was determined by x-ray photoelectron spectroscopy. The valence band offset Delta E-V of SiO2/ZnO interface is determined to be 0.93 +/- 0.15 eV. According to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V Delta E-C=E-g(SiO2)-E-g(ZnO)-Delta E-V, and taking the room-temperature band-gaps of 9.0 and 3.37 eV for SiO2 and ZnO, respectively, a type-I band-energy alignment of SiO2/ZnO interface with a conduction band offset of 4.70 +/- 0.15 eV is found. The accurate determination of energy band alignment of SiO2/ZnO is helpful for designing of SiO2/ZnO hybrid devices and is also important for understanding their carrier transport properties. (C) 2009 American Institute of Physics. [DOI 10.1063/1.3204028]

Characterization of silicon carbide thin films and their use in colour sensor

A series of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films were prepared by plasma-enhanced chemical vapour deposition (PECVD) using a gas mixture of silane, methane, and hydrogen as the reactive source. The previous results show that a high excitation frequency, together with a high hydrogen dilution ratio of the reactive gases, allow an easier incorporation of the carbon atoms into the silicon-rich a-Si1-xCx:H film, widen the valence controllability. The data show that films with optical gaps ranging from about 1.9 to 3.6 eV could be produced. In this work the influence of the hydrogen dilution ratio of the reactive gases on the a-Si1-xCx:H film properties was investigated. The microstuctural and photoelectronic properties of the silicon carbide films were characterized by Rutherford backscattering spectrometry (RBS), elastic recoil detection analysis (ERDA), and FT-IR spectrometry. The results show that a higher hydrogen dilution ratio enhances the incorporation of silicon atoms in the amorphous carbon matrix for carbon-rich a-Si1-xCx:H films. One pin structure was prepared by using the a-Si1-xCx:H film as the intrinsic layer. The light spectral response shows that this structure fits the requirement for the top junction of colour sensor. (c) 2004 Elsevier B.V. All rights reserved.

Effect of incorporating nonlanthanoidal indium on optical properties of ferroelectric Bi4Ti3O12 thin films

Bi4Ti3O12 (BTO) and Bi3.25In0.75Ti3O12 (BTO:In) thin films were prepared on fused quartz and LaNiO3/Si (LNO) substrates by chemical solution deposition (CSD). Their microstructures, ferroelectric and optical properties were investigated by X-ray diffraction, scanning electron microscope, ferroelectric tester and UV-visible-NIR spectrophotometer, respectively. The optical band-gaps of the films were found to be 3.64 and 3.45 eV for the BTO and BTO:In films, respectively. Optical constants (refractive indexes and extinction coefficients) were determined from the optical transmittance spectra using the envelope method. Following the single electronic oscillator model, the single oscillator energy E-0, the dispersion energy E-d, the average interband oscillator wavelength lambda(0), the average oscillator strength S-0, the refractive index dispersion parameter (E-0/S-0), the chemical bonding quantity beta, and the long wavelength refractive index n(infinity) were obtained and analyzed. Both the refractive index and extinction coefficient of the BTO:In films are smaller than those of the BTO films. Furthermore, the refractive index dispersion parameter (E-0/S-0) increases and the chemical bonding quantity beta decreases in the BTO and BTO:In films compared with those of bulk. (C) 2007 Published by Elsevier B.V.

Spin states and persistent currents in mesoscopic rings: Spin-orbit interactions

We investigate theoretically electron spin states in one-dimensional and two-dimensional (2D) hard-wall mesoscopic rings in the presence of both the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI) in a perpendicular magnetic field. The Hamiltonian of the RSOI alone is mathematically equivalent to that of the DSOI alone using an SU(2) spin rotation transformation. Our theoretical results show that the interplay between the RSOI and DSOI results in an effective periodic potential, which consequently leads to gaps in the energy spectrum. This periodic potential also weakens and smoothens the oscillations of the persistent charge current and spin current and results in the localization of electrons. For a 2D ring with a finite width, higher radial modes destroy the periodic oscillations of persistent currents.

Electronic states in InAs quantum spheres and ellipsoids

The eight-band effective-mass Hamiltonian of the free-standing narrow-gap InAs quantum ellipsoids is developed, and the electron and hole electronic structures as well as optical properties are calculated by using the model. The energies, wave functions and transition probabilities of quantum spheres as functions of the radius of quantum sphere R is presented. It is found that the energy levels do not vary as 1/R-2, which is caused by the coupling between the conduction and valence bands, and by the constant terms correspond to the spin-orbit splitting energy. The blueshifts of hole states depend strongly on the coupling from electron states, so that the order of hole states changes as has been predicted in experiment. The exciton binding energies are calculated, the calculated excitonic gaps as functions of the ground exciton transition energy are in good agreement with the photoluminescence measured spectra in details. Finally, the hole energy levels and the linear polarization factors in InAs quantum ellipsoids as functions of the aspect ratio are presented. The state 1S(Z up arrow)((1/2)) becomes the hole ground state when e is larger than 2.4. The saturation value of the linear polarization factors of the InAs long ellipsoids of diameter 2.0 nm is 0.86, in agreement with the experimental results.

