Effect of the nature of annealing solvent on the morphology of diblock copolymer blend thin films

The morphologies and structures for the thin film of blend systems consisting of two asymmetric polystyrene-block-polybutadiene (SB) diblock copolymers induced by annealing in the vapor of different solvents, namely, cyclohexane, benzene, and heptane, which have different selectivity or preferential affinity for a certain block, were investigated by tapping mode atomic force microscopy (AFM) and transmission electron microscopy (TEM). The results revealed that even a slight preferential affinity of good solvent for one block would strongly alter the morphology of the blend thin film.

Ring-shaped morphology in H-shaped block copolymer thin films

The formation of ring-shaped structures in an H-shaped block copolymer [a poly(ethylene glycol) backbone with polystyrene branches, i.e., (PS)(2)PEG(PS)(2)] thin film was investigated when it was annealed in saturated PEG-selective acetonitrile vapor. Our results clearly indicate that ring formation is determined by the initial morphology of the spin-coated film, the solvent vapor selectivity and the environmental temperature of the solvent-annealing process. Only the films with the initial core-shell cylindrical structure in strongly PEG-selective acetonitrile vapor could form the ring-shaped structures.

Novel morphology of polyethylene crystals created upon melt crystallization of spin-coated film

We demonstrate a strikingly novel morphology of high-density polyethylene (HDPE) crystal obtained upon melt crystallization of spin-coated thin film. This crystal gives windmill-like morphology which contains a number of petals. A detailed inspection on this morphology reveals that each petal is actually composed of terrace-stacked PE lamellae, in which the polymer chains within crystallographic a-c planes adopt similar to 45 degrees tilting around b-axis. The surrounding domains associated with a petal of the windmill composed of twisted lamellar overgrowths with an identical orientation of their long axis, which is the crystallographic b-axis shared by the petal and its corresponding twisted lamellar overgrowths.

Weak epitaxy growth of organic semiconductor thin films

The fabrication of organic semiconductor thin films is extremely important in organic electronic devices. This tutorial review-which should particularly appeal to chemists and physicists interested in organic thin-film growth, organic electronic devices and organic semiconductor materials-summarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality organic semiconductor thin films.

GIUSAXS and AFM Studies on Surface Reconstruction of Latex Thin Films during Thermal Treatment

The structural evolution of a single-layer latex film during annealing was studied via grazing incidence ultrasmall-angle X-ray scattering (GIUSAXS) and atomic force microscopy (AFM). The latex particles were composed of a low-T-g (-54 degrees C) core (n-butylacrylate, 30 wt %) and a high-T-g (41 degrees C) shell (t-butylacrylate, 70 wt %) and had an overall diameter of about 500 nm. GIUSAXS data indicate that the q(y) scan at q(z) = 0.27 nm(-1) (out-of-plane scan) contains information about both the structure factor and the form factor. The GIUSAXS data on latex films annealed at various temperatures ranging from room temperature to 140 degrees C indicate that the structure of the latex thin film beneath the surface changed significantly. The evolution of the out-of-plane scan plot reveals the surface reconstruction of the film. Furthermore, we also followed the time-dependent behavior of structural evolution when the latex film was annealed at a relatively low temperature (60 degrees C) where restructuring within the film can be followed that cannot be detected by AFM, which detects only surface morphology.

Probing structural changes of spin-coated polystyrene film after swelling and precipitation by synchrotron GIUSAXS and AFM

Polystyrenc film of about 50 nm in thickness on silicon wafer was obtained by spin-coating in tetrahydrofuran solution.The film exhibits a rough surface as shown by atomic force microscopy images and ellipsometry data.

Narion/Poly(sodium 4-styrenesulfonate) mixed coating modified bismuth film electrode for the determination of trace metals by anodic stripping voltammetry

To improve the reproducibility, stability, and sensitivity of bismuth film electrode (BiFE), we studied the performances of a mixed coating of two cation-exchange polymers, Nafion (NA) and poly(sodium 4-styrenesulfonate) (PSS), modified glassy carbon BiFE (GC/NA-PSS/BiFE). The characteristics of GC/NA-PSS/BiFE were investigated by scanning electron microscopy and cyclic voltammetry. Various parameters were studied in terms of their effect on the anodic stripping voltarnmetry (ASV) signals. Under optimized conditions, the limits of detection were 71 ng L-1 for Cd(II) and 93 ng L-1 for Pb(II) with a 10 min preconcentration. The results exhibited that GC/NA-PSS/BiFE can be a reproducible and robust toot for monitor of trace metals by ASV rapidly and environmentally friendly, even in the presence of surface-active compounds.

Development of nanodomain and fractal morphologies in solvent annealed block copolymer thin films

We have systematically studied the thin film morphologies of asymmetric polystyrene-block-poly(ethylene oxide) (PS-b-PEO) diblock copolymer subjected to solvent vapors of varying selectivity for the constituent blocks. Upon a short treatment in neutral or PS-selective vapor, the film exhibited a highly ordered array of hexagonally packed, cylindrical microdomains. In the case of PEO selective vapor annealing, such ordered cylindrical microdomains were not obtained. instead, fractal patterns on the microscale were observed and their growth processes investigated. Furthermore, hierarchical structures could be obtained if the fractal pattern was exposed to neutral or PS selective vapor.

