Surface morphology evolution of strained InAs/GaAs(331)a films

Surface morphology evolution of strained InAs/GaAs(331)A films was systematically investigated in this paper. Under As-rich conditions, InAs elongated islands aligned along [1 (1) over bar0] are formed at a substrate temperature of 510 degrees C. We explained it as a result of the anisotropic diffusion of adatoms. Under In-rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett. 77, 1330 (1996)], we interpret the resulting surface morphology evolution.

Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications

A novel technique of manufacturing Al0.3Ga0.7As pyramids by liquid phase epitaxy (LPE) for scanning probe microscopy (SPM) sensors is reported Four meticulously designed conditions-partial oxidation, deficient solute, air quenching and germanium doping result in defect-free homogeneous nucleation and subsequent pyramid formation. Micrometer-sized frustums and pyramids are detected by scanning electron microscopy (SEM). The sharp end of the microtip has a radius of curvature smaller than 50 nm. It is believed that such accomplishments would contribute not only to crystal growth theory, but also to miniature fabrication technology.

High quality microcrystalline Si films by hydrogen dilution profile

Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.

Electropolymerized poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) film on ITO glass and its application in photovoltaic device

Poly(3,4-ethylenedioxythiopliene):poly(styrene sulfonate) (PEDOT:PSS) films have been electrochemically polymerized in situ on ITO glass substrate in boron trifluoride diethyl etherate electrolyte (BFEE). Cyclic voltammograms show good redox activity and stability of the PEDOT films. These films had been directly used to fabricate organic-inorganic hybrid solar cells with the structure of ITO/PEDOT/ZnO:MDMC-PPV/Al. The solar cells made of electrochemically polymerized films exhibit higher energy conversion efficiencies compared with that prepared by the spin-coating method, and the highest value is 0.33%. This in-situ electropolymerized method effectively simplifies fabricating procedures and may blaze a facile and economical route for producing high-efficiency solar cells.

Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

Spectroscopic ellipsometry study of In2O3 thin films

In2O3 films grown by helicon magnetron sputtering with different thicknesses were characterized by spectroscopic ellipsometry in the energy range from 1.5 to 5.0 eV. Aside from one amorphous sample prepared at room substrate temperature, polycrystalline In2O3 films with cubic crystal structure were confirmed for other four samples prepared at the substrate temperature of 450 A degrees C. Excellent SE fittings were realized by applying 1 and/or 2 terms F&B amorphous formulations, building double layered film configuration models, and further taking account of void into the surface layer based on Bruggeman effective medium approximation for thinner films. Spectral dependent refractive indices and extinction coefficients were obtained for five samples. The curve shapes were well interpreted according to the applied dispersion formulas. Almost similar optical band gap values from 3.76 to 3.84 eV were obtained for five samples by Tauc plot calculation using extinction coefficients under the assumption of direct allowed optical transition mode.

Uniform mems chip temperatures in the nucleate boiling heat transfer region by selecting suitable, medium boiling number range

The not only lower but also uniform MEMS chip temperatures can he reached by selecting suitable boiling number range that ensures the nucleate boiling heat transfer. In this article, boiling heat transfer experiments in 10 silicon triangular microchannels with the hydraulic diameter of 55.4 mu m were performed using acetone as the working fluid, having the inlet liquid temperatures of 24-40 degrees C, mass fluxes of 96-360 kg/m(2)s, heat fluxes of 140-420 kW/m(2), and exit vapor mass qualities of 0.28-0.70. The above data range correspond to the boiling number from 1.574 x 10(-3) to 3.219 x 10(-3) and ensure the perfect nucleate boiling heat transfer region, providing a very uniform chip temperature distribution in both streamline and transverse directions. The boiling heat transfer coefficients determined by the infrared radiator image system were found to he dependent on the heat Axes only, not dependent on the mass Axes and the vapor mass qualities covering the above data range. The high-speed flow visualization shows that the periodic flow patterns take place inside the microchannel in the time scale of milliseconds, consisting of liquid refilling stage, bubble nucleation, growth and coalescence stage, and transient liquid film evaporation stage in a full cycle. The paired or triplet bubble nucleation sites can occur in the microchannel corners anywhere along the flow direction, accounting for the nucleate boiling heat transfer mode. The periodic boiling process is similar to a series of bubble nucleation, growth, and departure followed by the liquid refilling in a single cavity for the pool boiling situation. The chip temperature difference across the whole two-phase area is found to he small in a couple of degrees, providing a better thermal management scheme for the high heat flux electronic components. Chen's [11 widely accepted correlation for macrochannels and Bao et al.'s [21 correlation obtained in a copper capillary tube with the inside diameter of 1.95 mm using R11 and HCFC123 as working fluids can predict the present experimental data with accepted accuracy. Other correlations fail to predict the correct heat transfer coefficient trends. New heat transfer correlations are also recommended.

