A double wavelength DFB laser with an identical active area for CWDM

A novel distribute feedback (DFB) laser which gave two different wavelengths under two distinct work conditions was fabricated. The laser consists of two Bragg gratings with different periods corresponding to wavelength spacing of 20 nm in an identical active area. When driving current was injected into one of the different sections separately, two different wavelengths at 1542.4 and 1562.5 nm were realized. The side mode suppression ratio (SMSR) of 45 dB or more both for the two Bragg wavelengths were achieved. The fabricating process of the laser was just the same as that of traditional DFB laser diode. This device can be potentially used in coarse wavelength division multiplexer (CWDM) as a promising light source and the technology idea can be used to enlarge the transmission capacity in metro area network (MAN).

An Improved Driving Circuit for Thermo-Optical Switch to Improve the Reliability of Thermo-Optical Switch Matrix

The influence of the heaters on the reliability of the thermo-optic (TO) switch matrix is analyzed and an improved driving circuit based on the analyzed results is designed and fabricated. The circuit can improve the reliability of the switch matrix device from 78.87% to 97.04% for a 4×4 optical switch device with a simplified tree structure. The simulation and experimental results show the circuit can provide suitable driving current for TO switch matrix.

质子辐照对GaAs/AlGaAs多量子阱材料光学性质的影响

用固定能量为20keV，剂量为10~(11)～10~(13)/cm~2的质子和固定剂量为1×10~(11)/cm~2，能量为30～100keV的质子，对GaAs/AlGaAs多量子阱材料进行辐照，得到了材料的光致发光特性随质子能量和剂量的变化关系，并进行了讨论。结果表明，质子辐照对材料的光学性质有破坏性的影响，这种影响是通过两种机制引起的。相同能量的质子辐照，随着辐照剂量的增大，对量子阱光致发光峰的破坏增大。相同剂量的质子辐照，当辐照质子的射程刚好覆盖整个量子阱结构区域时，对量子阱光致发光峰的破坏最严重，当辐照质子的射程超过量子阱结构区域时，对量子阱光致发光峰的破坏反而减小。

扫描隧道显微镜对InAs/GaAs自组织生长量子点的准原位研究

报道了用MBE-SPM联合系统对InAs/GaAs量子点进行准原位研究的初步结果。STM图像表明，在对n~+-GaAs衬底进行脱氧处理后，通过生长GaAs缓冲层能有效的改善表面质量。在缓冲层上继续生长2单原子层InAs后形成了量子点。SPM与透射电子显微镜给出的量子点形貌的异同在文中也给出了合理的解释，该研究工作的进一步深入将对自组织生长量子点的生长机理的理解和样品质量的提高有重要意义。

深冷中性铝团簇的产生和光电离

于2010-11-23批量导入

Growth and characterization of GaN on LiGaO2 and LiAlO2

The nearly lattice-matched LiGaO2 and LiAlO2 substrates have been used for the growth of GaN by LP-MOVPE. GaN epilayers have been grown on the two substrates at very low input partial pressure of hydrogen and relatively low growth temperature. The difference in the growth rate, crystal and optical qualities of hexagonal GaN epilayers grown on LiAlO2 and LiGaO2 substrate with two polar domains are investigated. LiAlO2 and LiGaO2 single crystal with a single domain structure and an adequate surface plane are promising substrates for the growth of high quality of hexagonal GaN thin films.

Energy band and acceptor binding energy of GaN and AlxGa1-xN

The hole effective-mass Hamiltonian for the semiconductors of wurtzite structure is established, and the effective-mass parameters of GaN and AlxGa1-xN are given. Besides the asymmetry in the z and x, y directions, the linear term of the momentum operator in the Hamiltonian is essential in determining the valence band structure, which is different from that of the zinc-blende structure. The binding energies of acceptor states are calculated by solving strictly the effective-mass equations. The binding energies of donor and acceptor for wurtzite GaN are 20 and 131, 97 meV, respectively, which are inconsistent with the recent experimental results. It is proposed that there are two kinds of acceptors in wurtzite GaN. One kind is the general acceptor such as C, substituting N, which satisfies the effective-mass theory, and the other includes Mg, Zn, Cd etc., the binding energy of which deviates from that given by the effective-mass theory. Experimentally, wurtzite GaN was grown by the MBE method, and the PL spectra were measured. Three main peaks are assigned to the DA transitions from the two kinds of acceptor. Some of the transitions were identified as coming from the cubic phase of GaN, which appears randomly within the predominantly hexagonal material. The binding energy of acceptor in ALN is about 239, 158 meV, that in AlxGa1-xN alloys (x approximate to 0.2) is 147, 111 meV, close to that in GaN. (C) 2000 Published by Elsevier Science S.A. All rights reserved.

