997 resultados para semiconduttori, fotovoltaico, silicio amorfo, silicon oxynitride, ottica


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Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T07:40:23Z No. of bitstreams: 1 Reconfigurable Optical Add-Drop Multiplexer Based on Silicon Photonic Wire Waveguide.pdf: 416355 bytes, checksum: 5b80992194ba9fa818a011244cec6363 (MD5)

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Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T07:55:26Z No. of bitstreams: 1 Diffractive Grating Based Out-of-Plane Coupling between Silicon Nanowire and Optical Fiber.pdf: 232805 bytes, checksum: 0bd17756b8a703bf8337dd25bbddaca3 (MD5)

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Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:02:20Z No. of bitstreams: 1 Design and Simulation Analysis of Spot-Size Converter in Silicon-On-Insulator.pdf: 239163 bytes, checksum: 82db1386c266d0c07442a972348da08c (MD5)

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Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-06-04T08:08:51Z No. of bitstreams: 1 High-Q and High-extinction-ratio Microdisk Add-drop Filter with Grating Couplers in Silicon-on-Insulator.pdf: 662474 bytes, checksum: dbdd3fba410c875bd74a6d4823930a44 (MD5)

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Microcrystalline silicon films were deposited by very high frequency (VHF) plasma-enhanced chemical vapor deposition (PECVD) with different hydrogen dilution. The microstructure of these films was investigated using Raman spectroscopy and infrared absorption (IR) spectra. The crystalline, amorphous, and grain boundary volume fractions X-c, X-a and X-gb were estimated from Raman measurements. An interface structure factor (R-if) is proposed to characterize the grain boundary volume fractions in IR spectroscopy. The density of states (DOS) of the microcrystalline crystalline silicon films were studied by phase-shift analysis of modulated photocurrent (MPC) and photoconductivity spectroscopy. It was observed that DOS increases with increasing grain boundary volume fractions, while the values of electron mobility-lifetime product mu T-e(e) disease.

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Si thin films with different structures were deposited by plasma enhanced chemical vapor deposition (PECVD), and characterized via Raman spectroscopy and Fourier transform infrared (FTIR) spectroscopy. The passivation effect of such different Si thin films on crystalline Si surface was investigated by minority carrier lifetime measurement via a method, called microwave photoconductive decay (mu PCD), for the application in HIT (heterojunction with intrinsic thin-layer) solar cells. The results show that amorphous silicon (a-Si:H) has a better passivation effect due to its relative higher H content, compared with microcrystalline (mu c-Si) silicon and nanocrystalline silicon (nc-Si). Further, it was found that H atoms in the form of Si-H bonds are more preferred than those in the form of Si-H-2 bonds to passivate the crystalline Si surface. (C) 2009 Elsevier B.V. All rights reserved.

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Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-04-04T06:57:43Z No. of bitstreams: 1 71.pdf: 92858 bytes, checksum: 2a0a4972af8e56b0fced818042dd6dbd (MD5)

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We investigate the dispersion properties of nanometer-scaled silicon waveguides with channel and rib cross section around the optical fiber communication wavelength and systematically study their relationship with the key structural parameters of the waveguide. The simulation results show that the introduction of an extra degree of freedom in the rib depth enables the rib waveguide more flexible in engineering the group velocity dispersion (GVD) compared with the channel waveguide. Besides, we get the structural parameters of the waveguides that can realize zero-GVD at 1550 nm.

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High quality silicon nanowires (SiNWs) were grown directly from n-(111) silicon single crystal substrate by using Au film as a metallic catalyst. The diameter and length of the formed nanowires are 30-60 nm and from several micrometers to sereral tens of micrometers, respectively. The effects of Au film thickness, annealing temperature, growth time and N-2 gas flow rate on the formation of the nanowires were experimentally investigated. The results confirmed that the silicon nanowires with controlled diameter, length, shape and orientation can be obtained via reasonably choosing and optimizing various technical conditions. The formation process of the silicon nanowires is analyzed qualitatively based on solid-liquid-solid growth mechanism.

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Silicon nanowires (SiNWs) were grown directly from n-(111) single-crystal silicon (c-Si) substrate based on a solid-liquid-solid mechanism, and Au film was used as a metallic catalyst. The room temperature photoluminescence properties of SiNWs were observed by an Xe lamp with an exciting wavelength of 350 nm. The results show that the SiNWs exhibit a strongly blue luminescent band in the wavelength range 400-480 nm at an emission peak position of 420 nm. The luminescent mechanism of SiNWs indicates that the blue luminescence is attributed to the oxygen-related defects, which are in SiOx amorphous oxide shells around the crystalline core of SiNWs.

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The typical MEMS fabrication of micro evaporators ensures the perfect smooth wall surface that is lack of nucleation sites, significantly decreasing the heat transfer coefficients compared with miniature evaporators fabricated using copper or stainless steel. In the present paper, we performed the boiling heat transfer experiment in silicon triangular microchannel heat sink over a wide parameter range for 102 runs. Acetone was used as the working fluid. The measured boiling heat transfer coefficients versus the local vapor mass qualities are compared with the classical Chen’s correlation and other correlations for macro and miniature capillary tubes. It is found that most of these correlations significantly over-predict the measured heat transfer coefficients. New correlations are given. There are many reasons for such deviations. The major reason is coming from the perfect smooth silicon surface that lowers the heat transfer performances. New theory is recommended for the silicon microchannel heat sink that should be different from metallic capillary tubes.