Are the available boiling heat transfer coefficients suitable for silicon microchannel heat sinks?

The typical MEMS fabrication of micro evaporators ensures the perfect smooth wall surface that is lack of nucleation sites, significantly decreasing the heat transfer coefficients compared with miniature evaporators fabricated using copper or stainless steel. In the present paper, we performed the boiling heat transfer experiment in silicon triangular microchannel heat sink over a wide parameter range for 102 runs. Acetone was used as the working fluid. The measured boiling heat transfer coefficients versus the local vapor mass qualities are compared with the classical Chen’s correlation and other correlations for macro and miniature capillary tubes. It is found that most of these correlations significantly over-predict the measured heat transfer coefficients. New correlations are given. There are many reasons for such deviations. The major reason is coming from the perfect smooth silicon surface that lowers the heat transfer performances. New theory is recommended for the silicon microchannel heat sink that should be different from metallic capillary tubes.

Effect of pulse heating parameters on the microscale bubble dynamics at a microheater surface

We study the effects of pulse heating parameters on the micro bubble behavior of a platinum microheater (100 mu m x 20 mu m) immersed in a methanol pool. The experiment covers the heat fluxes of 10-37 MW/m(2) and pulse frequencies of 25-500 Hz. The boiling incipience is initiated at the superheat limit of methanol, corresponding to the homogeneous nucleation. Three types of micro boiling patterns are identified. The first type is named as the bubble explosion and regrowth, consisting of a violent explosive boiling and shrinking, followed by a slower bubble regrowth and subsequent shrinking, occurring at lower heat fluxes. The second type, named as the bubble breakup and attraction, consists of the violent explosive boiling, bubble breakup and emission, bubble attraction and coalescence process, occurring at higher heat fluxes than those of the first type. The third type, named as the bubble size oscillation and large bubble formation, involves the initial explosive boiling, followed by a short periodic bubble growth and shrinking. Then the bubble continues to increase its size, until a constant bubble size is reached which is larger than the microheater length. 

Influence of 3A molecular sieve to tetrahydrofuran(THF) hydrate formation

Visual observation of the THF hydrate formation process in the presence of a 3A molecular sieve has been made at normal atmosphere and below a temperature of zero by microscopy. The results indicate that a 3A molecular sieve can induce the nucleation of the THF hydrate and promote the THF hydrate growth. With the existence of a 3A molecular sieve, the growth rate of THF hydrate is between 0.01 and 0.05 mu m/s. In comparison with the system without any 3A molecular sieve, the growth rate increases about 4 nm/s. After the THF hydrate grows into megacryst, the crystals will recombine and partially change under the same condition.

A kinetic model for nanocrystal morphology evolution

A kinetic model is developed with the goal of understanding and predicting the morphology evolution of nonocrystals in nonequilibrium growth conditions. The model is based on the assumption that under such conditions, different crystal planes have different kinetic parameters. This model focuses on the morphology-developing stage and is successfully related to the nucleation process and other crystal evolution mechanisms. It is believed to be a universal model and is applied to discuss the morphology evolution of CdSe nanocrystals, including the aspect ratio, injection I schemes, ligands effect and morphology distribution.

