The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films

Dilute magnetic nonpolar GaN films with a Curie temperature above room temperature have been fabricated by implanting Mn ions into unintentionally doped nonpolar a-plane (1 1 (2) over bar 0) GaN films and a subsequent rapid thermal annealing (RTA) process. The impact of the implantation and RTA on the structure and morphology of the nonpolar GaN films is studied in this paper. The scanning electron microscopy analysis shows that the RTA process can effectively recover the implantation-indUced damage to the surface morphology of the sample. The X-ray diffraction and micro-Raman scattering spectroscopy analyses show that the RTA process can just partially recover the implantation-induced crystal deterioration. Therefore, the quality of the Mn-implanted nonpolar GaN films should be improved further for the application in spintronic devices. (C) 2009 Elsevier B.V. All rights reserved.

Formation of InAs quantum dots on low-temperature GaAs epi-layer

InAs self-organized quantum dots (QDs) grown on annealed low-temperature GaAs (LT-GaAs) epi-layers and on normal temperature GaAs buffer layers have been compared by transmission electron microscopy (TEM) and photoluminescence (PL) measurements. TEM evidences that self-organized QDs were formed with a smaller size and larger density than that on normal GaAs buffer layers. It is discussed that local tensile surface strain regions that are preferred sites for InAs islands nucleation are increased in the case of the LT-GaAs buffer layers due to exhibiting As precipitates. The PL spectra show a blue-shifted peak energy with narrower linewidth revealing the improvement of optical properties of the QDs grown on LT-GaAs epi-layers. It suggests us a new way to improve the uniformity and change the energy band structure of the InAs self-organized QDs by carefully controlling the surface stress states of the LT-GaAs buffers on which the QDs are formed. (C) 2000 Elsevier Science B.V. All rights reserved.

Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution

In this work we report the optical and microscopic properties of self-organized InAs/GaAs quantum dots grown by molecular beam epitaxy on (1 0 0) oriented GaAs substrates. A distinctive double-peak feature of the PL spectra from quantum dots has been observed, and a bimodal distribution of dot sizes has also been confirmed by scanning tunneling microscopy (STM) image for uncapped sample. The power-dependent photoluminescence (PL) study demonstrates that the distinctive PL emission peaks are associated with the ground-state emission of islands in different size branches. The temperature-dependent PL study shows that the PL quenching temperature for different dot families is different. It is shown that the coupling between quantum dots plays a key role in unusual temperature dependence of QD photoluminescence. In addition, we have tuned the emission wavelength of InAs QDs to 1.3 mu m at room temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy

A series of superlattices delta-GaNxAs1-x/GaAs were grown by a DC plasma-N-2-assisted molecular beam epitaxy. The evolution of the surface reconstruction during the growth has been studied with the use of in situ reflection high-energy electron diffraction. The superlattices have been characterized by high-resolution X-ray diffraction measurements. Distinct satellite peaks indicate that the superlattices are of good quality. The N compositions in strained GaNxAs1-x monolayers are obtained from the dynamical simulations of the measured X-ray diffraction patterns. The periodicity fluctuations of N composition are obtained from a kinematical method dependent on the broadening of the satellite peaks of the X-ray diffraction. (C) 2000 Elsevier Science B.V. All rights reserved.

Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy

Self-ordering of quasi-quantum wires in multilayer InAlAs/AlGaAs nanostructures grown by molecular beam epitaxy is identified. The chain-like structures along the [1 (1) over bar 0] Of direction formed by coalescence of quantum dots were observed. The photoluminescence of the nanostructures is partially polarized along the [1 (1) over bar 0] direction. The polarization ratio depends on the wavelength and the maximum polarization is on the lower energy side. The maximum polarization increases from 0.32 at 10 K to 0.53 at 100 K, and the energy position of maximum polarization moves near to PL peak with increasing temperature. They are all related to the existence of isolated islands and quasi-quantum wires in our sample. This result provides a novel approach to produce narrow quantum wires. (C) 2000 Elsevier Science B.V. All rights reserved.

Pulsed excimer laser annealing of Mg-doped cubic GaN

A KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing (PLA) on Mg-doped cubic GaN alms. The laser-induced changes were monitored by photoluminescence (PL) measurement. It indicated that deep levels in as-grown cubic GaN : Mg films were neutralized by H and PLA treatment could break Mg-H-N complex. The evolution of emissions around 426 and 468 nm with different PLA conditions reflected the different activation of the involved deep levels. Rapid thermal annealing (RTA) in N-2 atmosphere reverts the luminescence of laser annealed samples to that of the pre-annealing state. The reason is that most H atoms still remained in the epilayers after PLA due to the short duration of the pulses and reoccupied the original locations during RTA. (C) 2000 Elsevier Science B.V. All rights reserved. PACS: 61.72.Vv; 61.72.Cc; 18.55. -m.

A wide-band front-end for terrestrial and cable receptions

In this paper, a wide-band low noise amplifier, two mixers and a VCO with its buffers implemented in 50GHz 0.35 mu m SiGe BiCMOS technology for dual-conversion digital TV tuner front-end is presented. The LNA and up-converting mixer utilizes current injection technology to achieve high linearity. Without using inductors, the LNA achieves 0.1-1GHz wide bandwidth and 18.8-dB gain with less than 1.4-dB gain variation. The noise figure of the LNA is less than 5dB and its 1dB compression point is -2 dBm. The IIP3 of two mixers is 25-dBm. The measurement results show that the VCO has -127.27-dBc/Hz phase noise at 1-MHz offset and a linear gain of 32.4-MHz/V between 990-MHz and 1.14-GHz. The whole chip consume 253mW power with 5-V supply.

