Universal zero-bias conductance through a quantum wire side-coupled to a quantum dot
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
19/04/2012
19/04/2012
2009
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Resumo |
A numerical renormalization-group study of the conductance through a quantum wire containing noninteracting electrons side-coupled to a quantum dot is reported. The temperature and the dot-energy dependence of the conductance are examined in the light of a recently derived linear mapping between the temperature-dependent conductance and the universal function describing the conductance for the symmetric Anderson model of a quantum wire with an embedded quantum dot. Two conduction paths, one traversing the wire, the other a bypass through the quantum dot, are identified. A gate potential applied to the quantum wire is shown to control the current through the bypass. When the potential favors transport through the wire, the conductance in the Kondo regime rises from nearly zero at low temperatures to nearly ballistic at high temperatures. When it favors the dot, the pattern is reversed: the conductance decays from nearly ballistic to nearly zero. When comparable currents flow through the two channels, the conductance is nearly temperature independent in the Kondo regime, and Fano antiresonances in the fixed-temperature plots of the conductance as a function of the dot-energy signal interference between them. Throughout the Kondo regime and, at low temperatures, even in the mixed-valence regime, the numerical data are in excellent agreement with the universal mapping. CNPq FAPESP |
Identificador |
PHYSICAL REVIEW B, v.80, n.23, 2009 1098-0121 http://producao.usp.br/handle/BDPI/16566 10.1103/PhysRevB.80.235318 |
Idioma(s) |
eng |
Publicador |
AMER PHYSICAL SOC |
Relação |
Physical Review B |
Direitos |
restrictedAccess Copyright AMER PHYSICAL SOC |
Palavras-Chave | #Anderson model #ballistic transport #electric admittance #electrical conductivity transitions #Kondo effect #mixed conductivity #mixed valence compounds #quantum dots #quantum wires #renormalisation #NUMERICAL RENORMALIZATION-GROUP #SINGLE-ELECTRON TRANSISTOR #DILUTE MAGNETIC-ALLOYS #ANDERSON MODEL #STATIC PROPERTIES #IMPURITY STATES #FANO #TRANSPORT #DEPENDENCE #SYSTEMS #Physics, Condensed Matter |
Tipo |
article original article publishedVersion |