Design and development of distributed feedback transistor lasers

The transistor laser is a unique three-port device that operates simultaneously as a transistor and a laser. With quantum wells incorporated in the base regions of heterojunction bipolar transistors, the transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and electrical-optical characteristics for direct “read-out” of its optical properties. These devices have demonstrated many useful features such as high-speed optical transmission without the limitations of resonance, non-linear mixing, frequency multiplication, negative resistance, and photon-assisted switching. To date, all of these devices operate as multi-mode lasers without any type of wavelength selection or stabilizing mechanisms. Stable single-mode distributed feedback diode laser sources are important in many applications including spectroscopy, as pump sources for amplifiers and solid-state lasers, for use in coherent communication systems, and now as TLs potentially for integrated optoelectronics. The subject of this work is to expand the future applications of the transistor laser by demonstrating the theoretical background, process development and device design necessary to achieve singlelongitudinal- mode operation in a three-port transistor laser. A third-order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength of 959.75 nm and threshold current of 13 mA operating at -70 °C. For devices with cleaved ends a side-mode suppression ratio greater than 25 dB has been achieved.

Measurement of finite-frequency current statistics in a single-electron transistor

Electron transport in nanoscale structures is strongly influenced by the Coulomb interaction that gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete understanding of the underlying physical processes requires measurements of the electrical fluctuations on all time and frequency scales, but experiments have so far been restricted to fixed frequency ranges, as broadband detection of current fluctuations is an inherently difficult experimental procedure. Here we demonstrate that the electrical fluctuations in a single-electron transistor can be accurately measured on all relevant frequencies using a nearby quantum point contact for on-chip real-time detection of the current pulses in the single-electron device. We have directly measured the frequency-dependent current statistics and, hereby, fully characterized the fundamental tunnelling processes in the single-electron transistor. Our experiment paves the way for future investigations of interaction and coherence-induced correlation effects in quantum transport.

A III-V channel field effect transistor for non-classical CMOS: process optimisation for improved gate stack function

This thesis describes a collection of studies into the electrical response of a III-V MOS stack comprising metal/GaGdO/GaAs layers as a function of fabrication process variables and the findings of those studies. As a result of this work, areas of improvement in the gate process module of a III-V heterostructure MOSFET were identified. Compared to traditional bulk silicon MOSFET design, one featuring a III-V channel heterostructure with a high-dielectric-constant oxide as the gate insulator provides numerous benefits, for example: the insulator can be made thicker for the same capacitance, the operating voltage can be made lower for the same current output, and improved output characteristics can be achieved without reducing the channel length further. It is known that transistors composed of III-V materials are most susceptible to damage induced by radiation and plasma processing. These devices utilise sub-10 nm gate dielectric films, which are prone to contamination, degradation and damage. Therefore, throughout the course of this work, process damage and contamination issues, as well as various techniques to mitigate or prevent those have been investigated through comparative studies of III-V MOS capacitors and transistors comprising various forms of metal gates, various thicknesses of GaGdO dielectric, and a number of GaAs-based semiconductor layer structures. Transistors which were fabricated before this work commenced, showed problems with threshold voltage control. Specifically, MOSFETs designed for normally-off (VTH > 0) operation exhibited below-zero threshold voltages. With the results obtained during this work, it was possible to gain an understanding of why the transistor threshold voltage shifts as the gate length decreases and of what pulls the threshold voltage downwards preventing normally-off device operation. Two main culprits for the negative VTH shift were found. The first was radiation damage induced by the gate metal deposition process, which can be prevented by slowing down the deposition rate. The second was the layer of gold added on top of platinum in the gate metal stack which reduces the effective work function of the whole gate due to its electronegativity properties. Since the device was designed for a platinum-only gate, this could explain the below zero VTH. This could be prevented either by using a platinum-only gate, or by matching the layer structure design and the actual gate metal used for the future devices. Post-metallisation thermal anneal was shown to mitigate both these effects. However, if post-metallisation annealing is used, care should be taken to ensure it is performed before the ohmic contacts are formed as the thermal treatment was shown to degrade the source/drain contacts. In addition, the programme of studies this thesis describes, also found that if the gate contact is deposited before the source/drain contacts, it causes a shift in threshold voltage towards negative values as the gate length decreases, because the ohmic contact anneal process affects the properties of the underlying material differently depending on whether it is covered with the gate metal or not. In terms of surface contamination; this work found that it causes device-to-device parameter variation, and a plasma clean is therefore essential. This work also demonstrated that the parasitic capacitances in the system, namely the contact periphery dependent gate-ohmic capacitance, plays a significant role in the total gate capacitance. This is true to such an extent that reducing the distance between the gate and the source/drain ohmic contacts in the device would help with shifting the threshold voltages closely towards the designed values. The findings made available by the collection of experiments performed for this work have two major applications. Firstly, these findings provide useful data in the study of the possible phenomena taking place inside the metal/GaGdO/GaAs layers and interfaces as the result of chemical processes applied to it. In addition, these findings allow recommendations as to how to best approach fabrication of devices utilising these layers.

