Harmonic Distortion of Unstrained and Strained FinFETs Operating in Saturation
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
|---|---|
| Data(s) |
18/10/2012
18/10/2012
2010
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| Resumo |
The harmonic distortion (HD) exhibited by un-strained and biaxially strained fin-shaped field-effect transistors operating in saturation as single-transistor amplifiers has been investigated for devices with different channel lengths L and fin widths W(fin). The study has been performed through device characterization, 3-D device simulations, and modeling. Nonlinearity has been evaluated in terms of second- and third-order HDs (HD2 and HD3, respectively), and a discussion on its physical sources has been carried out. Also, the influence of the open-loop voltage gain AV in HD has been observed. Fundacao de Apoio a Pesquisa do Estado de Sao Paulo (FAPESP) National Council for Scientific and Technological Development (CNPq) Consejo Nacional de Ciencia y Tecnologia[56461] |
| Identificador |
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, n.12, p.3303-3311, 2010 0018-9383 http://producao.usp.br/handle/BDPI/18613 10.1109/TED.2010.2079936 |
| Idioma(s) |
eng |
| Publicador |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Relação |
Ieee Transactions on Electron Devices |
| Direitos |
restrictedAccess Copyright IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Palavras-Chave | #Biaxial strain #distortion #fin-shaped field-effect transistor (FinFET) #silicon on insulator #single-transistor amplifier #ON-INSULATOR DEVICES #MOSFETS #MOBILITY #PERFORMANCE #CIRCUITS #MODEL #OTA #Engineering, Electrical & Electronic #Physics, Applied |
| Tipo |
article original article publishedVersion |