Spin-polarized transport in one-dimensional waveguide structures with spatially periodic electric fields

We investigate theoretically spin-polarized transport in a one-dimensional waveguide structure under spatially periodic electric fields. Strong spin-polarized current can be obtained by tuning the external electric fields. It is interesting to find that the spin-dependent transmissions exhibit gaps at various electron momenta and/or gate lengths, and the gap width increases with increasing the strength of the Rashba effect. The strong spin-polarized current arises from the different transmission gaps of the spin-up and spin-down electrons. (c) 2006 American Institute of Physics.

Photoluminescence from ZnS1-xTex alloys under hydrostatic pressure

ZnS1-xTex (0.02less than or equal toxless than or equal to0.3) alloys are studied by photoluminescence under hydrostatic pressure at room temperature. Only a wide emission band is observed for each sample. Its peak energy is much lower than the corresponding band gap of alloys. These bands are ascribed to the radiative annihilation of excitons bound at Te-n(ngreater than or equal to2) isoelectronic centers. The pressure coefficients of the emission bands are smaller than those of alloy band gaps from 48% to 7%. The difference of the pressure coefficient of the emission band and the band gap increases when the binding energy of Te-n centers decreases. It seems contrary to our expectation and needs further analysis. The integrated intensities of emission bands decrease with increasing pressure due to the decreasing of the absorption coefficient associated with the Te-n centers under pressure. According to this model the Stokes shifts between the emission and absorption bands of the Te-n centers are calculated, which decrease with the increasing Te composition in alloys.

Terahertz pulse generation with LT-GaAs photoconductive antenna

Low-temperature-grown GaAs (LT-GaAs) of 1-um thickness was grown at 250 degrees C on semi-insulating GaAs (001) substrate using EPI GEN-II solid-source MBE system. The sample was then in situ annealed for 10 min at 600 degrees C under As-rich condition. THz emitters were fabricated on this LTGaAs with three different photoconductive dipole antenna gaps of 1-mm, 3-mm, and 5-mm, respectively. The spectral bandwidth of 2.75 THz was obtaind with time domain spectroscopy. It is found that THz emission efficiency is increased with decreasing antenna gap. Two carrier lifetimes, 0.469 ps and 3.759 ps, were obtained with time-resolved transient reflection-type pump-probe spectroscopy.

Two-dimensional photonic crystals with a large photonic band gap designed by a rapid genetic algorithm

We used Plane Wave Expansion Method and a Rapid Genetic Algorithm to design two-dimensional photonic crystals with a large absolute band gap. A filling fraction controlling operator and Fourier transform data storage mechanism had been integrated into the genetic operators to get desired photonic crystals effectively and efficiently. Starting from randomly generated photonic crystals, the proposed RGA evolved toward the best objectives and yielded a square lattice photonic crystal with the band gap (defined as the gap to mid-gap ratio) as large as 13.25%. Furthermore, the evolutionary objective was modified and resulted in a satisfactory PC for better application to slab system.

Measurement of GaN/Ge(001) Heterojunction Valence Band Offset by X-Ray Photoelectron Spectroscopy

X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) at the GaN/Ge heterostructure interface. The VBO is directly determined to be 1.13 +/- 0.19 eV, according to the relationship between the conduction band offset Delta E-C and the valence band offset Delta E-V : Delta E-C = E-g(GaN) - E-g(Ge) - Delta E-V, and taking the room-temperature band-gaps as 3.4 and 0.67 eV for GaN and Ge, respectively. The conduction band offset is deduced to be 1.6 +/- 0.19 eV, which indicates a type-I band alignment for GaN/Ge. Accurate determination of the valence and conduction band offsets is important for the use of GaN/Ge based devices.