Lattice pulling effect and strain relaxation in axial (In, Ga)N/GaN nanowire heterostructures grown on GaN-buffered Si(111) substrate

Transmission electron microscopy and spatially resolved electron energy-loss spectroscopy have been applied to investigate the indium distribution and the interface morphology in axial (In,Ga)N/GaN nanowire heterostructures. The ordered axial (In,Ga)N/GaN nanowire heterostructures with an indium concentration up to 80% are grown by molecular beam epitaxy on GaN-buffered Si(111) substrates. We observed a pronounced lattice pulling effect in all the nanowire samples given in a broad transition region at the interface. The lattice pulling effect becomes smaller and the (In,Ga)N/GaN interface width is reduced as the indium concentration is increased in the (In,Ga)N section. The result can be interpreted in terms of the increased plastic strain relaxation via the generation of the misfit dislocations at the interface.

Caratterizzazione di transistor organici a effetto di campo come detector di raggi X

I semiconduttori organici sono alla base dell'elettronica organica, un campo di ricerca che negli ultimi anni ha coinvolto diversi gruppi di lavoro, sia a livello accademico che industriale. Diversi studi hanno portato all'idea di impiegare materiali di questo tipo come detector di raggi X, sfruttando la loro flessibilità meccanica, la facile fabbricazione di dispositivi su larga area e tramite tecniche a basso costo (es. stampa a getto di inchiostro) e le basse tensioni operative. In questa tesi in particolare si utilizzeranno degli OFET (Organic Field-Effect Transistor) a questo scopo, dimostrando la possibilità amplificare la sensibilità alla radiazione X e di pilotare le prestazioni del detector mediante l'applicazione della tensione all'elettrodo di gate. Presenteremo quindi uno studio sperimentale atto a caratterizzare elettricamente dei transistor realizzati con differenti semiconduttori organici, prima, durante e dopo l'esposizione a raggi X, in maniera da stimarne la sensibilità, le proprietà di conduzione intrinseche e la resistenza all'invecchiamento.

Funzionalizzazione e caratterizzazione di pigmenti organici per applicazioni in transistor a effetto di campo

Questo lavoro di tesi ha avuto come scopo la preparazione di film dei semiconduttori organici Indaco e Chinacridone con metodi da soluzione, che sono i preferiti per la fabbricazione di dispositivi. Per la caratterizzazione dei film si è utilizzata la microscopia Raman nell’intervallo dei numeri d’onda delle vibrazioni reticolari, per identificare la natura della fase cristallina presente. Indaco e Chinacridone sono pigmenti fortemente insolubili in tutti i solventi organici, a causa della presenza dei forti legami a ponte di idrogeno intermolecolari che ne influenzano notevolmente le proprietà di stato solido. Questo rende difficile l’ottenimento di film omogenei per deposizione diretta di loro soluzioni. Per ovviare al problema, si è utilizzata una strategia di letteratura, che passa attraverso la preparazione di loro derivati solubili, con una reazione di protezione dei gruppi amminici presenti sulle molecole con gruppi termolabili (tBoc). Una volta depositato su substrato, il pigmento originale può essere rigenerato per riscaldamento del film. L’analisi Raman ha permesso di caratterizzare strutturalmente per la prima volta i film preparati con questa procedura. In particolare si è verificato che sui film di Indaco è sempre presente il polimorfo B, in accordo con quanto trovato nei film preparati con metodi di deposizione da vapore. Per quanto riguarda il Chinacridone invece dell’attesa β, la fase ottenuta è la metastabile α’, ottenibile in fase bulk solo in condizioni drastiche. In entrambi in casi si conferma la selettività del substrato verso un polimorfo specifico.

