Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes
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2010
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| Resumo |
n-ZnO/p-GaN heterojunction light-emitting diodes with and without a sandwiched AlN layer were fabricated. The electroluminescence (EL) spectrum acquired from the n-ZnO/p-GaN displays broad emission at 650 nm originating from ZnO and weak emission at 440 nm from GaN, whereas the n-ZnO/AlN/p-GaN exhibits strong violet emission at 405 nm from ZnO without GaN emission. The EL intensity is greatly enhanced by inserting a thin AlN intermediate layer and it can be attributed to the suppressed formation of the GaOx interfacial layer and confinement effect rendered by the AlN potential barrier layer. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-18T14:22:18Z No. of bitstreams: 1 Improved electroluminescence from n-ZnOAlNp-GaN heterojunction light-emitting diodes.pdf: 285038 bytes, checksum: 56d2a2bd28d28500e32161369b6e6ac4 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-06-18T14:47:20Z (GMT) No. of bitstreams: 1 Improved electroluminescence from n-ZnOAlNp-GaN heterojunction light-emitting diodes.pdf: 285038 bytes, checksum: 56d2a2bd28d28500e32161369b6e6ac4 (MD5) Made available in DSpace on 2010-06-18T14:47:20Z (GMT). No. of bitstreams: 1 Improved electroluminescence from n-ZnOAlNp-GaN heterojunction light-emitting diodes.pdf: 285038 bytes, checksum: 56d2a2bd28d28500e32161369b6e6ac4 (MD5) Previous issue date: 2010 This work was financially supported by the "863" project of China (2009AA03Z305), the National Natural Science Foundation of China (60876031 and 60806044), the National Basic Research Program of China (2010CB933803), and Hong Kong Research Grants Council (RGC) General Research Funds (CityU 112608). 国际 This work was financially supported by the "863" project of China (2009AA03Z305), the National Natural Science Foundation of China (60876031 and 60806044), the National Basic Research Program of China (2010CB933803), and Hong Kong Research Grants Council (RGC) General Research Funds (CityU 112608). |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
You JB (You J. B.), Zhang XW (Zhang X. W.), Zhang SG (Zhang S. G.), Wang JX (Wang J. X.), Yin ZG (Yin Z. G.), Tan HR (Tan H. R.), Zhang WJ (Zhang W. J.), Chu PK (Chu P. K.), Cui B (Cui B.), Wowchak AM (Wowchak A. M.), Dabiran AM (Dabiran A. M.), Chow PP (Chow P. P.).Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes.APPLIED PHYSICS LETTERS,2010,96(20):Art. No. 201102 |
| Palavras-Chave | #半导体材料 #ZNO #DEPOSITION |
| Tipo |
期刊论文 |
