Dephasing rate in an InAs/GaAs single-electron quantum dot qubit

We have obtained the parameter-phase diagram, which unambiguously defines the parameter region for the use of InAs/GaAs quantum dot as two-level quantum system in quantum computation in the framework of the effective-mass envelope function theory. Moreover, static electric field is found to efficiently prolong decoherence time. As a result, decoherence time may reach the order of magnitude of milli-seconds as external static electric field goes beyond 20 kV/cm if only vacuum fluctuation is taken as the main source for decoherence. Our calculated results are useful for guiding the solid-state implementation of quantum computing.

Analysis of mode quality factors for equilateral triangle semiconductor microlasers with rough sidewalls

The eigenmode characteristics for equilateral triangle resonator (ETR) semiconductor microlasers are analysed by the finite-difference time-domain technique and the Pade approximation. The random Gaussian correlation function and sinusoidal function are used to model the side roughness of the ETR. The numerical results show that the roughness can cause the split of the degenerative modes, but the confined modes can still have a high quality factor. For the ETR with a 3 mum side length and the sinusoidal fluctuation, we can have a quality factor of 800 for the fundamental mode in the wavelength of 1500 nm, as the amplitude of roughness is 75 mn.

Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy

A series of superlattices delta-GaNxAs1-x/GaAs were grown by a DC plasma-N-2-assisted molecular beam epitaxy. The evolution of the surface reconstruction during the growth has been studied with the use of in situ reflection high-energy electron diffraction. The superlattices have been characterized by high-resolution X-ray diffraction measurements. Distinct satellite peaks indicate that the superlattices are of good quality. The N compositions in strained GaNxAs1-x monolayers are obtained from the dynamical simulations of the measured X-ray diffraction patterns. The periodicity fluctuations of N composition are obtained from a kinematical method dependent on the broadening of the satellite peaks of the X-ray diffraction. (C) 2000 Elsevier Science B.V. All rights reserved.

Investigation of periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices by the kinematical simulation of x-ray diffraction

Periodicity fluctuations of layer thickness and composition in a superlattice not only decrease the intensity, they also broaden the width of the satellite peaks in the x-ray diffraction pattern. In this letter, we develop a method that is dependent on the width of satellite peaks to assess periodicity fluctuations of a superlattice quickly. A linear relation of the magnitude of fluctuations, peak width and peak order has been derived from x-ray diffraction kinematical theory. By means of this method, periodicity fluctuations in strained (GaNAs)(1)(GaAs)(m) superlattices grown on GaAs substrates by molecular beam epitaxy have been studied. Distinct satellite peaks indicate that the superlattices are of high quality. The N composition of 0.25 and its fluctuation of 20% in a strained GaNxAs1-x monolayer are obtained from simulations of the measured diffraction pattern. The x-ray simulations and in situ observation results of reflection high-energy electron diffraction are in good agreement. (C) 1999 American Institute of Physics. [S0003-6951(99)00828-1].

Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters

Photoluminescence properties of SiGe/Si single wells with fluctuating structural parameters are studied. Four SiGe/Si single wells have been grown on Si(001) at 750 degrees C by disilane and solid Ge molecular beam epitaxy with varied disilane cracking-temperatures. Intense NP and TO-phonon replicas are detected up to 70 K in the photoluminescence spectra and the activation energy of the thermal quenching of the photoluminescence is 28 +/- 4 meV. The high growth temperature and purposeful introduction of fluctuation of structural parameters may be responsible for the improvement of the thermal quenching property.

Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots

The electronic band structures and optical gains of InAs1-xNx/GaAs pyramid quantum dots (QDs) are calculated using the ten-band k . p model and the valence force field method. The optical gains are calculated using the zero-dimensional optical gain formula with taking into consideration of both homogeneous and inhomogeneous broadenings due to the size fluctuation of quantum dots which follows a normal distribution. With the variation of QD sizes and nitrogen composition, it can be shown that the nitrogen composition and the strains can significantly affect the energy levels especially the conduction band which has repulsion interaction with nitrogen resonant state due to the band anticrossing interaction. It facilitates to achieve emission of longer wavelength (1.33 or 1.55 mu m) lasers for optical fiber communication system. For QD with higher nitrogen composition, it has longer emission wavelength and less detrimental effect of higher excited state transition, but nitrogen composition can affect the maximum gain depending on the factors of transition matrix element and the Fermi-Dirac distributions for electrons in the conduction bands and holes in the valence bands respectively. For larger QD, its maximum optical gain is greater at lower carrier density, but it is slowly surpassed by smaller QD as carrier concentration increases. Larger QD can reach its saturation gain faster, but this saturation gain is smaller than that of smaller QD. So the trade-off between longer wavelength, maximum optical, saturation gain, and differential gain must be considered to select the appropriate QD size according to the specific application requirement. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3143025]