东北沼泽湿地的潜在分布对气候变化的响应

东北是我国沼泽分布最广泛、类型最多的地区，而该地区也是中国将来气温变化幅度较大的地区，气候趋于暖干化，这些都不利于沼泽的发育和存在。据CGCM3气候变化模型预测：到2100年，温室气体排放浓度增高（排放水平720ppm、大于720ppm和550ppm）的三种排放情景下，气温分别增高3.22℃、4.36℃和2.13℃，年降水量分别平均增长102mm、127mm和74mm，干燥度增大，变化的幅度和排放浓度极为一致。本文将Logistic模型结合CGCM3气候变化数据，以预测未来100年后沼泽湿地的潜在分布。 由于沼泽分布具有地带性和非地带性规律的特点，本文针对整个东北地区、东北山地和东北平原建立了三个Logistic模型，环境因子包括11种地形因子和7种气候因子。三个模型的ROC值分别为0.86、0.92 和0.76，这说明山地区模型的精度最高，平原区精度最低。概率阈值基于ROC曲线设定为0.23、0.24 和0.26。结合CGCM3，预测结果显示：100年后，沼泽分布都趋于减少，尤其在平原地区，沼泽可能会全部消失。在COMMIT模式下，虽然CO2浓度保持不变，但是气候变化造成的后果依然持续进行，平原地区沼泽大量消失，沼泽潜在分布面积将减少34.11%；在SRES B1情景下，沼泽潜在分布面积减少66.46%，南部平原和山地沼泽消失；SRES A1B情景下，沼泽潜在分布面积减少80.11%，松嫩平原、松辽平原、长白山、大兴安岭南部地区沼泽消失，三江平原和小兴安岭地区只有零星存在；SRES A2情景下，沼泽潜在分布面积减少了87.25%，只分布在大兴安岭北部和小兴安岭西部的沟谷地带，其它各地几乎全部消失。通过GIS手段计算沼泽潜在分布与环境因子的相关系数，在东北区域和山地区，影响最大的地形因子和气候因子分别是坡位和寒冷指数；在平原区，影响最大的地形因子和气候因子分别是与河流距离和温暖指数。 MODIS数据是近年来常用的一种适用于宏观区域的遥感数据源。本文利用Logistic模型，多时相数据配合地形辅助数据，对大兴安岭北部地区的沼泽进行提取，分类精度84.63%。利用该数据进行沼泽分布模拟，能取得更高的精度（ROC值为0.957）。模拟结果表明：CO2浓度增高的三种排放情景下，沼泽的潜在分布面积分别减少54.16%、59.62%和73.51%。沼泽分布由南向北、由两侧向中心萎缩，且分布趋于破碎化。

典型污染海湾河口沉积物中砷的形态分布研究

锦州湾是我国较大的浅水海湾之一，该湾西南五里河沿岸汇集数家工厂排污直接人海， 形成该湾口处的最大污染源。其西南部潮滩地段已成为我国海域污染最严重的区域之一。 本文对葫芦岛3条河流、五里河口和锦州湾水体、沉积物中As的含量、分布、形态及行为进行了系统研究。结果表明，葫芦岛的连山河和五里河未受到明显的As污染，沉积物总As含量一般低于10 mg•kg-1，河水As含量一般低于10 μg•L-1，茨山河下游紧邻葫芦岛锌厂，受到了严重的As污染，沉积物As含量达75.2 mg•kg-1。五里河口区As污染非常严重，锌厂在该区排污口处沉积物As含量高达3176.1 mg•kg-1，超过国家沉积物As标准158倍。受锌厂排污的影响锦州湾As污染也很严重，沉积物中As最高含量达到569.5 mg•kg-1。沉积物和孔隙水As含量在剖面上具有相似的变化趋势，表明孔隙水As含量主要受沉积物As含量影响。锦州湾沉积物中As主要以可交换态存在，残渣态次之，盐酸提取态最少，表明锦州湾沉积物中As的活性很强，有大量的可交换态As随时会进入上覆水体，是重要的As释放源，沉积物中大量As的释放可能会对葫芦岛和锦州湾地区生态系统造成严重的威胁。 以盐度和酸碱度作为环境影响因子进行的释放模拟实验，结果显示：不同盐度条件下，沉积物中的As均在48h左右达到最大释放量。此时，盐度为0‰的水体中As的释放量最大，而其他两种盐度的水体中As的释放量较小且二者相差不大。另外，在室温条件下，随着pH值的升高，沉积物中As的释放量逐渐增加。 通过对不同形态的单一含砷矿物的As提取效果研究得出：对于分级提取方法中吸附态砷的最佳提取条件应为1M KH2PO4 (pH5) 24h, 无定型铁氧化物上结合的砷0.2M oxalic/oxalate (pH3)避光 6h, 硫化亚铁上结合的砷，0.2M oxalic/oxalate (pH3)避光 1h。