GeO2 : Bi, M (M = Ga, B) glasses with super-wide infrared luminescence

Broadband infrared luminescence covering the optical telecommunication wavelength region of 0, E and S bands was observed in GeO2: Bi, M (M = Ga, B) glasses prepared by conventional melting-quenching technique. The luminescence with a maximum at around 1320 nm possesses a full width at half maximum larger than 300 nm and mean fluorescent lifetime longer than 500 mus when excited by an 808 nm-laser. These glasses may have potential applications in widely tunable laser and super-broadband optical amplifier for the optical communications. (C) 2005 Elsevier B.V. All rights reserved.

Investigations on bismuth and aluminum co-doped germanium oxide glasses for ultra-broadband optical amplification

The broadband luminescence covering 1.2-1.6 mu m was observed from bismuth and aluminum co-doped germanium oxide glasses pumped by 808 nm laser at room temperature. The spectroscopic properties of GeO2:Bi,Al glasses strongly depend on the glass compositions and the pumping sources. To a certain extent, the Al3+ ions play as dispersing reagent for the infrared-emission centers in the GeO2:Bi,Al glasses. The broad infrared luminescence with a full width at half maximum larger than 200 nm and a lifetime longer than 200 mu s possesses these glasses with the potential applications in broadly tunable laser sources and ultra-broadband fiber amplifiers in optical communication field. (c) 2005 Elsevier B.V. All rights reserved.

Superbroadband 1310 nm emission from bismuth and tantalum codoped germanium oxide glasses

Near-infrared broadband emission from bismuth-tantalum-codoped germanium oxide glasses was observed at room temperature when the glasses were pumped by an 808 nm laser diode. The emission band covered the 0, E, S, C, and L bands (1260-1625 nm), with a maximum peak at similar to 1310 nm, a FWHM broader than 400 nm, and a lifetime longer than 200 lis. The observed broadband luminescence was attributed to bismuth clusters in the glasses. Bismuth-tantalum-codoped germanium oxide glass might be promising as amplification media for broadly tunable lasers and wideband amplifiers in optical communications. (c) 2005 Optical Society of America.

MOCVD growth and properties of ZnO thin films on LiNbO3 substrates

ZnO thin films were grown on (0001)LiNbO3 substrates by the MOCVD technique. The substrate temperatures during growth were changed from 400 to 600 degrees C. The X-ray diffraction (XRD) pattern of the ZnO film showed a strong [002] reflection peak, and the peak intensity was dependent on substrate temperature. The ZnO columnar grains were highly oriented along the (002) direction when the film processing temperature was 600 degrees C. The optical transmission and PL results also indicated that highest crystalline quality of the ZnO films could be obtained at elevated temperatures. (c) 2005 Elsevier B.V. All rights reserved.

Annealing effect on properties of ZnO thin films grown on LiNbO3 substrates by MOCVD

ZnO films were grown on (0 0 0 1) LiNbO3 substrates by metal organic chemical vapor deposition (MOCVD). Annealing of ZnO films was performed in air for I h at 800 degrees C. The effects of annealing on the structural and optical properties of ZnO thin films on LiNbO3 substrates were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. XRD patterns and AFM showed that the as-grown and the annealed ZnO films grown on LiNbO3 substrates had c-axis preferential orientation, the crystallinity of the ZnO films grown on LiNbO3 Substrates was improved, and the grain size increased by annealing. The PL spectra showed that the intensity of the UV near-band-edge peak was increased after annealing, while the intensity of visible peak (deep-level emission) decreased. (c) 2005 Elsevier B.V. All rights reserved.

Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

Optical properties of ZnO thin film on gamma-LiAlO2 substrate grown by pulsed laser deposition

Optical properties were investigated of ZnO thin films grown oil (100) gamma-LiAlO2 (LAO) substrates by pulsed laser deposition method. C-axis oriented ZnO film was grown oil (100) LAO substrate at the substrate temperature of 550 degrees C. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. Photoluminescence spectra were observed at room temperature; the peak at 550 urn is ascribed to oxygen vacancies in the ZnO films caused by the diffusion of Li from the substrate into the film during deposition. (c) 2005 Elsevier B.V. All rights reserved.

Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied. (c) 2006 American Institute of Physics.

辅助水热法制备不同形貌的柱状ZnO微晶(英文)

本文采用乙醇辅助水热法制备得到了柱状ZnO微晶。得到的微晶形貌多样，有单脚、三脚、四脚、五脚、六脚以及多脚状，并以“骨架＋支架”模型进行解释。X射线衍射分析结果表明产物为纯的六方相纤锌矿结构，扫描电子显微镜（SEM）观察表明产物具有单晶属性。本文还研究了ZnO的室温光谱性能。

高度C轴取向的ZnO膜的低温水热法制备

在预先镀有ZnO纳米层的（0001）蓝宝石衬底上利用低温水热法制备出ZnO薄膜。SEM和XRD显示此ZnO膜是由六棱柱状阵列构成的，基于蓝宝石衬底生长，具有高度的c轴择优取向，且（0004）摇摆曲线的FWHM达到1．8°。并发现了在水热溶液中加入一定量六次甲基四胺可以调节六棱柱状ZnO尺寸比例。

Comparison of ZnO films grown on before- and after-vapor transport equilibration (VTE) LiAlO2 substrates by pulsed laser deposition (PLD)

About Phi 45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition (PLD). It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.

柱状ZnO阵列薄膜的生长及其发光特性

采用一种设备简单、原料低廉的新型方法，在镀有ZnO先驱薄膜的（0001）蓝宝石上利用水热法制备出了柱状ZnO阵列薄膜．用扫描电镜（SEM），X射线衍射（XRD）对样品的形貌和结构进行了表征，结果显示ZnO薄膜为柱状阵列，基于蓝宝石衬底沿c轴择优生长，且（0004）摇摆曲线半高宽度（FWHM）约为1.8°。此ZnO阵列薄膜具有很强的紫外发射光谱（PL）．

High quantum efficiency and high concentration erbium-doped silica glasses fabricated by sintering nanoporous glasses

A new method was used to prepare erbium-doped high silica (SiO2% > 96%) glasses by sintering nanoporous glasses. The concentration of erbium ions in high silica glasses can be considerably more than that in silica glasses prepared by using conventional methods. The fluorescence of 1532 nm has an FWHM (Full Wave at Half Maximum) of 50 nm, wider than 35 nm of EDSFA (erbium-doped silica fiber amplifer), and hence the glass possesses potential application in broadband fiber amplifiers. The Judd-Ofelt theoretical analysis reflects that the quantum efficiency of this erbium-doped glass is about 0.78, although the erbium concentration in this glass (6 x 103) is about twenty times higher than that in silica glass. These excellent characteristics of Er-doped high silica glass will be conducive to its usage in optical amplifiers and microchip lasers.

Structural, optical and electrical properties of ZnO films grown on c-plane sapphire and (100)gamma-LiAlO2 by pulse laser deposition

ZnO thin films were grown on single-crystal gamma-LiAlO2 (LAO) and sapphire (0001) substrate by pulsed laser deposition (PLD). The structural, optical and electrical properties of ZnO films were investigated. The results show that LAO is more suitable for fabricating ZnO films than sapphire substrate and the highest-quality ZnO film was attained on LAO at the substrate temperature of 550 degrees C. However, when the substrate temperature rises to 700 degrees C, lithium would diffuse from the substrate (LAO) into ZnO film which makes ZnO film on LAO becomes polycrystalline without preferred orientation, the stress in ZnO film increases dominantly and the resistivity of the film decreases exponentially. (c) 2005 Elsevier B.V. All rights reserved.