Numerical modelling of thermal effects in rats due to high-field magnetic resonance imaging (0.5-1 GHz)

A finite-difference time-domain (FDTD) thermal model has been developed to compute the temperature elevation in the Sprague Dawley rat due to electromagnetic energy deposition in high-field magnetic resonance imaging (MRI). The field strengths examined ranged from 11.75-23.5 T (corresponding to H-1 resonances of 0.5-1 GHz) and an N-stub birdcage resonator was used to both transmit radio-frequency energy and receive the MRI signals. With an in-plane resolution of 1.95 mm, the inhomogeneous rat phantom forms a segmented model of 12 different tissue types, each having its electrical and thermal parameters assigned. The steady-state temperature distribution was calculated using a Pennes 'bioheat' approach. The numerical algorithm used to calculate the induced temperature distribution has been successfully validated against analytical solutions in the form of simplified spherical models with electrical and thermal properties of rat muscle. As well as assisting with the design of MRI experiments and apparatus, the numerical procedures developed in this study could help in future research and design of tumour-treating hyperthermia applicators to be used on rats in vivo.

Cascaded nonlinear absorption of femtosecond laser pulses in dielectrics

We investigated the energy deposition process leading to the waveguide inscription in transparent dielectrics both experimentally and theoretically. Parameters of multiphoton absorption process and inscription thresholds were measured in a range of materials including YAG, ZnSe, RbPb2Cl5 crystals, and in fused silica and BK7 glasses.

Investigation of particle identification methods for the analysis of the photoproduction of neutral kaons on a liquid deuterium target

The Photoproduction of neutral kaons off a deuteron target has been investigated at the Tohoku University Laboratory of Nuclear Science. The PID methods investigated incorporated a combination of momentum, velocity (β=v/c), and energy deposition per unit length (dE/dx) measurements. The analysis demonstrates that energy deposition and time of flight are exceedingly useful. A higher signal to background ratio was achieved for hard cuts in combination. A probabilistic likelihood estimation approach (LE) as a method for PID was also explored. The probability of a particle being correctly identified by this LE method and the preliminary results denote the need for highly precise limitations on the distributions from which the parameters would be extracted. It was confirmed that these PID are applicable approaches to properly identify pions for the analysis of this experiment. However, the background evident in the mass spectra points to the need for a higher level of proton identification.

Comparison of available measurements of the absolute air-fluorescence yield and determination of its global average value

Experimental results of the absolute air-fluorescence yield are given very often in different units (photons/MeV or photons/m) and for different wavelength intervals. In this work we present a comparison of available results normalized to its value in photons/MeV for the 337 nm band at 1013 hPa and 293 K. The conversion of photons/m to photons/MeV requires an accurate determination of the energy deposited by the electrons in the field of view of the experimental set-up. We have calculated the energy deposition for each experiment by means of a detailed Monte Carlo simulation and the results have been compared with those assumed or calculated by the authors. As a result, corrections to the reported fluorescence yields are proposed. These corrections improve the compatibility between measurements in such a way that a reliable average value with uncertainty at the level of 5% is obtained.

The dynamics of neutrino-driven supernova explosions after shock revival in 2D and 3D

We study the growth of the explosion energy after shock revival in neutrino-driven explosions in two and three dimensions (2D/3D) using multi-group neutrino hydrodynamics simulations of an 11.2 M⊙ star. The 3D model shows a faster and steadier growth of the explosion energy and already shows signs of subsiding accretion after one second. By contrast, the growth of the explosion energy in 2D is unsteady, and accretion lasts for several seconds as confirmed by additional long-time simulations of stars of similar masses. Appreciable explosion energies can still be reached, albeit at the expense of rather high neutron star masses. In 2D, the binding energy at the gain radius is larger because the strong excitation of downward-propagating g modes removes energy from the freshly accreted material in the downflows. Consequently, the mass outflow rate is considerably lower in 2D than in 3D. This is only partially compensated by additional heating by outward-propagating acoustic waves in 2D. Moreover, the mass outflow rate in 2D is reduced because much of the neutrino energy deposition occurs in downflows or bubbles confined by secondary shocks without driving outflows. Episodic constriction of outflows and vertical mixing of colder shocked material and hot, neutrino-heated ejecta due to Rayleigh–Taylor instability further hamper the growth of the explosion energy in 2D. Further simulations will be necessary to determine whether these effects are generic over a wider range of supernova progenitors.

