Space growth studies of Ce-doped Bi12SiO20 single crystal
| Data(s) |
2004
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|---|---|
| Resumo |
Ce-doped Bi12SiO20 (BSO) single crystal was grown on board of the Chinese Spacecraft-Shenzhou No. 3. A cylindrical crystal, 10 mm in diameter and 40 mm in length, was obtained. The morphology of crystals is significantly different for ground- and space-grown portions. The space- and ground-grown crystals have been characterized by Cc concentration distribution, X-ray rocking curve absorption spectrum and micro-Raman spectrum. The results show that the quality of Ce-doped BSO crystal grown in space is more homogeneous and more perfect than that of ground grown one. (C) 2004 Published by Elsevier B.V. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Zhou, YF; Wang, JC; Tang, LA; Pan, ZL; Chen, NF; Chen, WC; Huang, YY; He, W .Space growth studies of Ce-doped Bi12SiO20 single crystal ,MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,NOV 15 2004,113 (3):179-183 |
| Palavras-Chave | #半导体材料 #Bridgman technique |
| Tipo |
期刊论文 |
