Low subthreshold slope in junctionless multigate transistors
| Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
|---|---|
| Data(s) |
17/04/2012
17/04/2012
2010
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| Resumo |
The improvement of subthreshold slope due to impact ionization is compared between ""standard"" inversion-mode multigate silicon nanowire transistors and junctionless transistors. The length of the region over which impact ionization takes place, as well as the amplitude of the impact ionization rate are found to be larger in the junctionless devices, which reduces the drain voltage necessary to obtain a sharp subthreshold slope. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3358131] Science Foundation Ireland[05/IN/I888] |
| Identificador |
APPLIED PHYSICS LETTERS, v.96, n.10, 2010 0003-6951 http://producao.usp.br/handle/BDPI/14724 10.1063/1.3358131 |
| Idioma(s) |
eng |
| Publicador |
AMER INST PHYSICS |
| Relação |
Applied Physics Letters |
| Direitos |
openAccess Copyright AMER INST PHYSICS |
| Palavras-Chave | #IMPACT IONIZATION #SILICON #Physics, Applied |
| Tipo |
article original article publishedVersion |