Impact energy dependence of Al13 cluster deposition on Ni(001) surface

In this paper, the influence of the impact energy on the initial fabrication of thin films formed by low energy cluster deposition was investigated by molecular dynamics simulation of All 3 clusters depositing on Ni(0 0 1) substrate. In the case of soft-landing, (0.01 eV/atom), clusters are rearranged from I-h symmetry into fcc-like clusters on the surface. Then they aggregate each other, which result in thin film growing in 3D island mode. While, growth will be in layer-by-layer mode at the impact energy of a few electron volt due to the transient lateral spread of cluster atoms induced by dense collision cascade. This effect has been traced to collision cascade inside the cluster. which is enhanced by collision with a hard Ni substrate. (C) 2002 Elsevier Science B.V. All rights reserved.

EQCM investigation of electrochemical deposition and stability of Co-Pi oxygen evolution catalyst of solar energy storage

Photoassisted electrolysis of water is considered as an effective way of storing solar energy in the form of hydrogen fuel. This overall reaction involves the oxidation of water to oxygen at the anode and the reduction of protons to hydrogen at the cathode. Cobalt-phosphate-based catalyst (Co-Pi) is a potentially useful material for oxygen evolution reaction. In the present study, electrochemical deposition of Co-Pi catalyst is carried out on Au-coated quartz crystal from 0.1 M phosphate buffer (pH 7) containing 0.5 mM Co2+ ion, along with the simultaneous measurement of mass changes at the electrode surface. Cyclic voltammograms and mass variations are recorded during the course of deposition. A current peak is observed at 0.92 V vs Ag/AgCl, 3 M KCl corresponding to oxidation of Co2+ ion. The mass of the electrode starts increasing at this potential, suggesting the deposition of a Co(III)-based insoluble product on the electrode surface. The stability of the catalyst is also studied at several potentials in both buffered and nonbuffered electrolyte by monitoring the real-time mass variations.

Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition

The Ga1-xMnxSb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga1-xMnxSb samples showed

Investigation of Mn-Implanted n-Si by Low-Energy Ion Beam Deposition

Mn ions were implanted to n-type Si(0 0 1) single crystal by low-energy ion beam deposition technique with an energy of 1000 eV and a dose of 7.5 x 10^{17} cm^{-2}. The samples were held at room temperature and at 300degreesC during implantation. Auger electron spectroscopy depth profiles of samples indicate that the Mn ions reach deeper in the sample implanted at 300degreesC than in the sample implanted at room temperature. X-ray diffraction measurements show that the structure of the sample implanted at room temperature is amorphous while that of the sample implanted at 300degreesC is crystallized. There are no new phases found except silicon both in the two samples. Atomic force microscopy images of samples indicate that the sample implanted at 300degreesC has island-like humps that cover the sample surface while there is no such kind of characteristic in the sample implanted at room temperature. The magnetic properties of samples were investigated by alternating gradient magnetometer (AGM). The sample implanted at 300degreesC shows ferromagnetic behavior at room temperature.

Mn implanted GaAs by low energy ion beam deposition

High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.

FexSi grown with mass-analyzed low-energy dual ion beam deposition

Heavily iron-implanted silicon was prepared by mass-analyzed low-energy dual ion beam deposition technique. Auger electron spectroscopy depth profiles indicate that iron ions are shallowly implanted into the single-crystal silicon substrate and formed 35 nm thick FexSi films. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is partially restored after as-implanted sample was annealed at 400degreesC. There are no new phases formed. Carrier concentration depth profile of annealed sample was measured by Electrochemical C-V method and indicated that FexSi film shows n-type conductivity while silicon substrate is p-type. The p-n junction is formed between FexSi film and silicon substrate showing rectifying effect. (C) 2003 Elsevier B.V. All rights reserved.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.