Langmuir-Blodgett 薄膜诱导晶体生长研究

近年来，Langmuir—Blodgett（LB）薄膜诱导晶体生长的方法引起了人们的极大关注。通过优化LB膜的结构和化学性质可以调控晶体的结构、形貌、取向、晶型。本论文在此领域的主要研究内容如下： (1) 制备了硬脂酸和十八胺两种具有不同结构和官能团的LB膜，然后把这两种膜垂直浸入到中性的甘氨酸溶液中。实验结果表明用不同结构和化学性质的LB膜不仅可以调控晶体的结构、形貌和取向，并且可以在相同的溶液中诱导出不同晶型的晶体。 (2) 制备了Y型硬脂酸LB膜，然后把这种模板以不同的方式浸入到氯化钾溶液中。通过改变LB膜模板在溶液中的放置方式，控制溶液中的诱导成核和自发成核的过程，从而生成不同形貌的氯化钾晶体。 (3)我们研究了不同热力学状态的LB膜诱导五水硫酸铜晶体生长过程。结果表明LB膜即使在液态状态下，仍有诱导晶体生长的能力。且LB膜的热力学状态对晶体的形貌和取向有很大的影响。 另外，我们在以上工作之外，还作了两项其他工作。 (4) 研究了各种羧酸类（甲酸、乙酸、丙酸）、丙酮、醇类（甲醇、乙醇、丙醇、丁醇）对谷氨酸溶液结晶晶型的影响。结果表明：当70°C的谷氨酸饱和溶液快速冷却搅拌到0°C时，有羧酸类物质存在时可以得到β型晶体;而当有酮类、醇类、或无添加剂时在相同条件下得到α型晶体。 (5) 利用LB技术制备了聚苯乙烯和硬脂酸的混合薄膜。实验结果证明PS和SA在混合LB膜中是相分离的。其过程是PS在空气/水界面上首先发生聚集,然后这种聚集的程度随着膜压的增加而增大.并且PS在空气-LB膜界面上在空气/LB膜界面上的聚集程度随着时间仍继续发生改变。

聚3-羟基烷酸酯异相成核结晶的研究

本论文以具有巨大应用前景的PHBV作为研究对象，针对PHBV结晶速率低，易产生二次结晶，从而严重影响其加工性能和力学性能的稳定性等方面的缺点，根据PHBV的分子结构和脆性的机理分析，试图采用添加成核剂的方法，提高PHBV的结晶速率和结晶度，从而缩短PHBV的加工成型周期，控制其聚集态结构，提高其制品的稳定性，改善材料的物理力学性能。并在此基础上，探讨PHBV异相成核结晶的机理，加深成核剂对聚合物有效成核机理的认识，更好的理解聚合物结晶过程。1．添加成核剂的量达到0.5wt％时，对苯二甲酸（TPA）对PHBV起到了显著的结晶成核作用。结晶起始温度提高了约20℃，结晶速率达到最大值所对应的温度T_p提高了30℃，结晶烙增加了15J/g，结晶速率提高了4.4倍。这些数据表明，TPA是一种对PHBV极为有效的成核剂。2．加入成核剂TPA的PHBV表现出典型的双熔融行为，主要原因是TPA对PHBV的结晶成核作用和PHBV的熔融再结晶。低温侧的熔融峰对应着PHBV自熔体降温过程形成的结晶，高温侧的对应着PHBV升温过程中形成的结晶。3．TPA的成核作用大大的改变了PHBV的形态结构，使PHBV的球晶尺寸明显减小，球晶数量增大。4．TPA使PHBV晶体在（110）和（020）方向上微晶尺寸变大，晶区和非晶区的电子密度差增大。5．添加0.5wt％的TPA后，PHBV的断裂伸长率从4％提高到10％。6．TPA、IPA、淀粉和山梨醇对PHBV的结晶都具有很明显的成核作用，其原因可能是化学结构上都具有极性基团。7．红外光谱研究没有能够有效的给出PHBV与TPA是否存在特殊相互作用，从而导致TPA对PHBV的结晶成核作用的证据，但是，PHBV拨基伸缩振动谱带随温度的变化却给出了TPA对PHBv的结晶成核作用始于160℃高温。

Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices

With a low strained InxGa1-xAs/GaAs(x similar to 0.01) superlattice (SL) buffer layer, the crystal quality of 50 period relaxed In0.3Ga0.7As/GaAs strained SLs has been greatly improved and over 13 satellite peaks are observed from X-ray double-crystal diffraction, compared with three peaks in the sample without the buffer layer. Cross-section transmission electron microscopy reveals that the dislocations due to superlattice strain relaxation are blocked by the SLs itself and are buried into the buffer layer. The role of the SL buffer layer lies in that the number of the dislocations is reduced in two ways: (1) the island formation is avoided and (2) the initial nucleation of the threading dislocations is retarded by the high-quality growth of the SL buffer layer. When the dislocation pinning becomes weak as a result of the reduced dislocation density, the SLs can effectively move the threading dislocations to the edge of the wafer.

Liquid encapsulated-melt zone processing of GaAs

A liquid encapsulated melt Bone process has been developed for single crystal growth of GaAs. Single crystals of 40 mm long have been grown with this technique. To avoid unwanted nucleation events and maintain a constant crystal diameter, from top to bottom growth using a short zone with a convex zone surface was found to give the best results. An arsenic overpressure was used to in conjunction with a B2O3 encapsulant in order to suppress arsenic dissociation from the melt and maintain the stoichiometry of the crystal.