Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I

The narrow stripe selective growth of the InGaAlAs bulk waveguides and InGaAlAs MQW waveguides was first investigated. Flat and clear interfaces were obtained for the selectively grown InGaAlAs waveguides under optimized growth conditions. These selectively grown InGaAlAs waveguides were covered by specific InP layers, which can keep the waveguides from being oxidized during the fabrication of devices. PL peak wavelength shifts of 70 nm for the InGaAlAs bulk waveguides and 73 nm for the InGaAlAs MQW waveguides were obtained with a small mask stripe width varying from 0 to 40 gm, and were interpreted in considering both the migration effect from the masked region (MMR) and the lateral vapor diffusion effect (LVD). The quality of the selectively grown InGaAlAs MQW waveguides was confirmed by the PL peak intensity and the PL FWHM. Using the narrow stripe selectively grown InGaAlAs MQW waveguides, then the buried heterostructure (BH) lasers were fabricated by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good performance characteristics, with a high internal differential quantum efficiency of about 85% and an internal loss of 6.7 cm(-1).

Surface plasmon waves generated by nanogrooves through spectral interference

A pure surface plasmon polariton (SPP) model predicted that the SPP excitation in a slit-groove structure at metallodielectric interfaces exhibits an intricate dependence on the groove width P. Lalanne et al. [Phys. Rev. Lett. 95, 263902 (2005); Nat. Phys. 2, 551 (2006)]. In this paper, we present a simple far-field experiment to test and validate this interesting theoretical prediction. The measurement results clearly demonstrate the predicted functional dependence of the SPP coupling efficiency on groove width, in good agreement with the SPP picture.

Self-Heating Effect on the Two-State Lasing Behaviors in 1.3-mu m InAs-GaAs Quantum-Dot Lasers

Experimental and theoretical study of the self-heating effect on the two-state lasing behaviors in 1.3-mu m self-assembled InAs-GaAs quantum dot (QD) lasers is presented. Lasing spectra under different injected currents, light-current (L-I) curves measured in continuous and pulsed regimes as well as a rate-equation model considering the current heating have been employed to analyze the ground-state (GS) and excited-state (ES) lasing processes. We show that the self-heating causes the quenching of the GS lasing and the ES lasing by the increased carrier escape rate and the reduced maximum modal gain of GS and ES.

A shortest path algorithm for moving objects in spatial network databases

One of the most important kinds of queries in Spatial Network Databases (SNDB) to support location-based services (LBS) is the shortest path query. Given an object in a network, e.g. a location of a car on a road network, and a set of objects of interests, e.g. hotels,gas station, and car, the shortest path query returns the shortest path from the query object to interested objects. The studies of shortest path query have two kinds of ways, online processing and preprocessing. The studies of preprocessing suppose that the interest objects are static. This paper proposes a shortest path algorithm with a set of index structures to support the situation of moving objects. This algorithm can transform a dynamic problem to a static problem. In this paper we focus on road networks. However, our algorithms do not use any domain specific information, and therefore can be applied to any network. This algorithm’s complexity is O(klog2 i), and traditional Dijkstra’s complexity is O((i + k)2).

a shortest path algorithm for moving objects in spatial network databases

中国计算机学会

Catalytic Activation of Mg-Doped GaN by Hydrogen Desorption Using Different Metal Thin Layers

The annealing of Mg-doped GaN with Pt and Mo layers has been found to effectively improve the hole concentration of such material by more than 2 times as high as those in the same material without metal. Compared with the Ni and Mo catalysts, Pt showed good activation effect for hydrogen desorption and ohmic contact to the Ni/Au electrode. Despite the weak hydrogen desorption, Mo did not diffuse into the GaNepilayer in the annealing process, thus suppressing the carrier compensation phenomenon with respect to Ni and Pt depositions, which resulted in the high activation of Mg acceptors. For the GaN activated with the Ni, Pt, and Mo layers, the blue emission became dominant, followed by a clear peak redshift and the degradation of photoluminescence signal when compared with that of GaN without metal.

Observation of N-Shaped Negative Differential Resistance in GaAs-Based Modulation-Doped Field Effect Transistor with InAs Quantum Dots

N-shaped negative differential resistance (NDR) with a high peak-to-valley ratio (PVR) is observed in a GaAs-based modulation-doped field effect transistor (MODFET) with InAs quantum dots (QDs) in the barrier layer (QDFET) compared with a GaAs MODFET. The NDR is explained as the real-space transfer (RST) of high-mobility electrons in a channel into nearby barrier layers with low mobility, and the PVR is enhanced dramatically upon inserting the QD layer. It is also revealed that the QD layer traps holes and acts as a positively charged nano-floating gate after a brief optical illumination, while it acts as a negatively charged nano-floating gate and depletes the adjacent channel when charged by the electrons. The NDR suggests a promising application in memory or high-speed logic devices for the QDFET structure.

Topological objects in the O(3) nonlinear sigma model

We study the topological defects in the nonlinear O(3) sigma model in terms of the decomposition of U(1) gauge potential. Time-dependent baby skyrmions are discussed in the (2 + 1)-dimensional spacetime with the CP1 field. Furthermore, we show that there are three kinds of topological defects-vortex lines, point defects and knot exist in the (3 + 1)-dimensional model, and their topological charges, locations and motions are determined by the phi-mapping topological current theory.

Topological objects in two-gap superconductor

We discuss the non-Abelian topological objects, in particular the non-Abrikosov vortex and the magnetic knot made of the twisted non-Abrikosov vortex, in two-gap superconductor. We show that there are two types of non-Abrikosov vortex in Ginzburg-Landau theory of two-gap superconductor, the D-type which has no concentration of the condensate at the core and the N-type which has a non-trivial profile of the condensate at the core, under a wide class of realistic interaction potential. We prove that these non-Abrikosov vortices can have either integral or fractional magnetic flux, depending on the interaction potential. We show that they are described by the non-Abelian topology pi(2)(S-2) and pi(1)(S-1), in addition to the well-known Abelian topology pi(1)(S-1). Furthermore, we discuss the possibility to construct a stable magnetic knot in two-gap superconductor by twisting the non-Abrikosov vortex and connecting two periodic ends together, whose knot topology pi(3)(S-2) is described by the Chern-Simon index of the electromagnetic potential. We argue that similar topological objects may exist in multi-gap or multi-layer superconductors and multi-component Bose-Einstein condensates and superfluids, and discuss how these topological objects can be constructed in MgB2, Sr2RuO4, He-3, and liquid metallic hydrogen.