Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer
| Data(s) |
2007
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| Resumo |
Six-period 4 nm GaN/10 nm AlxGa1-xN superlattices with different Al mole fractions x were prepared on (0001) sapphire substrates by low-temperature metal-organic chemical vapor deposition. The linear electro-optic (Pockels) effect was studied by a polarization-maintaining fiber-optical Mach-Zehnder interferometer system with an incident light wavelength of 1.55 mu m. The measured electro-optic coefficients, gamma(13)=5.60 +/- 0.18 pm/V, gamma(33)=19.24 +/- 1.21 pm/V (for sample 1, x=0.3), and gamma(13)=3.09 +/- 0.48 pm/V, gamma(33)=8.94 +/- 0.36 pm/V (for sample 2, x=0.1), respectively, are about ten times larger than those of GaN bulk material. The enhancement effect in GaN/AlxGa1-xN superlattice can be attributed to the large built-in field at the interfaces, depending on the mole fraction of Al. (C) 2007 American Institute of Physics. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Chen, P (Chen, P.); Tu, XG (Tu, X. G.); Li, SP (Li, S. P.); Li, JC (Li, J. C.); Lin, W (Lin, W.); Chen, HY (Chen, H. Y.); Liu, DY (Liu, D. Y.); Kang, JY (Kang, J. Y.); Zuo, YH (Zuo, Y. H.); Zhao, L (Zhao, L.); Chen, SW (Chen, S. W.); Yu, YD (Yu, Y. D.); Yu, JZ (Yu, J. Z.); Wang, QM (Wang, Q. M.) .Enhanced Pockels effect in GaN/AlxGa1-xN superlattice measured by polarization-maintaining fiber Mach-Zehnder interferometer ,APPLIED PHYSICS LETTERS,JUL 16 2007,91 (3):Art.No.031103 |
| Palavras-Chave | #光电子学 #QUANTUM-WELLS |
| Tipo |
期刊论文 |