Formal specification and refinement of a safe train control function

Motivated by the design and development challenges of the BART case study, an approach for developing and analyzing a formal model for reactive systems is presented. The approach makes use of a domain specific language for specifying control algorithms able to satisfy competing properties such as safety and optimality. The domain language, called SPC, offers several key abstractions such as the state, the profile, and the constraint to facilitate problem specification. Using a high-level program transformation system such as HATS being developed at the University of Nebraska at Omaha, specifications in this modelling language can be transformed to ML code. The resulting executable specification can be further refined by applying generic transformations to the abstractions provided by the domain language. Problem dependent transformations utilizing the domain specific knowledge and properties may also be applied. The result is a significantly more efficient implementation which can be used for simulation and gaining deeper insight into design decisions and various control policies. The correctness of transformations can be established using a rewrite-rule based induction theorem prover Rewrite Rule Laboratory developed at the University of New Mexico.

An automata theoretic decision procedure for the propositional mu-calculus

The propositional mu-calculus is a propositional logic of programs which incorporates a least fixpoint operator and subsumes the propositional dynamic logic of Fischer and Ladner, the infinite looping construct of Streett, and the game logic of Parikh. We give an elementary time decision procedure, using a reduction to the emptiness problem for automata on infinite trees. A small model theorem is obtained as a corollary.

A logic for default reasoning

The need to make default assumptions is frequently encountered in reasoning about incompletely specified worlds. Inferences sanctioned by default are best viewed as beliefs which may well be modified or rejected by subsequent observations. It is this property which leads to the non-monotonicity of any logic of defaults. In this paper we propose a logic for default reasoning. We then specialize our treatment to a very large class of commonly occuring defaults. For this class we develop a complete proof theory and show how to interface it with a top down resolution theorem prover. Finally, we provide criteria under which the revision of derived beliefs must be effected.

automatic construction of finite algebras

This paper deals withmodel generation for equational theories, i.e., automatically generating (finite) models of a given set of (logical) equations. Our method of finite model generation and a tool for automatic construction of finite algebras is described. Some examples are given to show the applications of our program. We argue that, the combination of model generators and theorem provers enables us to get a better understanding of logical theories. A brief comparison between our tool and other similar tools is also presented.

Stacking chirped pulse optical parametric amplification

Stacking chirped pulse optical parametric amplification based on a home-built Yb(3+)-doped mode-locked fiber laser and an all-fiber pulse stacker has been demonstrated. Energic 11 mJ shaped pulses with pulse duration of 2.3 ns and a net total gain of higher than 1.1 x 10(7) at fluctuation less than 2% rms are achieved by optical parametric amplification pumped by a Q-switched Nd:YAG frequency-doubled laser, which provides a simple and efficient amplification scheme for temporally shaped pulses by stacking chirped pulse. (C) 2009 Elsevier B.V. All rights reserved.

氮磷肥配施对夏玉米土壤含水量及水分利用效率的影响

随土壤剖面深度的增加,土壤含水量逐渐降低,上层土壤含水量变幅大于下层。在同一氮肥水平下,夏玉米各生长期内0~50 cm土层含水量呈施磷处理高于不施磷处理,50~110 cm土层则反之。苗期—拔节—灌浆—收获期0~110 cm土壤蓄水量呈升高—降低—升高趋势;苗期呈氮磷配施处理高于单施氮肥处理,其它生长期氮肥与磷肥水平为120 kg/hm2配施处理最高;表层50 cm土层蓄水量均呈现氮磷配施处理高于单施氮肥处理,50~110 cm土层则反之。氮磷配施能显著提高产量及水分利用效率,二者均以配施磷肥120 kg/hm2处理最高;当施磷量超过120 kg/hm2后,产量和水分利用效率反而有下降趋势。

黄土旱塬冬小麦水分利用效率及相关生理特性研究

采用Li-6400便携式光合测定系统在模拟光照条件下,通过对冬小麦叶片生理指标及其相应环境因子的测定,研究了小麦的生理指标和叶片水分利用效率的动态变化规律及其对环境因子的响应。结果表明:净光合速率日变化呈不明显的双峰曲线,蒸腾速率日变化呈明显的倒"U"型曲线,且不同生育期两者峰值出现的时间不同。拔节期环境因子对生理指标的影响要比灌浆期明显的多。光合有效辐射和CO2浓度是对净光合速率和叶片蒸腾速率影响最强烈的环境因子。在小麦整个生长过程中,温湿度对气孔导度的影响在逐渐增大,对胞间CO2浓度的影响也比较明显。小麦叶片水分利用效率的日变化呈不明显的双峰曲线,其峰值出现的时间早于净光合速率和蒸腾速率峰值出现的时间。灌浆期日平均WUE比拔节期低30.5%。小麦净光合速率、蒸腾速率和气孔导度三者之间极显著相关,叶片温度与气孔导度显著负相关。