978 resultados para intermediate energy heavy-ion beam
Resumo:
Two-dimensional photonic crystals in near infrared region were fabricated by using the focused ion beam ( FIB) method and the method of electron-beam lithography (EBL) combined with dry etching. Both methods can fabricate perfect crystals, the method of FIB is simple,the other is more complicated. It is shown that the material with the photonic crystal fabricated by FIB has no fluorescence,on the other hand, the small-lattice photonic crystal made by EBL combined with dry etching can enhance the extraction efficiency two folds, though the photonic crystal has some disorder. The mechanisms of the enhanced-emission and the absence of emission are also discussed.
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CeO2 thin film was fabricated by dual ion beam epitaxial technique. The violet/blue PL at room temperature and lower temperature was observed from the CeO2 thin film. After the analysis of crystal structure and valence in the compound was carried out by the XRD and XPS technique, it was inferred that the origin of CeO2 PL was due to the electrons transition from Ce4f band to O2p band and the defect level to O2p band. And these defects levels were located in the range of 1 eV around Ce4f band.
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A model for analyzing point defects in compound crystals was improved. Based on this modified model, a method for measuring Mn content in GaMnAs was established. A technique for eliminating the zero-drift-error was also established in the experiments of X-ray diffraction. With these methods, the Mn content in GaMnAs single crystals fabricated by the ion-beam epitaxy system was analyzed.
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CeO2 thin film was fabricated by dual ion beam epitaxial technique. The phenomenon of PL violet shift at room temperature was observed, and the distance of shift was about 65 nm. After the analysis of crystal structure and valence in the compound were carried out by XRD and XPS technique, it was concluded that the PL shift was related with valence of cerium ion in the oxides. When the valence of cerium ion varied front tetravalence to trivalence, the PL peak position would move from blue region to violet region and the phenomenon of "violet shift" was observed.
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A novel process of room temperature ion beam sputtering deposition of vanadium oxide films and low temperature post annealing for uncooled infrared detectors was proposed in this work. VOx thin films with relatively low square resistance (70 K Omega / square) and large temperature coefficient of resistance (more than 3%/K) at room temperature were fabricated using this low temperature process which was very compatible with the process of uncooled infrared detectors based on micromachined technology. Furthermore, chemical composition and film surface have been characterized using X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) respectively. The results showed that the main composition of the processed thin films was V2O5 and the thin films were in the process of crystallization.
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A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. Based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. Our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. There is no length limit for the nano-gap electrode and the nano-channel. The method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.
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Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by dual ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 degrees C, higher than that defined by optical phase transiton property at 5 mu m, 60 degrees C; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semiconductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition properties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave band. The phase transition properties can be tuned through wavelength in infrared wave band, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property.
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介绍了一种利用离子束外延(Ion-beam Epitaxy, IBE)技术制备生长高纯稀土功能薄膜的新方法. 以纯度要求不高的低成本稀土氯化物为原材料来产生大束流稀土元素离子, 通过准确控制双束合成或单束浅结注入掺杂的同位素纯低能离子的能量、束斑形状、沉积剂量与配比及生长温度, 在超高真空生长室内实现了稀土功能薄膜的高纯生长和低温优质外延. 文中除了对新方法的技术特点、实施方式和应注意的关键技术进行了阐述, 还结合CeO2, Gd2O3, GdxSi1-x等薄膜的制备研究, 讨论了离子的束流密度、剂量配比、能量和生长温度等生长参数对成膜质量的影响.
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A windowed very-small-aperture laser 9VSAL0 source for use in high-resolution near field optical data storage is fabricated. The windowed regions are introduced to avoid shorting the pn junction with metal coating and suppress the COD effect. It facilitates producing VSAL by simplified technology and improves the laser performance. A VSAL with 400nm small sperture is demonstrated by focused ion beam (FIB0 and the output power is 0.3mW at 31mA.
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We have achieved in-situ Si incorporation into cubic boron nitride (c-BN) thin films during ion beam assisted deposition. The effects of silicon incorporation on the composition, structure and electric conductivity of c-BN thin films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and electrical measurements. The results suggest that the content of the cubic phase remains stable on the whole with the incorporation of Si up to a concentration of 3.3 at.%, and the higher Si concentrations lead to a gradual change from c-BN to hexagonal boron nitride. It is found that the introduced Si atoms only replace B atoms and combine with N atoms to form Si-N bonds, and no evidence of the existence of Si-B bonds is observed. The resistance of the Si-doped c-BN films gradually decreases with increasing Si concentration, and the resistivity of the c-BN film with 3.3 at.% Si is lowered by two orders of magnitude as compared to undoped samples.
