985 resultados para J.P. Morgan
Resumo:
The self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) has been investigated using a self-consistent theoretical model. Good agreement is obtained between theoretical analysis and experimental results under pulsed operation. The results show that in p-doped QD VCSELs, the output power is significantly influenced by self-heating. About 60% of output power is limited by self-heating in a device with oxide aperture of 5x6 mu m(2). This value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7x8 and 15x15 mu m(2). The temperature increase in the active region and injection efficiency of the QDs are calculated and discussed based on the different oxide aperture areas and duty cycle.
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n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhibits strong violet emission at 405 nm from ZnO without GaN emission. The EL intensity is greatly enhanced by inserting a thin AlN intermediate layer and it can be attributed to the suppressed formation of the GaOx interfacial layer and confinement effect rendered by the AlN potential barrier layer.
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We continue the study of spiking neural P systems by considering these computing devices as binary string generators: the set of spike trains of halting computations of a given system constitutes the language generated by that system. Although the "direct" generative capacity of spiking neural P systems is rather restricted (some very simple languages cannot be generated in this framework), regular languages are inverse-morphic images of languages of finite spiking neural P systems, and recursively enumerable languages are projections of inverse-morphic images of languages generated by spiking neural P systems.
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NPOSSiESESOC(Expert System for the Elucidation of the Structure of Orsanic Compounds)(IR, MS~1HNMK ~(13)CNMR, 2D-NMR)ESESOC(1)(2)(3)ESESOCDENDRALC_nH_(2n+2)C_nH_(2n+2)0C_5H_n n = 12108642OC_6H_n n = 1412lO8642O(ONS)DENDRAL(DENDRAL)ESESOCESESOCCHEMICS~(13)CNMR~(13)CNMR(1)(2)ESESOC~(13)CNMRESESOC-CIAC-~(13)CNMR~(13)CNMR-~(13)CNMRESESOC ~(13)CNMR~(13)CNMR(1)(2)(3)(1)IDEAIDESESOC1-223801-1220403440IDEAID440()(2)ESESOCMorganESESOC(Topological Symmetry)NMRESESOC
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Ge-on-silicon-on-insulator p-i-n photodetectors were fabricated using an ultralow-temperature Ge buffer by ultrahigh-vacuum chemical vapor deposition. For a detector of 70-mu m diameter, the 1-dB small-signal compression power was about 110.5 mW. The 3-dB bandwidth at 3-V reverse bias was 13.4 GHz.
