Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy
Data(s) |
2000
|
---|---|
Resumo |
Self-ordering of quasi-quantum wires in multilayer InAlAs/AlGaAs nanostructures grown by molecular beam epitaxy is identified. The chain-like structures along the [1 (1) over bar 0] Of direction formed by coalescence of quantum dots were observed. The photoluminescence of the nanostructures is partially polarized along the [1 (1) over bar 0] direction. The polarization ratio depends on the wavelength and the maximum polarization is on the lower energy side. The maximum polarization increases from 0.32 at 10 K to 0.53 at 100 K, and the energy position of maximum polarization moves near to PL peak with increasing temperature. They are all related to the existence of isolated islands and quasi-quantum wires in our sample. This result provides a novel approach to produce narrow quantum wires. (C) 2000 Elsevier Science B.V. All rights reserved. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Chen Y; Li GH; Zhang W; Zhu ZM; Han HX; Wang ZP; Zhou W; Wang ZG .Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy ,JOURNAL OF CRYSTAL GROWTH,2000,209(4):994-998 |
Palavras-Chave | #半导体材料 #quantum wire #polarization #photoluminescence #DOTS #TEMPERATURE #CONFINEMENT #PHOTOLUMINESCENCE #ARRAY #GAAS |
Tipo |
期刊论文 |