Prenatal exposures to persistent organic pollutants as measured in cord blood and meconium from three localities of Zhejiang, China

Prenatal exposures to persistent organic pollutants were assessed using the levels of PCBs and organochlorine pesticides (OCPs) measured in cord blood and meconium samples from Luqiao and two other localities of the Zhejiang province in China. Luqiao is a town with the largest site for disassembly of PCB-containing obsolete transformers and electrical waste in China. The other two localities Pingqiao (100 km NW of Luqiao) and Lin'an (500 km NW of Luqiao) are towns without known electronic or electrical waste sites. A total of 23 PCB congeners (including 12 dioxin-like) and 6 OCPs were measured using the traditional GC-mu ECD technique. Micro-EROD bioassay was additionally used to measure TCDD-based TEQ levels of the 12 dioxin-like PCBs. Significant correlations were found between the TEQs measured by the two methods, supporting the application of micro-EROD as a practical toot for complementing the chemical analysis. The data showed that beta-HCH, p,p'-DDE, and 6 PCB congeners (101, 138 153, 180, 183, and 187) were the predominant pollutants, with PCB 138 being the best indicator (predictor) for total PCB levels. Cord blood and meconium from Luqiao have higher levels of PCBs than those from the other two localities, suggesting that a disassembly site for electronic and electric waste would provide an environment for greater exposure to these chemicals. The cord blood or meconium levels of beta-HCH, though likewise considerably high, were comparable in the three localities. Similar findings were observed for p,p'-DDE. Pollution by these OCPs might have come from past use of agricultural pesticides in the three localities. (c) 2007 Published by Elsevier B.V.

The temporal and spatial distribution, composition and abundance of Protozoa in Chaohu Lake, China: Relationship with eutrophication

Systematic investigations into the temporal and spatial distribution, composition and abundance of protozoa in two regions with different trophic levels in Chaohu Lake, a large, shallow and highly eutrophic freshwater lake in China, were conducted during 2002-2003. A total of 114 species of protozoa, including phytomastigophorans, zoomastigophorans, amoebae and ciliates, were identified from 120 polyurethane foam unit (PFU) samples exposed at four stations and from various types of natural substrates. Of the 114 taxa, 36 core species were found on PFU substrates and 23 of these were found on natural ones. Protozoan abundance and chemical physical parameters at nine sampling stations, four in the western lake and five in the eastern part, indicate trophic gradient changes along the lake. Seasonal variations in the species composition of major groups at littoral PFU sampling stations illustrate the effect of a severe algal bloom on the protozoan community structure. Temporal and spatial distributions of individual abundance as functions of water temperature and trophic status were revealed. This study demonstrates again that the PFU artificial substrate method samples protozoan communities more effectively than routine natural substrate methods. (c) 2005 Elsevier GmbH. All rights reserved.

Amplified fragment length polymorphism analysis to identify the genetic structure of the Gymnocypris przewalskii (Kessler, 1876) population from the Qinghai Basin, China

Amplified fragment length polymorphism (AFLP) was used to analyse the genetic structure of 45 individuals of Gymnocypris przewalskii (Kessler, 1876), an endangered and state-protected rare fish species, from three areas [the Heima (HM), Buha (BH) and Shaliu rivers (SL), all draining into Qinghai Lake]. A total of 563 polymorphic loci were detected. The HM, BH and SL populations have 435, 433 and 391 loci, respectively (Zhu and Wu, 1975), which account for 77.26%, 76.91% and 69.45% of the total number of polymorphic loci of each population, respectively. The Nei indices of genetic diversities (H) of the three populations were calculated to be 0.2869 (HM), 0.2884 (BH) and 0.2663 (SL), respectively. Their Shannon informative indices are 0.4244, 0.4251 and 0.3915, respectively. Research results show that the mean genetic distance between HM and BH is the smallest (0.0511), between BH and SL is the second shortest (0.0608), and between HM and SL is the largest (0.0713), with the mean genetic distance among the three populations being over 0.05. Data mentioned above indicate that the three populations have a certain genetic differentiation. The total genetic diversity (H-t = 0.3045) and the mean value of genetic diversity within the population (H-s = 0.2786) indicate that the variations have mainly come from within the population.

Space growth studies of Ce-doped Bi12SiO20 single crystal

Ce-doped Bi12SiO20 (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Cc concentration distribution, X-ray rocking curve absorption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one. (C) 2004 Published by Elsevier B.V.

8 mu m strain-compensated quantum cascade laser operating at room temperature

We report on the material growth and device performance characterization of a strain-compensated In0.54Ga0.46As/In0.51Al0.49As quantum cascade laser at lambda similar to 8 mu m. For 2 mu s pulse at a 5 kHz repetition rate, laser action is achieved up to room temperature (30 degrees C). The tuning coefficient d lambda/dT is 1.37 nm K-1 between 83 K and 163 K and 0.60 nm K-1 in the range from 183 K to 303 K. The peak output power is reported to be similar to 11.3 mW per facet at 293 K and the corresponding threshold current density is 5.69 kA cm(-2).

Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots

We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved.

Point defects in III-V compound semiconductors

Point defects in III-V compound semiconductors were analyzed systematically in this paper. The effects of substitutes, antisites, interstitials, and vacancies on lattice parameters in III-V compound semiconductors were calculated with a simple model. The formation energies of vacancies in compound semiconductors can be obtained by this calculation. A practical technique established on this model has been utilized for measuring the stoichiometry in GaAs. The relationship between stoichiometry and deep level centers in GaAs was also investigated.

Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors

Defects and morphologies are presented in this paper as revealed with transmission electron microscope (TEM) in the In(0.8)G(0.2)As/InAlAs heterostructure on InP(001) for high-electron-mobility transistors application. Most of the misfit dislocation lines are 60 degrees type and they deviate < 110 > at some angles to either side according to their Burges vectors. The misfit dislocation lines deviating [-110] are divided into two types according to whether their edge component b(eg) of Burges vectors in [001] pointing up or down. If b(eg) points up in the growth direction, there is the local periodical strain modulation along the dislocation line. In addition, the periodical modulation in height along [-110] on the In(0.8)G(0.2)As surface is observed, this surface morphology is not associated with the relaxation of mismatch strain.

Self-assembled InAs quantum wires on InP(001)

Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As, In0.53Ga0.47As, and (In0.52Al0.48As)(n)/(In0.53Ga0.47As)(m)-short-period-lattice matrices on InP(001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x 4 direction in the 2 x 4 reconstructed (001) surface as revealed with reflection high-energy electron diffraction (RHEED). Alignment of quantum wires in different layers in the InAs/spacer multilayer structures depends on the composition of spacer layers. (C) 2000 Elsevier Science B.V. All rights reserved.

Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy

The structural characteristics of gallium nitride (GaN) films grown on sapphire(0001) substrates by gas source molecular beam epitaxy (GSMBE) have been investigated using high-resolution synchrotron irradiation X-ray diffraction and cathodoluminescence with a variable energy electron beam. Besides the well-known GaN hexagonal structure, a small portion of cubic phase GaN was observed. The X-ray measurements provide an essential means for the structural identification of the GaN layers. Arising from the variable penetration depth of the electron beam in the cathodoluminescence measurements, it was found that the fraction of the GaN cubic-phase typically increased as the probing depth was increased. The results suggest that the GaN cubic phase is mostly located near the interface between the substrate and GaN layer due to the initial nucleation.

Electronic, structural, and optical properties of crystalline yttria

The electronic structure of crystalline Y2O3 is investigated by first-principles calculations within the local-density approximation (LDA) of the density-functional theory. Results are presented for the band structure, the total density of states (DOS), the atom-and orbital-resolved partial DOS. effective charges, bond order, and charge-density distributions. Partial covalent character in the Y-O bonding is shown, and the nonequivalency of the two Y sites is demonstrated. The calculated electronic structure is compared with a variety of available experimental data. The total energy of the crystal is calculated as a function of crystal volume. A bulk modulus B of 183 Gpa and a pressure coefficient B' of 4.01 are obtained, which are in good agreement with compression data. An LDA band gap of 4.54 eV at Gamma is obtained which increases with pressure at a rate of dE(g)/dP = 0.012 eV/Gpa at the equilibrium volume. Also investigated are the optical properties of Y2O3 up to a photon energy of 20 eV. The calculated complex dielectric function and electron-energy-loss function are in good agreement with experimental data. A static dielectric constant of epsilon(O)= 3.20 is obtained. It is also found that the bottom of the conduction band consists of a single band, and direct optical transition at Gamma between the top of the valence band and the bottom of the conduction band may be symmetry forbidden.

Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots

We have investigated the evolution of exciton state filling in InAs/GaAs quantum dot (QD) structures as a function of the excitation power density by using rnicro-photoluminescence spectroscopy at different temperatures. In addition to the emission bands of exciton recombination corresponding to the atom-like S, P and D, etc. shells of QDs, it was observed that some extra states V between the S and P shells, and D' between the P and D shells appear in the spectra with increasing number of excitons occupying the QDs at a certain temperature. The emergence of these inter-shell excitonic levels is power density and temperature dependent, which is an experimental demonstration of strong exciton-exciton exchange interaction, state hybridization, and coupling of a multi-exciton system in QDs. (c) 2006 Elsevier B.V. All rights reserved.

弱互模拟等价类算法改进

大量的硬件和软件系统广泛应用在一些重要的领域，在许多情况下错误和失效是不可接受的。需要提供方法来检验软硬件的正确性，增强我们对软硬件系统的信心。形式化验证提供了提高软硬件可靠性的方法。 互模拟等价类和弱互模拟等价类可以用来降低形式化验证中模型的规模。弱互模拟等价类有两种算法：一种是先计算迁移关系的自反传递闭包，然后调用互模拟等价类的算法。另一种是作为IGPTPartEF的一个特例，直接在原图上用划分精化的方法计算。针对这些计算弱互模拟等价类的算法，我们提出两种改进算法。 首先，我们观察到有些状态在划分精化的过程中不会被再次切分，可以事先将它们归类到一个组，在划分精化过程中以这些组为基本单位进行切分，可以在很大程度上减小算法花费的时间。我们用该思想给设计出了改进算法一。 然后，我们观察在Paige-Tarjan算法中引入了“处理比较小的一半”的思想来改进计算互模拟等价类的算法，它使得计算互模拟等价类的算法的时间复杂度从O(mn)（其中m是边数，n是顶点数）改进到O(mlgn)，而在前面所述的弱互模拟等价类算法中并没有引入“处理比较小的一半”。我们引入这一思想，设计出了改进算法二。 之后，我们设计实现了原型工具，并进行了数据实验来证实算法在时间上与原算法相比有明显改进。

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