Numerical study of sub-wavelength plasmonic waveguide

The authors present an analysis of a plasmonic waveguide, simulated using a two-dimensional finite-difference time-domain technique. With the surface structures located on the surface of the metal, the device is able to confine and guide light waves in a sub-wavelength scale. And two waveguides can be placed within 150 nm (similar to 6% of the incident wavelength) that will helpful for the optoelectronic integration. Within the 20 mu m simulation region, it is found that the intensity of the guided light at the interface is roughly two to four times the peak intensity of the incident light, and the propagation length can reach approximately 40 Pm at the wavelength of 2.44 mu m. (c) 2007 Elsevier B.V. All rights reserved.

DISCRETELY TUNABLE FIBER RING LASER USING FBG TUNABLE FILTER AND MACH-ZEHNDER INTERFEROMETER

A discretely tunable Er-doped fiber-ring laser using a fiber Mach-Zehnder interferometer (MZI) and a tunable fiber Bragg grating (FBG) is proposed. In this scheme, the combination of MZI and FBG acts as a discrete wavelength selector. Analysis of its transmission function shows that discrete wavelength tuning can be realized, and experiments demonstrate 64 single-mode outputs with a mode spacing of 181.7 pm, and the output power is quite stable in the whole tuning range. (C) 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51 2595-2598, 2009; Published online in Wiley InterScience (www. interscience.wiley.com). DOI 10.1002/mop.24690

Elimination of environmental noise in interferometric wavelength shift demodulation for dynamic fiber Bragg grating sensor array

We present a novel reference compensation method for eliminating environmental noise in interferometric wavelength shift demodulation for dynamic fiber Bragg grating (FBG) sensors. By employing a shielded wavelength-division-multiplexed reference FBG in the system the environmental noise is mea, sured from the reference channel, and then subtracted from the demodulation result of each sensor channel. An approximate 40 dB reduction of the environmental noise has been experimentally achieved over a frequency range from 20 Hz to 2 kHz. This method is also suitable for the elimination of broadband environmental noise. The corresponding FBG sensor array system proposed in this paper has shown a wave-length resolution of 7 x 10(-4) pm/root Hz. (c) 2009 Elsevier B.V. All rights reserved.

Fiber Bragg grating pressure sensor with ultrahigh sensitivity and reduced temperature sensitivity

A fiber Bragg grating (FBG) pressure sensing scheme based on a flat diaphragm and an L-shaped lever is presented. An L-shaped lever transfers the pressure-induced defection of the flat diaphragm to the axial elongation of the FBG. The curve where the L-shaped lever contacts the diaphragm is a segment of an Archimedes spiral, which is used to enhance the responsivity. Because the thermal expansion coefficient of the quartz-glass L-shaped lever and the steel sensor shell is different, the temperature effect is compensated for by optimizing the dimension parameters. Theoretical analysis is presented, and the experimental results show that an ultrahigh pressure responsivity of 244 pm/kPa and a low temperature responsivity of 2.8 pm/degrees C are achieved. (c) 2009 Society of Photo-Optical Instrumentation Engineers. [DOI 10.1117/1.3081058]

Characterization of polymorphous silicon thin film and solar cells

Polymorphous silicon (pm-Si:H) films have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the pm-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. There are a blue shift for the stretching mode of IR spectra and a red shift for the wagging mode. The shifts are attributed to the variation of the microstructure. By using pm-Si:H film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51% and a stabilized efficiency of 8.01% (AM1.5, 100mw/cm(2)) at room temperature (T-R).

Antiphase state in passively Q-switched Yb : YAG microchip multimode lasers with a saturable absorber GaAs

We report on recent experimental results of the spontaneous antiphase dynamics that occurs in a laser-diode-pumped multimode passively Q-switched microchip Yb:YAG (where YAG is yttrium aluminum garnet) lasers with a saturable absorber GaAs. We observe that the pulse sequence of the first mode characterized by one, two, and three pulses as a group and all the modes display an antiphase state as the pumping ratio rises. We modify the multimode rate equations to account for nonlinear absorption due to GaAs in the presence of spatial hole burning. We perform numerical simulations based on the proposed rate equations and reproduce the observed antiphase state of two and three active modes.

Observation of antiphase states in a passively Q-switched multimode microchip Yb : YAG laser with a GaAs saturable absorber

Antiphase dynamics has been observed experimentally for the laser modes operation in a laser-diode-pumped Q-switched microchip Yb:YAG laser with GaAs as a saturable absorber in the presence of spatial hole-burning. The Q-switched pulses sequences of two modes at different pump power have been obtained. The experimental results have shown that the pulses sequences displayed classic antiphase dynamics. (C) 2003 Elsevier B.V. All rights reserved.

Temperature-independent fiber Bragg grating strain sensor using bimetal cantilever

A new packaged fiber Bragg grating using bimetal cantilever beam as the strain agent is presented. The grating is two-point attached on one specific surface of the bimetal beam which consists of two metallic material with different thermal-expansion coefficient. Thereby the grating can be compressed or stretched along with the cantilever beam while temperature varies and temperature compensation can be realized. At the same time, grating chirping can be avoided for the particular attaching method. Experiment results demonstrated that the device is able to automatically compensate temperature induced wavelength shift. The temperature dependence of Bragg wavelength reduced to -0.4 pm/degrees C over the temperature range from -20 to 60 degrees C. This fiber grating package technique is cost effective and can be used in strain sensing. (c) 2005 Elsevier Inc. All rights reserved.

