RCE photodiodes at wavelength band of 1.06 μm

Resonant cavity enhancement (RCE) typed optical detector and modulator which operating at wavelength band of 1.06 μm is reported. The peak quantum efficiency of detector is reasonably high as 50% without bias, and the photocurrent contrast ratio of modulator is 3.6 times at -3.5 V as compared to 0 V. The incident angle dependence of RCE device's photoelectric response is investigated carefully.

倒装焊组装的光电混合集成RCE探测器面阵

报道了一种可用于并行光传输系统的64 * 64光探测器面阵。器件结构采用谐振腔增强型（RCE），吸收区由3层InGaAs/GaAs量子阱构成，谐振腔是由2组多层布拉格反射镜组成，工作波长位于980 nm。该器件利用倒装焊技术，将GaAs基的谐振腔增强型光探测器面阵与相应的Si基标准CMOS集成电路混合集成在一起，形成具备64 * 64路光并行接收及处理的大规模光电集成探测器面阵器件，并对光探测器面阵的主要特性进行了测试，测试结构显示该面阵具有均匀的电特性，反向偏压均大于14 V，暗电流约为10 nA数量级。

集成液晶可调谐RCE光电探测器的实验研究

实现了波长调谐范围为8 nm的集成液晶可调谐谐振腔增强型（RCE）光电探测器，并且对相应的实验结果进行讨论。这种器件可用在波分复用（WDM）光网络中。

基于VCSEL的RCE探测器光电响应特性

对垂直腔面发射激光器（VCSEL）及由此制成的谐振增强型（RCE）光电探测器进行分析研究。激光器的I_(th) = 3 mA、η_d = 15%、λ_p = 839 nm和Δλ_(1/2) = 0.3 nm；作为探测器，光电流谱峰值响应在839 nm，响应谱线半宽2.4 nm、具有良好的波长选择特性，量子效率5%～35%(0 V～5 V)。优化设计顶镜反射率，还能得到量子效率峰值和半宽优化兼容的VCSEL基RCE光电探测器。

一种具有平顶陡边响应的新型谐振腔增强型（RCE）光电探测器的理论分析及模拟

提出了一种适用于波分复用系统的具有平顶陡边响应的新型谐振腔强型（RCE）光电探测器结构，模拟得到了量子效率从峰值下降0.5dB的线宽1.8 nm，10 dB的线宽5.6 nm，20 dB的线宽10.4 nm，量子效率峰值99.7%，几乎没有凹陷的响应曲线。

平顶陡边响应的谐振腔增强型（RCE）光电探测器的分析

报道了一种具有平顶陡边响应的谐振腔增强型（RCE）光电探测器。使用数值模拟的方法对这种新型谐振腔增强型（RCE）光电探测器与传统的RCE光电探测器的响应曲线和串扰特性进行了分析和对比，分析了在半导体材料生长时厚度偏差对平顶陡边响应的RCE光电探测器响应曲线的影响，还分析了入射光的入射角和偏振态对平顶陡边响应的RCE光电探测器响应曲线的影响。

多量子阱RCE光探测器的响应及调谐特性的实验研究

于2010-11-23批量导入

RCE光电探测器顶部 DBR的优化（英文）

对研制的VCSEL结构外延片制成的谐振腔增强型(简称RCE)光电探测器进行了物理分析和实验研究，由于VCSEL与RCE光电探测器对谐振腔反射镜的反射率要求不同，通过腐蚀VCSEL器件顶部DBR，改变顶镜反射率，能够得到量子效率峰值和半宽优化兼容的RCE光电探测器，实现VCSEL与RCE探测器的单片集成。

Effects of non-abrupt interface on waveguide properties of sitle/Si MQW photodetector

于2010-11-23批量导入

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodetectors (RCE-PD) for application in optical fiber communication network

　

Long-wavelength Si-based MQW photodetectors for application in optical fiber communication

Si-based SiGe/Si strained MQW long-wavelength photodetectors (PD) with cycle type (Ring Shape) waveguide (CWG) and resonant-cavity-enhanced (RCE) structure have been investigated for the first time for improving the quantum efficiency and response time. The results show that the responsivities are higher than that of conventional PD with a same Ge content reported previously. In addition, RCE-PD has an obvious narrow band response with FWHM less than 6nm.

Design and fabrication of GaAs OMIST photodetector

We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of A1As layer that is grown by MBE form the Ultra-Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage V-s, sufficient incident light can switch OMIST from high impedance low current"off"state to low impedance high current "on"state. The absorbing material of OMIST is GaAs, so if the wavelength of incident light within 600 similar to 850nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

Long-wavelength SiGe/Si MQW resonant-cavity-enhanced photodiodes (RCE-PD)

Si1-xGex/Si optoelectronic devices are promising for the monolithic integration with silicon-based microelectronics. SiGe/Si MQW RCE-PD (Resonant-Cavity-Enhanced photodiodes) with different structures were investigated in this work. Design and fabrication of top- and bottom-incident RCE-PD, such as growth of SiGe MQW (Multiple Quantum Wells) on Si and SOI (Si on insulator) wafers, bonding between SiGe epitaxial wafer and SOR (Surface Optical Reflector) consisting Of SiO2/Si DBR (Distributed Bragg Reflector) films on Si, and performances of RCE-PD, were presented. The responsivity of 44mA/W at 1.314 mum and the FWHM of 6nm were obtained at bias of 10V. The highest external quantum efficiency measured in the investigation is 4.2%.

Rapid, objective detection of cataract-induced blur using a bull's eye photodetector.

PURPOSE: To determine whether optical aberrations caused by cataract can be detected and quantified objectively using a newly described focus detection system (FDS). SETTING: The Wilmer Opthalmological Institute, The Johns Hopkins University School of Medicine, Baltimore, Maryland, USA. METHODS: The FDS uses a bull's eye photodetector to measure the double-pass blur produced from a point source of light. To determine the range and level of focus, signals are measured with a series of trial lenses in the light path selected to span the point of best focus to generate focus curves. The best corrected visual acuity (BCVA), refractive error, lens photograph grades, and FDS signals were obtained in 18 patients scheduled to have cataract surgery. The tests were repeated 6 weeks after surgery. RESULTS: The mean FDS outcome measures improved after cataract surgery, with increased peak height (P=.001) and decreased peak width (P=.001). Improvement in signal strength (integral of signal within +/-1.5 diopters of the point of best focus) strongly correlated with improvement in peak height (R(2)=.88, P<.0001) and photographic cataract grade (R(2)=.72, P<.0001). The mean BCVA improved from 20/50 to 20/26 (P<.0001). The improvement in BCVA correlated more closely with FDS signal strength (R(2)=.44, P=.001) than with cataract grade (R(2)=.25, P=.06). CONCLUSIONS: Improvement in FDS outcome measures correlated with cataract severity and improvement in visual acuity. This objective approach may be useful in long-term studies of cataract progression.