Tunable ordered droplets induced by convection in phase-separating P2VP/PS blend film

Ordered hexagonal droplets patterns in phase-separating polymeric blend films of polystyrene and poly(2-vinylpyridine) (PS/PVP) formed due to the convection effect by solvent evaporation. The influences of PS molecular weight, solvent evaporation rate, and the weight ratio of PS to PVP on the PVP-rich domains pattern formation and distributions were investigated by atomic force microscope (AFM). Only in an appropriate range of molecular weight of PS, can the ordered pattern form. Too low or too high molecular weight of PS led no ordered pattern due to the viscosity effects. The increase of solvent evaporation rate decreased the mean radius of the PVP-rich domains and the intervals between the centers of the domains due to the enhancement of the viscosity on the top layer of the fluid film. The increase of the weight ratio of PS to PVP decreased mean radius of the PVP-rich domains whereas the intervals between the centers of droplets remained constant. Therefore, the size and the distributions of ordered patterns can be tuned by the polymer molecular weight, the weight ratio of the two components and the solvent evaporation rate.

Luminescent sol-gel thin films based on europium-substituted heteropolytungstates

Polyester thin films containing europium-substituted heteropolytungstate were obtained on quartz plate by the sol-gel method. The films exhibited the characteristic emission bands of the europium ion. The red to orange intensity ratio (R:O) of Eu3+ in the films increased as compared to the corresponding heteropolytungstate solids. The fluorescence lifetime of europium is shorter in the thin film than in the heteropolytungstate solid. The results indicated that the formation of europium-substituted heteropolytungstate/polyester thin film has great effect on the luminescence of europium- substituted heteropolytungstate.

Studies on microstructure bilayer film of ultrasonic dipped cadmium sulfide and d.c. sputtered indium tin oxide

A bilayer CdS/ITO film was obtained. The dipped CdS was grown by an ultrasonic colloid deposition (USCD) method. Microstructure of the CdS film made by USCD has a wider transmission range and a higher transmittance. Amorphous indium-tin-oxide (ITO) thin film was deposited using d.c. magnetron-sputtering at room temperature. The ITO films exhibited good conductivity and maximum transmittance of 94%. The CdS/ITO bilayer was investigated by means of GIXD (grazing incidence X-ray diffraction) at different incidence angles (alpha = 0.20-5.00degrees) and XRD. We discuss a model for the thin bilayer film. SEM and AFM show that homogeneous CdS films with a bar-shaped ultrafine particles and ITO film with nanometer structure. The mechanism of the bilayer CdS/ITO film is discussed.

Polyhedral oligomeric silsesquioxane nanocomposite thin films via layer-by-layer electrostatic self-assembly

Fabrication of ultrathin polymer composite films with low dielectric constants has been demonstrated. Octa( aminophenyl) silsesquioxane (OAPS) was synthesized and assembled with poly( acrylic acid) (PAA) and poly( styrene sulfonate) (PSS) via a layer-by-layer electrostatic self-assembly technique to yield nanoporous ultrathin films. The OAPS was soluble in water at pH 3 or lower, and suitable pH conditions for the OAPS/PAA and OAPS/PSS assemblies were determined. The multilayer formation process was studied by contact angle analysis, X-ray photoelectron spectroscopy, atomic force microscopy, quartz crystal microgravimetry, UV-vis spectroscopy, and ellipsometry. The multilayer growth was found to be steady and uniform, and the analysis of the film surface revealed a rough topography due to OAPS aggregates. The incorporation of porous OAPS molecules into the thin films significantly lowered their dielectric constants. The OAPS/PAA multilayer thin film thus prepared exhibited a dielectric constant of 2.06 compared to 2.58 for pure PAA film. The OAPS/PAA multilayer film was heated to effect cross-linking between the OAPS and the PAA layers, and the transformation was verified by reflection-absorption Fourier transform infrared spectroscopy.

Morphologies in solvent-annealed thin films of symmetric diblock copolymer

We have systematically studied the thin film morphologies of symmetric poly(styrene)-block-poly(methyl methacrylate) (PS-b-PMMA) diblock copolymer after annealing to solvents with varying selectivity. Upon neutral solvent vapor annealing, terraced morphology is observed without any lateral structures on the surfaces. When using PS-selective solvent annealing, the film exhibits macroscopically flat with a disordered micellar structure. While PMMA-selective solvent annealing leads to the dewetting of the film with fractal-like holes, with highly ordered nanoscale depressions in the region of undewetted films. In addition, when decreasing the swelling degree of the film in the case of PMMA-selective solvent annealing, hills and valleys are observed with the coexistence of highly ordered nanoscale spheres and stripes on the surface, in contrast to the case of higher swelling degree. The differences are explained qualitatively on the basis of polymer-solvent interaction parameters of the different components.

Buildup of gold nanoparticle multilayer thin films based on the covalent-bonding interaction between boronic acids and polyols

A novel method for the fabrication of gold nanoparticle multilayer films based on the covalent-bonding interaction between boronic acid and polyols, poly(vinyl alcohol) (PVA), was developed. The multilayer buildup was monitored by UV-vis absorbance, spectroscopy, which showed a linear increase of the film absorbance with the number of adsorbed Au layers and indicated the stepwise and uniform assembling process. The atomic force microscopy (AFM) image showed that a compact gold multilayer thin film was successfully assembled. The residual boronic acid group on the surface of thin film Could incorporate glycosylated-protein horseradish peroxidase (HRP), and good catalytic activity for H2O2 could be observed.

Improved performance by a double-insulator layer in organic thin-flim transistors

Organic thin film transistors based on pentacene are fabricated by the method of full evaporation. The thickness of insulator film can be controlled accurately, which influences the device operation voltage markedly. Compared to the devices with a single-insulator layer, the electric performance of devices by using a double-insulator as the gate dielectric has good improvement. It is found that the gate leakage current can be reduced over one order of magnitude, and the on-state current can be enhanced over one order of magnitude. The devices with double-insulator layer exhibit field-effect mobility as large as 0.14 cm(2)/Vs and near the zero threshold voltage. The results demonstrate that using proper double insulator as the gate dielectrics is an effective method to fabricate OTFTs with high electrical performance.