Scan cell reordering to minimize peak power during test cycle: A graph theoretic approach

Scan circuit is widely practiced DFT technology. The scan testing procedure consist of state initialization, test application, response capture and observation process. During the state initialization process the scan vectors are shifted into the scan cells and simultaneously the responses captured in last cycle are shifted out. During this shift operation the transitions that arise in the scan cells are propagated to the combinational circuit, which inturn create many more toggling activities in the combinational block and hence increases the dynamic power consumption. The dynamic power consumed during scan shift operation is much more higher than that of normal mode operation.

A Simulation Based Study and Analysis of Double Gate Tunnel FET Performance for Low Stand-By Power Applications

The conventional metal oxide semiconductor field effect transistor (MOSFET)may not be suitable for future low standby power (LSTP) applications due to its high off-state current as the sub-threshold swing is theoretically limited to 60mV/decade. Tunnel field effect transistor (TFET) based on gate controlled band to band tunneling has attracted attention for such applications due to its extremely small sub-threshold swing (much less than 60mV/decade). This paper takes a simulation approach to gain some insight into its electrostatics and the carrier transport mechanism. Using 2D device simulations, a thorough study and analysis of the electrical parameters of the planar double gate TFET is performed. Due to excellent sub-threshold characteristics and a reverse biased structure, it offers orders of magnitude less leakage current compared to the conventional MOSFET. In this work, it is shown that the device can be scaled down to channel lengths as small as 30 nm without affecting its performance. Also, it is observed that the bulk region of the device plays a major role in determining the sub-threshold characteristics of the device and considerable improvement in performance (in terms of ION/IOFF ratio) can be achieved if the thickness of the device is reduced. An ION/IOFF ratio of 2x1012 and a minimum point sub-threshold swing of 22mV/decade is obtained.

Power control and transmission scheduling for network utility maximization in wireless networks

We consider a joint power control and transmission scheduling problem in wireless networks with average power constraints. While the capacity region of a wireless network is convex, a characterization of this region is a hard problem. We formulate a network utility optimization problem involving time-sharing across different "transmission modes," where each mode corresponds to the set of power levels used in the network. The structure of the optimal solution is a time-sharing across a small set of such modes. We use this structure to develop an efficient heuristic approach to finding a suboptimal solution through column generation iterations. This heuristic approach converges quite fast in simulations, and provides a tool for wireless network planning.

Process Variation Aware Estimation of Static Leakage Power in Nano-CMOS

We present a statistical methodology for leakage power estimation, due to subthreshold and gate tunneling leakage, in the presence of process variations, for 65 nm CMOS. The circuit leakage power variations is analyzed by Monte Carlo (MC) simulations, by characterizing NAND gate library. A statistical “hybrid model” is proposed, to extend this methodology to a generic library. We demonstrate that hybrid model based statistical design results in up to 95% improvement in the prediction of worst to best corner leakage spread, with an error of less than 0.5%, with respect to worst case design.

On the Limits of Spatial Reuse and Cooperative Communication for Dense Wireless Networks

We consider a dense ad hoc wireless network comprising n nodes confined to a given two dimensional region of fixed area. For the Gupta-Kumar random traffic model and a realistic interference and path loss model (i.e., the channel power gains are bounded above, and are bounded below by a strictly positive number), we study the scaling of the aggregate end-to-end throughput with respect to the network average power constraint, P macr, and the number of nodes, n. The network power constraint P macr is related to the per node power constraint, P macr, as P macr = np. For large P, we show that the throughput saturates as Theta(log(P macr)), irrespective of the number of nodes in the network. For moderate P, which can accommodate spatial reuse to improve end-to-end throughput, we observe that the amount of spatial reuse feasible in the network is limited by the diameter of the network. In fact, we observe that the end-to-end path loss in the network and the amount of spatial reuse feasible in the network are inversely proportional. This puts a restriction on the gains achievable using the cooperative communication techniques studied in and, as these rely on direct long distance communication over the network.

A Low Power Frequency Multiplication Technique for Zigbee Transceiver

A low-power frequency multiplication technique, developed for ZigBee (IEEE 802.15.4) like applications is presented. We have provided an estimate for the power consumption for a given output voltage swing using our technique. The advantages and disadvantages which determine the application areas of the technique are discussed. The issues related to design, layout and process variation are also addressed. Finally, a design is presented for operation in 2.405-2.485-GHz band of ZigBee receiver. SpectreRF simulations show 30% improvement in efficiency for our circuit with regard to conversion of DC bias current to output amplitude, against a LC-VCO. To establish the low-power credentials, we have compared our circuit with an existing technique; our circuit performs better with just 1/3 of total current from supply, and uses one inductor as against three in the latter case. A test chip was implemented in UMC 0.13-mum RF process with spiral on-chip inductors and MIM (metal-insulator-metal) capacitor option.