Calculation of energy levels in InGaAs/GaAs quantum dot array

The subbands of the ground state E-c1, the first excited state E-c2 and heavy hole state E-HH1 are calculated by solving the eigenvalues of effective-mass Hamiltonian H-0 which is derived from eight-band k . p theory and the calculations are performed at k(x) = k, = k = 0 for the three-dimensional array of InGaAs/GaAs quantum dots (QDs). With indium content in InGaAs QDs gradually increasing from 30% to 100%,the intersubband transition wavelength of E-c2 to E-c1, blue-shifts from 18.50 to 11.87 mu m,while the transition wavelength of E-c1, to E-HH1, red-shifts from 1. 04 to 1. 73 mu m. With the sizes of Ir-0.5 Ga-0.5 As and InAs QDs increasing from 1.0 to 5.0 nm, the intersubband transition from E-c1, to E-C2 transforms from bound-state-to-continuum-state to bound-state-to-bound-state, and the corresponding intersubband transition wavelengths red-shift from 8.12 pm (5.90 pm) to 53.47 mu m (31.87 pm), respectively, and the transition wavelengths of E-C1 to E-HH1 red-shift from 1. 13 mu m (1.60 mu m) to 1.27 mu m (2.01 mu m), respectively.

Room-temperature continuous-wave electrically injected InP-GaInAsP equilateral-triangle-resonator lasers

Equilateral-triangle-resonator (ETR) microlasers with an output waveguide connected to one of the vertices of the ETR are suitable to be a light source for photonic integrated circuits. InP-GaInAsP ETR lasers with side length from 10 to 30 pm and the output-waveguide width of 1 or 2 pm are fabricated using standard photolithography and inductively coupled-plasma etching techniques. Continuous-wave electrically injected 1520-nm ETR laser with 20-mu m sides is realized with the maximum output power 0.17 and 0.067 mW and the threshold current 34 and 43 mA at 290 K and 295 K, respectively.

Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer

Six-period 4 nm GaN/10 nm AlxGa1-xN superlattices with different Al mole fractions x were prepared on (0001) sapphire substrates by low-temperature metal-organic chemical vapor deposition. The linear electro-optic (Pockels) effect was studied by a polarization-maintaining fiber-optical Mach-Zehnder interferometer system with an incident light wavelength of 1.55 mu m. The measured electro-optic coefficients, gamma(13)=5.60 +/- 0.18 pm/V, gamma(33)=19.24 +/- 1.21 pm/V (for sample 1, x=0.3), and gamma(13)=3.09 +/- 0.48 pm/V, gamma(33)=8.94 +/- 0.36 pm/V (for sample 2, x=0.1), respectively, are about ten times larger than those of GaN bulk material. The enhancement effect in GaN/AlxGa1-xN superlattice can be attributed to the large built-in field at the interfaces, depending on the mole fraction of Al. (C) 2007 American Institute of Physics.

A novel vision chip for high-speed target tracking

This paper presents a novel vision chip for high-speed target tracking. Two concise algorithms for high-speed target tracking are developed. The algorithms include some basic operations that can be used to process the real-time image information during target tracking. The vision chip is implemented that is based on the algorithms and a row-parallel architecture. A prototype chip has 64 x 64 pixels is fabricated by 0.35 pm complementary metal-oxide-semiconductor transistor (CMOS) process with 4.5 x 2.5 mm(2) area. It operates at a rate of 1000 frames per second with 10 MHz chip main clock. The experiment results demonstrate that a high-speed target can be tracked in complex static background and a high-speed target among other high-speed objects can be tracked in clean background.

Equilateral-triangle-resonator injection lasers with directional emission

Equilateral-triangle-resonator (ETR) lasers with an output waveguide jointed at one vertex of the resonator are fabricated on (100) GaInAsP-InP wafers using photolithography and a two-step inductively coupled plasma (ICP) etching technique. Distinct peaks with the mode spacing of longitudinal mode intervals are observed in the luminescence spectra at room temperature. Furthermore, some minor peaks appear in the middle of the main peaks, which can be attributed to the first-order transverse modes as predicted in the theoretical results. CW directional lasing emissions are achieved for ETR lasers with side lengths ranging from 15 to 30 pm up to 200 K. The temperature dependences of the threshold current and lasing wavelength are measured for an ETR laser with the side length of 20 mu m from 80 to 200 K. The observed threshold current rapidly increases as temperature increases over 170 K.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

SOC dynamic power management using artificial neural network

Dynamic Power Management (DPM) is a technique to reduce power consumption of electronic system by selectively shutting down idle components. In this article we try to introduce back propagation network and radial basis network into the research of the system-level power management policies. We proposed two PM policies-Back propagation Power Management (BPPM) and Radial Basis Function Power Management (RBFPM) which are based on Artificial Neural Networks (ANN). Our experiments show that the two power management policies greatly lowered the system-level power consumption and have higher performance than traditional Power Management(PM) techniques-BPPM is 1.09-competitive and RBFPM is 1.08-competitive vs. 1.79, 1.45, 1.18-competitive separately for traditional timeout PM, adaptive predictive PM and stochastic PM.