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Ni/SiO2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×1012,5×1012 Xe/cm2 and 853 MeV Pb ions to 5×1011 Pb/cm2,respectively.These samples were analyzed using Rutherford Backscattering Spectrometry(RBS) and X-ray diffraction spectroscopy(XRD),from which the intermixing and phase change were investigated.The obtained results show that both Xe-and Pb-ions could induce diffusion of Ni atoms to SiO2 substrates and result in intermixing of Ni with SiO2.Furthermore,1.0×1012 Xe/cm2 irradiat...中文摘要:在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/SiO2样品,用卢瑟福背散射和X射线衍射技术对样品进行了分析。通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化,探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。实验结果显示,Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni,Si和O原子的混合。实验观测到低剂量Xe离子辐照可产生NiSi2相,而高剂量Xe离子辐照则导致了Ni3Si和NiO相的形成。根据热峰模型,Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。
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This paper describes the technique targets and operation principle of the scanning power supply for the deep tumor therapy facility with heavy ions in Cooler-Storage-Ring of the Heavy Ion Research Facility in Lanzhou(HIRFL-CSR).To ensure the specified accuracy of the current,the hysteresis loop control strategy was adopted,and tracking error was constrained in the specified tolerance.One prototype was designed and installed.And the simulation results and test results were listed in the paper.The results sho...中文摘要:阐述了用于兰州重离子深层治癌装置的扫描电源的技术指标和工作原理,为保证该电源输出电流的精度,采用滞环控制策略,将跟踪误差限制在设计要求的误差范围内。研制了1台扫描电源样机,并给出了电路仿真和测试结果。测试结果显示各项指标均达到了设计要求,表明所选电路结构和滞环控制方案是切实可行的。
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Basic algorithms of biological effective dose optimization and dose distribution on CT image for the heavy ion therapy project at the Institute of Modern Physics(IMP),Chinese Academy of Sciences(CAS) are reported in this paper.Firstly,biological effective dose optimization is conducted in water.According to the relationship between CT number and water equivalent path length,an integral algorithm is used to calculate the average dose within a pixel and then the dose distribution in tissue is derived.Secondly...中文文摘:针对深部肿瘤重离子治疗临床试验的需求,首先在水介质中进行生物有效剂量的优化计算,然后根据CT图像中像素CT值与水等效长度转换系数之间的关系,结合水中的深度剂量分布曲线对每个像素进行积分得到CT图像上的生物有效剂量分布。同时介绍了基于被动式束流配送系统适形照射时的剂量确定方式,并提出二维适形放疗也应使用分层照射方式以适应治疗时的不同要求。这些方法适合目前及今后在IMP进行的重离子治癌临床试验研究中治疗计划系统的需要。
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Helicon plasma source is known as an efficient generator of uniform and high density plasma. A helicon plasma source was developed for the investigation of plasma striping and plasma lens at the Institute of Modern Physics, CAS. In this paper, the characteristics of helicon plasma have been studied by using Langmuir four-probe and a high plasma density up to 3.9×1013 /cm3 has been achieved with the Nagoya type III antenna. In the experiment, several important phenomena have been found: (1) for a given magnetic induction intensity, the plasma density became greater with the increase of RF power; (2) the helicon mode appeared at the RF power between 300 W and 400 W; (3) the plasma density gradually tended to saturation as the RF power increased to the higher power; (4) a higher plasma density can be obtained by a good matching between the RF power and the magnetic field distribution. The key issue is how to optimize the matching between the RF power and the magnetic field. Moreover, some tests on the extraction of ion beam were performed, and the preliminary results were given. The problems which existed in the helicon ion source will be discussed and the increase in beam density will be expected by extraction system optimum.
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In order to investigate the effect of carbon ion irradiation on apoptosis and Bax/Bcl-2 expression inhuman tongue carcinoma cells, exponentially growing human tongue carcinoma cells (Tb) cultured in vitro were irradiated with 0, 0.5, 1.0, 2.0 or 4.0 Gy of 12C6+ ions respectively. Survival rate of irradiated cells at various doses were measured by MTT assay. The nucleus changes of apoptosis and necrosis of cells stained by Hochest/PI were observed through fluorescence microscope. The cell cycle changes were detected by flow cytometry (FCM). The expressions of Bax and Bcl-2 were detected by Western blot analysis. The results show that the viability of Tb cells decreases gradually with increment of irradiation doses of carbon ions. The proportions of apoptosis cells in the irradiated groups are significantly higher than those in the control group. There is a positive correlation between irradiation doses and retardation strength in G2 /M phase at 24 h after irradiation (P<0.05). And the expressions of Bax and bcl-2 are significantly up-regulated and down-regulated respectively by 12C6+ ion irradiation. It can be concluded from above that cell apoptosis induced by heavy ion with high-LET may be mediated through the Bax/Bcl-2 expression pathway. 探讨重离子辐照对人舌鳞癌Tb细胞的凋亡及Bax/Bcl-2蛋白表达的影响。采用0、0.5、1.0、2.0、4.0 Gy重离子束辐照人舌鳞癌 Tb 细胞,应用 MTT 法检测细胞存活,流式细胞技术检测细胞周期变化,Hoechst33258/PI 复染法观察 Tb 细胞凋亡形态,并采用 Western-blot 法检测 Bax/Bcl-2 蛋白表达情况。结果发现,Tb细胞经12C6+离子束辐照后存活率显著下降,呈剂量依赖性的生长抑制;Tb细胞呈现蓝色荧光浓集成团的凋亡形态,且凋亡比例随辐照剂量增加;G2/M 期细胞百分数随照射剂量增加而增加(P<0.05) 。Western-blot结果显示 Bax 蛋白表达水平随辐照剂量逐渐上升,但在 4 Gy 组其表达不再增高,Bcl-2 蛋白在 1.0、2.0、4.0 Gy组随剂量增大呈下降趋势。以上结果提示重离子束辐照对 Tb 细胞有抑制作用,Bax/Bcl-2 蛋白表达是重离子治癌的机制之一。