A novel DC-DC charge pump circuit for passive RFID transponder

This paper presents a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies. The proposed charge pump has been used as a part of the power supply section of fully integrated passive radio frequency identification(RFID) transponder IC, which has been implemented in a 0.35-um CMOS technology with embedded EEPROM offered by Chartered Semiconductor. The proposed DC/DC charge pump can generate stable output for RFID applications with low power dissipation and high pumping efficiency. The analytical model of the voltage multiplier, the comparison with other charge pumps, the simulation results, and the chip testing results are presented.

基于形象化标签推荐技术的聋儿康复资源系统

针对目前教育、教学资源系统中存在的问题,在以用户为中心的场景设计方法指导下,提出了简单、易学、易用和高效4个层次递进的系统设计开发目标,并重点分析研究了Web2.0的个性化服务:标签和推荐服务。结合这两种服务的优势,在提出和实现形象化标签推荐技术后,阐述了其设计与实现。结合聋儿康复资源系统的设计与开发,详细地介绍了整个系统的功能框架、实现流程以及形象化标签在系统中的运用。最后对全文进行了总结,并对下一步研究工作做出了展望。

数据挖掘技术在产品相似性上的应用研究

市场细分导致的产品多样化使预测与计划更加困难,而相似性产品的确定可以改善库存结构,促进销售的增长。文章在论述数据库设计和基础数据准备的基础上,提出了三种方法用于确定相似性产品,并给出了实例,最后作了比较分析。

回转窑热解处理废锌锰电池试验研究

我国电池生产量已经达到209亿节（2003年），多年来一直占据世界第一大电池生产国的地位，其中锌锰电池占大多数。废锌锰电池丢弃后，其中的重金属物质会逐渐渗透到地下，污染土壤和水体。重金属在生物体内富集，会使生物体致畸或致变。但同时，废锌锰电池中也含有大量有用的资源如锌、二氧化锰等。应对其进行回收利用，变废为宝。本文介绍了废锌锰电池回收处理的主要技术及研究进展，不同的处理技术回收废锌锰电池时的目标产物各不相同，但一般可分为以下几种：以单质形式回收锌、锰和汞；以合金的形式回收锌和锰；回收锌和二氧化锰；回收各金属元素制备复合微量元素肥料；回收锌、锰元素制备锰锌铁氧体；回收锌、锰元素制备硫酸锌和碳酸锰等。本文对一些废锌锰电池回收处理技术的优缺点从无害化程度、资源化程度、产品等级、工艺要求以及二次污染五个方面进行了分析和比较。在对国内外废锌锰电池回收处理技术进行分析比较的基础上提出了一种成本较低、可操作性较强的处理技术：先以干法除去废锌锰电池中的汞，然后以湿法除去其它的有害重金属并进一步加工制备有机螯合微量元素肥料。 本文以回转窑中物料停留时间的经验公式和传热学的知识设计和计算了回转窑的长度和内径尺寸、电热丝的功率以及外围的保温材料厚度等参数。用保温材料和润滑油相结合的方式对回转窑的连接部分实行密封。通过调整回转窑的转速和回转窑支架两端高度差的方式控制物料在回转窑中的停留时间，从而调节热解时间的长短。利用自动控制设备调节电热丝的功率从而调节试验中的热解温度。利用该回转窑在不同条件下对热解处理废锌锰电池进行了试验研究，热解过程中产生的尾气和颗粒物用一系列吸收液进行吸收和固定。 在热解试验中改变影响热解过程的三种因素：热解温度、热解时间和载气流速并按三因素四水平的正交方法安排试验。改变废锌锰电池热解过程中的热解温度、热解时间和载气流速三种因素进行正交试验并利用正交统计学的方法分析了这三种因素对热解除汞率的影响。利用ICP检测仪测定了各吸收液中汞的含量，并分析热解气体产物经过系列吸收液时汞被吸收的情况以及汞的形态分布。利用气相色谱仪对尾气成分进行了测定，并对热解过程中产气的过程和规律进行了分析。用X射线衍射测试的方法研究了热解前后锌锰电池的物质形态变化情况。对除汞率的正交统计分析表明，合适的热解条件为：热解温度690℃，热解时间100min，载气流速0.06m3/h，在这种试验条件下热解处理废锌锰电池的除汞率达到100%。同时还得到：热解时间对除汞效果影响最大，热解温度次之，载气流速的影响较小。ICP测试的结果表明：热解尾气在经过试验中设置的吸收瓶后，其中的汞被完全吸收，尾气中95%以上的汞以单质的形式存在。气相色谱分析的结果表明，热解开始后，废锌锰电池中的有机质迅速分解，其产物为C2H4、CH4和H2等。一段时间后，有机质的分解量大幅度减少，同时废电池中的石墨碳和高价金属氧化物发生氧化还原反应，生成CO气体。对废锌锰电池原料以及热解残渣的X射线衍射分析表明，当热解温度为350℃时，X射线衍射图谱上2θ值为35°附近的区域有新峰出现，但不明显，说明有结晶体形成但量不大。500℃时上述峰明显增强，这是由于ZnO和FeO形成了结晶体，同时在2θ值为41°附近有新峰出现，这是高价锰氧化物与石墨碳发生氧化还原反应生成了MnO并形成了结晶体。650℃时，2θ值在41°附近的峰显著增强，且热解过程中形成的峰稳定下来，基本上不再有新的结晶体生成。热解后，高价锰氧化物的相对含量从32.2%下降到4.6%，而MnO的相对含量则从6.4%上升到38.6%。热解后的残渣中晶体物质含量大，金属元素大多以低价态存在，适合于制备有机螯合微量元素肥料。