Suppressing Fermi acceleration in two-dimensional driven billiards

We consider a dissipative oval-like shaped billiard with a periodically moving boundary. The dissipation considered is proportional to a power of the velocity V of the particle. The three specific types of power laws used are: (i) F proportional to-V; (ii) F proportional to-V-2 and (iii) F proportional to-V-delta with 1 < delta < 2. In the course of the dynamics of the particle, if a large initial velocity is considered, case (i) shows that the decay of the particle's velocity is a linear function of the number of collisions with the boundary. For case (ii), an exponential decay is observed, and for 1 < delta < 2, an powerlike decay is observed. Scaling laws were used to characterize a phase transition from limited to unlimited energy gain for cases (ii) and (iii). The critical exponents obtained for the phase transition in the case (ii) are the same as those obtained for the dissipative bouncer model. Therefore near this phase transition, these two rather different models belong to the same class of universality. For all types of dissipation, the results obtained allow us to conclude that suppression of the unlimited energy growth is indeed observed.

Energy gain induced by boundary crisis

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Shrimp-shape domains in a dissipative kicked rotator

Some dynamical properties for a dissipative kicked rotator are studied. Our results show that when dissipation is taken into account a drastic change happens in the structure of the phase space in the sense that the mixed structure is modified and attracting fixed points and chaotic attractors are observed. A detailed numerical investigation in a two-dimensional parameter space based on the behavior of the Lyapunov exponent is considered. Our results show the existence of infinite self-similar shrimp-shaped structures corresponding to periodic attractors, embedded in a large region corresponding to the chaotic regime. (C) 2011 American Institute of Physics. [doi:10.1063/1.3657917]

Parameter space for a dissipative Fermi-Ulam model

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Decay of energy and suppression of Fermi acceleration in a dissipative driven stadium-like billiard

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Potassium niobate thin films prepared through polymeric precursor method

Thin films of potassium niobate were deposited on (100) Si substrates by the polymeric precursor method (Pechini method). Annealing in static air was performed at 600degrees C for 20 h. The obtained films were characterized by X-ray diffraction and atomic force microscopy (AFM). Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. The dielectric constant, dissipation factor and resistance were measured in frequency region from 10 Hz to 10 MHz. At 1 MHz, the dielectric constant was 158 and the dissipation factor was 0.11. (C) 2004 Elsevier B.V. All rights reserved.

LiNbO3 thin films prepared through polymeric precursor method

Thin films of lithium niobate were deposited on (100) silicon by the polymeric precursor method (Pechini method). Annealing in static air was performed at 500degreesC for 3 h. The films obtained were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. The dielectric constant, dissipation factor and resistance were measured in the frequency region from 10 Hz to 10 MHz. At 1 MHz, the dielectric constant was 46 and the dissipation factor was 0.043. (C) 2002 Elsevier B.V. B.V. All rights reserved.

Ferroelectric characteristics of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by the soft chemical method

Ferroelectric SrBi4Ti4O15 thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. X-ray diffraction patterns of the films indicate that they are polycrystalline in nature. Atomic force microscopy (AFM) analyses showed that the surface of these films is smooth, dense and crack-free with low surface roughness (6.4 nm). At room temperature and at a frequency of 1 MHz, the dielectric constant and the dissipation factor were, respectively, 150 and 0.022. The C-V characteristics of perovskite thin film prepared at low temperature show normal ferrolectric behaviour. The remanent polarization and coercive field for the films deposited were 5.4 mu C/cm(2) and 8 5 kV/cm, respectively. All the capacitors showed good polarization fatigue characteristics at least up to 1 x 10(10) bipolar pulse cycles indicating that SrBi4Ti4O15 thin films can be a promising material for use in nonvolatile memories. (c) 2005 Elsevier B.V. All rights reserved.

Influence of thickness on crystallization and properties of LiNbO3 thin films

Thin films of lithium niobate were deposited on Pt/Ti/SiO2 (111) substrates by spin coating from the polymeric precursor method (Pechini process). Annealing in static air was performed at 500 degreesC for 3 h. The obtained films were characterized by X-ray diffraction and atomic force microscopy. The dielectric constant, dissipation factor and resistance were measured in frequency region from 10 Hz to 10 MHz and the hysteresis loop was obtained. The influence of number of layers on crystallization, morphology and properties of LiNbO3 thin films is discussed. (C) 2003 Elsevier B.V. All rights reserved.

Electrical properties of lanthanum doped Bi4Ti3O12 thin films annealed in different atmospheres

Pure-and lanthanun doped Bi4Ti3O12 thin films were deposited on Pt/Ti/SiO2/Si substrate using a polymeric precursor solution. Annealing in static air and oxygen atmosphere was performed at 700 degrees C for 2 h. The obtained films were characterized by X-ray diffraction and atomic force microscopy. The dielectric constant and dissipation factor were measured in the frequency region from 1 kHz to 1 MHz. Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. Films annealed in static air possess a dielectric constant higher than films annealed in oxygen atmosphere due to differences in the grain size, crystallinity and structural defects. A regularly shaped hystereses loop is observed after annealing in static air. The obtained results suggest that the annealing in oxygen atmosphere can increase the trapped charge and the relaxation phenomenon. (c) 2006 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

Influence of oxygen atmosphere on crystallization and properties of LiNbO3 thin films

Thin films of lithium niobate were deposited on the Pt/Ti/SiO2 (111) substrates by spin coating from the polymeric precursor method (Pechini process). Annealing in static air and oxygen atmosphere was performed at 500 degreesC for 3 h. The films obtained were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The dielectric constant and dissipation factor were measured in frequency region from 10 Hz to 10 MHz. Electrical characterization of the films pointed to ferroelectricity via hysteresis loop. The influence of oxygen atmosphere on crystallization, morphology and properties of LiNbO3 thin films is discussed. (C) 2003 Elsevier Ltd. All rights reserved.