黄土丘陵区油松天然次生林林窗特征与更新动态

研究了黄土丘陵区油松天然次生林林窗的形状、大小结构、分布、形成木特征及其更新状况.结果表明:在油松天然次生林中,林冠林窗(CG)和扩展林窗(EG)面积均呈以小林窗为主的偏态分布.CG平均面积为31.15 m2,以20~40 m2林窗的数量比和面积比最大,分别为38.24%和30.50%;EG平均面积为58.04 m2,以30~60 m2的数量比和面积比最大,分别为36.77%和27.79%,且CG的平均面积占EG平均面积的53.67%;林窗形状多呈椭圆形,高度多在14~16 m;林窗形成年龄以10~20年为主,占33.82%.林窗中基折和枯立木分别占形成木总数的47.66%和23.44%.林窗形成的主要因素是人为间伐或盗伐,树木衰老等引起的抗性下降、干旱、病虫害等也是导致树木死亡的原因之一;每个林窗中平均有1.89个形成木,其中以2株形成木的林窗最多.林窗形成木主要是油松,其次为山杨、白桦和辽东栎等.形成木的径级呈明显的偏态分布,以10~20 cm和21~30 cm径级最为普遍,分别占总数的25.0%和45.31%,与林窗面积偏态分布吻合;林窗内林木的更新状况好于林下,且油松幼苗不存在断层,而油松林下幼苗在年...

新型选择性磁共振成像造影剂的设计、合成及性质

近年来，随着磁共振血管造影（magnetic resonance angiography，MRA）、功能磁共振成像（fuectional MRI）、灌注磁共振成像中erfusion MRI）、扩散加权磁共振成像（diffusion weigllted MRI）等新M班技术的发展和在临床诊断应用中的普及，磁共振成像造影剂的研究和开发已经成为一个日益重要的研究领域。其中大分子造影剂由于具有弛豫效率高、在血池中停留时间长及可能的组织、器官选择性等特点更是受到MRI造影剂研究者的广泛关注。论文工作围绕新型MRI造影剂的研制进行了较系统的研究，主要实验结果归纳如下：（1）以天然多糖为载体的M斑造影剂设计合成了四种天然多糖修饰的Gd-DTPA配合物：AG-（Gd-DTPA）n、PQPS-（Gd-DTPA）n、GAPS-（Gd-DTPA）n和EAPS-（Gd-DTPA）。通过体外弛豫时间测试和体内磁共振成像实验研究其弛豫性能、器官选择性、体内滞留时间和代谢情况，结合体外稳定性和溶血性综合评价了其应用于临床的可能性。研究结果表明，不同类型多糖Gd-DTPA配合物在水溶液中弛豫性能相近，为Gd-DTPA的1.5-2.0倍，对肝脏信号的增强效果是Gd-DTPA的3.0倍左右，并且能在较长时间内产生稳定良好的增强效果。肝脏信号的增强效果随多糖Gd-DTPA配合物分子量的增加基本呈现出升高趋势，表明分子量影响其肝脏分布，分子量越大越易于在肝脏积累。其中，AG-（GdDTPA）n表现出了良好的肝脏选择性和肾脏代谢性能，有望成为有前景的肝脏选择性造影剂。而EAPS-（Gd-DTPA）n在肾脏中的代谢速率较慢，这一特性在磁共振血管造影及灌注磁共振成像的研究中极有帮助。（2）稀土杂多配合物M班造影剂设计合成了三种夹心型稀土杂多配合物：K13［Gd（Siw11O39）］、K11H6［Gd3O3（SiWgO34）2］及K17［Gd（PZW17O61）2］，通过体外弛豫性能、稳定性、溶血性及体内急性毒性、磁共振成像实验，对其体外体内的增强效果和安全性进行了较全面的评价。K13［Gd（SIWllO39）2］和K17〔Gd（PZwl7o61）2］在水溶液中的弛豫效率略高于Gd-DTPA，而K11H6［Gd3O3（SiW9O34）2］在水溶液中的弛豫效率是Gd-DTPA的3.5倍左右。磁共振成像实验表明：K13［Gd（SIWll。动2］、K11H6［Gd3O3（siwgo34）2」和K17［Gd（P ZwI7o61）2］对肝脏产生的增强效果分别为Gd-DTPA的1.5、2.5和3.5倍左右，对肾脏的增强效果不及Gd-DTPA。通过与磷钨杂多配合物的比较发现，具有相同构型的稀土杂多配合物对肝脏和肾脏产生的增强效果相近，肝脏信号增强的顺序为Gd（凡wl7）2＞Gd3（XW9）2＞Gd（XW11）2，肾脏信号增强的顺序为Gd3（XW9）2≈Gd（XW11）2＞Gd（X2W17）2。总体来说，稀土杂多配合物在体内的分布和代谢是由其构型、离子大小、所带负电荷等因素决定的，受结构中的杂原子影响不大。

丁苯嵌段共聚物(SBS,SB-4A)与均聚物PPO,PBD共混体系相容性的研究

本工作对不同分子构成的丁苯嵌段共聚物SBS（SB三嵌段共聚物）和SB－4A（SB四臂星型嵌段共聚物）分别与均聚物PPO，以及分别与不同分子量的均聚物PBD的共混体系进行了研究，探讨了嵌段共聚物分子构造，均聚物分子量和共混组成对共混体系的相容性和形态结构的影响。