Electrochemistry of polycyclic aromatic molecules for advanced carbon nanostructures: luminescence and transistor applications

Polycyclic aromatic hydrocarbons (PAHs) are a large class of π-conjugated organic molecules with fused aromatic rings, which can be considered as fragments of 2D-graphene and have been extensively studied for their unique optical and electronic properties. The aim of this study is to understand the complex electrochemical behaviour of planar, curved, and heteroatom doped polycyclic aromatic molecules, particularly focusing on the oxidative coupling of their radical cations and the electrochemically induced cyclodehydrogenation reactions. In the first part of this thesis, the class of PAHs and aromatic nanostructures are introduced, and the reactivity of electrogenerated species is discussed, focusing on the electrochemical approach for the synthesis of extended π-conjugated structures. Subsequently, the electrochemical properties and reactivity of electrogenerated radical ions of planar and curved polyaromatics are correlated to their structures. In the third chapter, electrochemical cyclodehydrogenation of hexaphenylbenzene is used to prepare self-assembled hexabenzocoronene, directly deposited on an interdigitated electrode, which was characterised as organic electrochemical transistor. In the fourth chapter, the electrochemical behaviour of a family of azapyrene derivatives has been carefully investigated together with the electrogenerated chemiluminescence (ECL), both by ion-annihilation and co-reactant methods. Two structural azapyrene isomers with different nitrogen positions are thoroughly discussed in terms of redox and ECL properties. Interestingly, the ECL of only one of them showed a double emission with excimer formation. A detailed mechanism is discussed for the ECL by co-reactant benzoyl peroxide, to rationalise the different ECL behaviours of the two isomers on the basis of their topologically modulated electronic properties. In conclusion, the different electrochemical behaviours of PAHs were shown, focussing on the chemical reactivity of the electrogenerated species and taking advantage of it for important processes spanning from unconventional synthesis methods for carbon nanostructures to the exploitation of self-assembled nanostructured systems in organic electronics, to novel organic emitters in ECL.

Fabbricazione e caratterizzazione di transistor organici a effetto di campo come rivelatori di radiazione X

I semiconduttori organici presentano un enorme potenziale nella realizzazione di dispositivi scalabili su larga area su substrati flessibili, e depositabili da soluzione con tecniche a basso costo, adatti alla rivelazione diretta di radiazione ionizzante. Nella seguente tesi sono descritti i processi di fabbricazione e analisi delle prestazioni di transistor organici a effetto di campo per la rivelazione diretta di raggi X. Questi sono stati realizzati utilizzando due diversi semiconduttori organici come materiali attivi, bis-(triisopropylsilylethynyl)-pentacene, in breve TIPS-pn, e un suo derivato, bis-(triisopropylgermylethynyl)-pentacene, in breve TIPG-pn. Sono in particolare descritte la deposizione del semiconduttore organico, la caratterizzazione elettrica dei transistor fabbricati, con estrapolazione dei parametri di trasporto caratteristici, e la loro risposta quando sottoposti a radiazione X. Sono infine confrontate le performance dei rivelatori, suddivise per materiale attivo.

Studio di parametri fondamentali di transistor elettrochimici organici microfabbricati

Questo elaborato tratta il ruolo dei transistor elettrochimici microfabbricati (OECTs) nel campo della Bioelettronica. Nello specifico, il focus della tesi ruota attorno alla categoria di OECTs basati su poli(3,4-etilenediossitiofene)(PEDOT) con drogaggio a base di poli(3,4-etilenediossitiofene)(PSS) a dare il PEDOT:PSS. Nella struttura del seguente elaborato, il primo capitolo è dedicato all’introduzione dei polimeri conduttori organici; materiali che hanno suscitato interesse grazie alle loro proprietà conduttive coniugate a un’alta stabilità, costi di produzione convenienti e alta riproducibilità; infine la biocompatibilità e le proprietà di trasduzione di informazioni attinenti al campo della biologia in segnale elettronico li ha resi lo strumento di maggior interesse nel campo della bioelettronica. Particolare focus è posto sulla categoria degli OECTs basati su PEDOT:PSS, sulle loro caratteristiche, la modellizzazione ed il ruolo del polimero d’interesse. Ciò è trattato nel secondo capitolo assieme ai regimi di funzionamento di questi dispositivi. Nel seguito si sono riportate le procedure seguite per la realizzazione dei dispositivi studiati: dalla preparazione del substrato ai processi litografici mirati alla creazione di un pattern per il circuito, fino alla deposizione per spin-coating del polimero in soluzione. Si sono descritti e chiariti il ruolo degli elementi del dispositivo, quali elettrodi ed elettrolita nella conducibilità del canale. Si è proceduto a descrive il set up strumentale e la strumentazione. Nell’ultimo capitolo si descrivono le misure sperimentali svolte e si commentano i risultati. Le misure svolte sul dispositivo constano innanzitutto della caratterizzazione dello stesso, previa analisi a vari voltaggi forniti sul gate e per varie geometrie del canale.

