Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy


Autoria(s): Chen Y; Li GH; Zhang W; Zhu ZM; Han HX; Wang ZP; Zhou W; Wang ZG
Data(s)

2000

Resumo

Self-ordering of quasi-quantum wires in multilayer InAlAs/AlGaAs nanostructures grown by molecular beam epitaxy is identified. The chain-like structures along the [1 (1) over bar 0] Of direction formed by coalescence of quantum dots were observed. The photoluminescence of the nanostructures is partially polarized along the [1 (1) over bar 0] direction. The polarization ratio depends on the wavelength and the maximum polarization is on the lower energy side. The maximum polarization increases from 0.32 at 10 K to 0.53 at 100 K, and the energy position of maximum polarization moves near to PL peak with increasing temperature. They are all related to the existence of isolated islands and quasi-quantum wires in our sample. This result provides a novel approach to produce narrow quantum wires. (C) 2000 Elsevier Science B.V. All rights reserved.

Identificador

http://ir.semi.ac.cn/handle/172111/12690

http://www.irgrid.ac.cn/handle/1471x/65315

Idioma(s)

英语

Fonte

Chen Y; Li GH; Zhang W; Zhu ZM; Han HX; Wang ZP; Zhou W; Wang ZG .Self-ordering of quasi-quantum wire in InAlAs/AlGaAs multilayer nanostructure and its optical anisotropy ,JOURNAL OF CRYSTAL GROWTH,2000,209(4):994-998

Palavras-Chave #半导体材料 #quantum wire #polarization #photoluminescence #DOTS #TEMPERATURE #CONFINEMENT #PHOTOLUMINESCENCE #ARRAY #GAAS
Tipo

期刊论文