Climatologia de frentes frias no litoral de Santa Catarina

Uma climatologia de frentes frias é estabelecida para o litoral do Estado de Santa Catarina, com base nos dados de reanálises do NCEP-NCAR, do período de 10 anos, de 1990 a 1999. As passagens de frentes frias foram objetivamente identificadas levando em conta o giro do vento para direção sul, persistência do vento de sul por pelo menos um dia, e uma queda de temperatura do ar simultânea ao giro do vento ou até dois dias depois. Os resultados mostram que, na média, de 3 a 4 frentes frias atingem a costa de Santa Catarina, mensalmente, com um intervalo de 8 dias. As análises da composição de dados, usando como referência os dias de passagens de frentes frias em Santa Catarina, mostram claramente um padrão climatológico de evolução com frente fria movendo-se tipicamente de sudoeste para nordeste. em termos das médias sazonais, durante o inverno, um dia antes da passagem em Santa Catarina (dia -1), a frente fria é observada no Rio Grande do Sul, e depois de passar por Santa Catarina (dia 0), continua avançando para latitudes mais baixas, alcançando o litoral do Rio de Janeiro um dia depois (dia +1), até atingir posteriormente latitude de aproximadamente 20ºS (dia +2), já em fase de dissipação. No terceiro dia após a passagem por Santa Catarina, ela não é mais identificada. Padrão climatológico de evolução semelhante é observado no verão, embora nessa época as frentes frias tenham menor intensidade e dissipação ligeiramente mais rápida.

Filmes finos de SrBi2Ta2O9 processados em forno microondas

Filmes finos de SrBi2Ta2O9 foram depositados em substratos de Pt/Ti/SiO2/Si e, pela primeira vez, sinterizados em forno microondas doméstico. Os padrões de difração de raios X mostraram que os filmes são policristalinos. O processamento por microondas permite utilizar baixa temperatura na síntese e obter filmes com boas propriedades elétricas. Ensaios de microscopia eletrônica de varredura (MEV) e de Força Atômica (MFA) revelam boa aderência entre filme e substrato, com microestrutura de superfície apresentando grãos finos e esféricos e rugosidade de 4,7 nm. A constante dielétrica e o fator de dissipação, para freqüência de 100 KHz, à temperatura ambiente, foram de 77 e 0,04, respectivamente. A polarização remanescente (2Pr) e o campo coercitivo (Ec) foram 1,04 miC/cm² e 33 kV/cm. O comportamento da densidade de corrente de fuga revela três mecanismos de condução: linear, ôhmico e outro mecanismo que pode ser atribuído à corrente de Schottky. Dos padrões de DRX, análises das imagens por MEV e topografia de superfície por MFA observa-se que 10 min de tratamento térmico a 550 ºC, em forno microondas, é tempo suficiente para se obter a cristalização do filme.

Thermally activated dynamics in La2CuO4+delta: tilts of the CuO6 octahedra and interstitial O

An intense peak of the elastic energy loss versus temperature is found in La2CuO4 at 150 K (in the LTO phase), at a vibration frequency of similar to 280 Hz. From the dependence of the dissipation curve on frequency it is deduced that the relaxation rate has an activation enthalpy of 0.23 eV. The peak is ascribed to a thermally activated dynamics of the tilts of the CuO6 octahedra which form the La2CuO4 lattice, a fraction of which are supposed to be able to switch between energetically equivalent configurations. The peak is suppressed by interstitial O; this is explained by supposing that each interstitial atom can block several octahedra into a configuration that can accommodate the distortion due to its presence. Increasing the content of excess O, two new thermally activated processes develop, attributed to the hopping of interstitial O atoms which are isolated and which are paired or otherwise aggregated. The activation enthalpy for the diffusion of O at low values of 6 is 0.48 eV.

Study of the dielectric and ferroelectric properties of chemically processed BaxSr1-xTiO3 thin films

Polycrystalline BaxSr1-xTiO3 (x = 0.4 and 0.8) thin films with a perovskite structure were prepared by the polymeric precursor method on a platinum-coated silicon substrate. High-quality thin films with uniform composition and thickness were successfully produced by dip-coating and spin-coating techniques. The resulting thin films prepared by dip and spin-coating showed a well-developed dense polycrystalline structure with uniform grain size distribution. The metal-BST-metal structure of the thin films displays good dielectric and ferroelectric properties. The ferroelectric nature to BaxSr1-xTiO3 (x = 0.8) thin film, indicated by butterfly-shaped C-V curves and confirmed by the hysteresis curve, showed 2P(r) = 5.0 muC/cm(2) and E-c = 20 kV/cm. The capacitance-frequency curve reveals that the dielectric constant may reach a value of up to 794 at 1 kHz. on the other hand, the BaxSr1-xTiO3 (x = 0.4) thin films had paraelectric nature and dielectric constant and the dissipation factor at a frequency of 100 kHz were 680 and 0.01, respectively, for film annealed at 700 degreesC. In addition, an examination of the film's I-V curve at room temperature revealed the presence of two conduction regions in the BaxSr1-xTiO3 (x = 0.4 and 0.8) thin films, showing ohmic-like behavior at low voltage and a Schottky-emission or Poole-Frenkel mechanism at high voltage. (C) 2001 Elsevier B.V. B.V. All rights reserved.