Extreme Harmonic Generation In Electrically Driven Spin Resonance.

We report the observation of multiple harmonic generation in electric dipole spin resonance in an InAs nanowire double quantum dot. The harmonics display a remarkable detuning dependence: near the interdot charge transition as many as eight harmonics are observed, while at large detunings we only observe the fundamental spin resonance condition. The detuning dependence indicates that the observed harmonics may be due to Landau-Zener transition dynamics at anticrossings in the energy level spectrum.

Low subthreshold slope in junctionless multigate transistors

The improvement of subthreshold slope due to impact ionization is compared between ""standard"" inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3358131]

Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot

A numerical renormalization-group study of the conductance through a quantum wire containing noninteracting electrons side-coupled to a quantum dot is reported. The temperature and the dot-energy dependence of the conductance are examined in the light of a recently derived linear mapping between the temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model of a quantum wire with an embedded quantum dot. Two conduction paths, one traversing the wire, the other a bypass through the quantum dot, are identified. A gate potential applied to the quantum wire is shown to control the current through the bypass. When the potential favors transport through the wire, the conductance in the Kondo regime rises from nearly zero at low temperatures to nearly ballistic at high temperatures. When it favors the dot, the pattern is reversed: the conductance decays from nearly ballistic to nearly zero. When comparable currents flow through the two channels, the conductance is nearly temperature independent in the Kondo regime, and Fano antiresonances in the fixed-temperature plots of the conductance as a function of the dot-energy signal interference between them. Throughout the Kondo regime and, at low temperatures, even in the mixed-valence regime, the numerical data are in excellent agreement with the universal mapping.

Harmonic Distortion of Unstrained and Strained FinFETs Operating in Saturation

The harmonic distortion (HD) exhibited by un-strained and biaxially strained fin-shaped field-effect transistors operating in saturation as single-transistor amplifiers has been investigated for devices with different channel lengths L and fin widths W(fin). The study has been performed through device characterization, 3-D device simulations, and modeling. Nonlinearity has been evaluated in terms of second- and third-order HDs (HD2 and HD3, respectively), and a discussion on its physical sources has been carried out. Also, the influence of the open-loop voltage gain AV in HD has been observed.

Trapezoidal SOI FinFET analog parameters` dependence on cross-section shape

The trapezium is often a better approximation for the FinFET cross-section shape, rather than the design-intended rectangle. The frequent width variations along the vertical direction, caused by the etching process that is used for fin definition, may imply in inclined sidewalls and the inclination angles can vary in a significant range. These geometric variations may cause some important changes in the device electrical characteristics. This work analyzes the influence of the FinFET sidewall inclination angle on some relevant parameters for analog design, such as threshold voltage, output conductance, transconductance, intrinsic voltage gain (A V), gate capacitance and unit-gain frequency, through 3D numeric simulation. The intrinsic gain is affected by alterations in transconductance and output conductance. The results show that both parameters depend on the shape, but in different ways. Transconductance depends mainly on the sidewall inclination angle and the fixed average fin width, whereas the output conductance depends mainly on the average fin width and is weakly dependent on the sidewall inclination angle. The simulation results also show that higher voltage gains are obtained for smaller average fin widths with inclination angles that correspond to inverted trapeziums, i.e. for shapes where the channel width is larger at the top than at the transistor base because of the higher attained transconductance. When the channel top is thinner than the base, the transconductance degradation affects the intrinsic voltage gain. The total gate capacitances also present behavior dependent on the sidewall angle, with higher values for inverted trapezium shapes and, as a consequence, lower unit-gain frequencies.

Threshold voltages of SOI MuGFETs

The multiple-gate field-effect transistor (MuGFET) is a device with a gate folded on different sides of the channel region. They are one of the most promising technological solutions to create high-performance ultra-scaled SOI CMOS. In this work, the behavior of the threshold voltage in double-gate, triple-gate and quadruple-gate SOI transistors with different channel doping concentrations is studied through three-dimensional numerical simulation. The results indicated that for double-gate transistors, one or two threshold voltages can be observed, depending on the channel doping concentration. However, in triple-gate and quadruple-gate it is possible to observe up to four threshold voltages due to the corner effect and the different doping concentration between the top and bottom of the Fin. (C) 2008 Elsevier Ltd. All rights reserved.