Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures

Polaron cyclotron resonance (CR) has been studied in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well structures in magnetic field up to 30 T. Large avoided-level-crossing splittings of the CR near the GaAs reststrahlen region, and smaller splittings in the region of the AlAs-like optical phonons of th AlGaAs barriers, are observed. Based on a comparison with a detailed theoretical calculation, the high frequency splitting, the magnitude of which increases with decreasing well width, is assigned to resonant polaron interactions with AlAs-like interface phonons.

Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface

We report on high magnetic fields (up to 40 T) cyclotron resonance, quantum Hall effect and Shubnikov-de-Hass measurements in high frequency transistors based on Si-doped GaN-AlGaN heterojunctions. A simple way of precise modelling of the cyclotron absorption in these heterojunctions is presented, We clearly establish two-dimensional electrons to be the dominant conducting carriers and determine precisely their in-plane effective mass to be 0.230 +/- 0.005 of the free electron effective mass. The increase of the effective mass with an increase of two-dimensional carrier density is observed and explained by the nonparabolicity effect. (C) 1997 American Institute of Physics.

A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors

This paper proposes a novel single electron random number generator (RNG). The generator consists of multiple tunneling junctions (MTJ) and a hybrid single electron transistor (SET)/MOS output circuit. It is an oscillator-based RNG. MTJ is used to implement a high-frequency oscillator,which uses the inherent physical randomness in tunneling events of the MTJ to achieve large frequency drift. The hybrid SET and MOS output circuit is used to amplify and buffer the output signal of the MTJ oscillator. The RNG circuit generates high-quality random digital sequences with a simple structure. The operation speed of this circuit is as high as 1GHz. The circuit also has good driven capability and low power dissipation. This novel random number generator is a promising device for future cryptographic systems and communication applications.

Sensitivity of Total-Dose Radiation Hardness of SIMOX Buried Oxides to Doses of Nitrogen Implantation into Buried Oxides

In order to improve the total-dose radiation hardness of the buried oxides(BOX) in the structure of separa tion-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI), nitrogen ions are implanted into the buried oxides with two different doses,2 × 1015 and 3 × 1015 cm-2 , respectively. The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source. Despite the small difference between the doses of nitrogen implantation, the nitrogen-implanted 2 × 1015 cm-2 BOX has a much higher hardness than the control sample (i. e. the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5 × 104rad(Si), whereas the nitrogen-implanted 3 × 1015 cm-2 BOX has a lower hardness than the control sample. However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5 × 104 to 5 × 105 rad (Si)). The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed. In addition, the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.

Fabrication of Silicon Condenser Microphone Using Oxidized Porous Silicon as Sacrificial Layer

A new technique to fabricate silicon condenser microphone is presented. The technique is based on the use of oxidized porous silicon as sacrificial layer for the air gap and the heavy p~+-doping silicon of approximately 15μm thickness for the stiff backplate. The measured sensitivity of the microphone fabricated with this technique is in the range from -45dB (5.6mV/Pa) to -55dB (1.78mV/Pa) under the frequency from 500Hz to 10kHz, and shows a gradual increase at high frequency. The cut-off frequency is above 20kHz.

Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon

The gamma-Al2O3 films were grown on Si (100) substrates using the sources of TMA (Al (CH3)(3)) and O-2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the gamma-Al2O3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was gamma-Al2O3(100)/Si(100). The thickness uniformity of gamma-Al2O3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000degreesC in O-2 atmosphere. The high-frequency C-V and leakage current of Al/gamma-Al2O3/Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick gamma-Al2O3 film on silicon increases from 17V to 53V.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers

摘要: In order to improve the total-dose radiation hardness of the buried oxide of separation by implanted oxygen silicon-on-insulator wafers, nitrogen ions were implanted into the buried oxide with a dose of 10(16)cm(-2), and subsequent annealing was performed at 1100 degrees C. The effect of annealing time on the radiation hardness of the nitrogen implanted wafers has been studied by the high frequency capacitance-voltage technique. The results suggest that the improvement of the radiation hardness of the wafers can be achieved through a shorter time annealing after nitrogen implantation. The nitrogen-implanted sample with the shortest annealing time 0.5 h shows the highest tolerance to total-dose radiation. In particular, for the 1.0 and 1.5 h annealing samples, both total dose responses were unusual. After 300-krad(Si) irradiation, both the shifts of capacitance-voltage curve reached a maximum, respectively, and then decreased with increasing total dose. In addition, the wafers were analysed by the Fourier transform infrared spectroscopy technique, and some useful results have been obtained.

Splitting the Fast and Slow Motions in Molecular Dynamics Simulations Based on the Change of Cold Potential Well Bottom

The atomic motion is coupled by the fast and slow components due to the high frequency vibration of atoms and the low frequency deformation of atomic lattice, respectively. A two-step approximate method was presented to determine the atomic slow motion. The first step is based on the change of the location of the cold potential well bottom and the second step is based on the average of the appropriate slow velocities of the surrounding atoms. The simple tensions of one-dimensional atoms and two-dimensional atoms were performed with the full molecular dynamics simulations. The conjugate gradient method was employed to determine the corresponding location of cold potential well bottom. Results show that our two-step approximate method is appropriate to determine the atomic slow motion under the low strain rate loading. This splitting method may be helpful to develop more efficient molecular modeling methods and simulations pertinent to realistic loading conditions of materials.

An efficient in vitro method for mass propagation of Potentilla potaninii wolf

This study reports a method for high-frequency shoot organogenesis and plant establishment of Potentilla potaninii Wolf. Hypocotyl and cotyledon explants of P. potaninii were cultured on Murashige and Skoog (MS) medium supplemented with various concentrations of benzyladenine (BA) and alpha-naphthaleneacetic acid (NAA) to induce adventitious shoot formation for micropropagation. The highest frequency of adventitious shoot regeneration was achieved from hypocotyl and cotyledon explants grown on MS medium supplemented with 5.0 mg l(-1) BA and 1.0 mg l(-1) NAA. The regenerated shoots rooted most efficiently on half-strength MS medium supplemented with 1.0 mg l(-1) NAA and 0.5 mg l(-1) indole-3-acetic acid or indole-3-butyric acid. The acclimatized plants with normal morphology and growth characters flowered and set seeds in the following year.

CSR数字高频分析系统的同步采样器HDL设计

本文主要阐述了CSR数字高频分析系统的同步采样器的研究、设计和实现，该分析系统是基于软件无线电技术构建的。 本文的创新点主要在于提出了一种很好的正交同步欠采样方法，这种基于软件无线电原理的I、Q两路正交同步的采样方法，主要利用了平方律部件、一阶环路滤波器和NCO来对I、Q两路采样触发脉冲上升沿的时间差进行闭环控制，从而实现对高频信号的数据采集和处理。这种方法降低了对AD芯片采样速率要求，同时也为后续的基带信号处理提供了方便。 在整个同步采样系统的实现过程中我采用了功能强大的Matlab7.0作为通信算法的仿真平台，选用了AD6645、StratixIIEP2S60和DSP6416作为主要的硬件平台，并在SynaptiCAD和ModelSim中做出了FPGA的HDL程序设计及波形实现

加速器高频误差分析系统的设计与实现

兰州重离子加速器冷却储存环的控制系统由磁场电源控制系统、真空控制系统、高频控制系统等许多子控制系统所组成。 本文所论述的对象是高频控制系统。本文所研究的主要问题，就是如何在对高频信号合理采样后，从得到的数字信息中提取出信号的有用信息。采用普通的通信接收机结构难以实现对高频信号的分析，因此应用软件无线电接收机原理，针对高频信号的特殊情况，设计实现了一个高频信号信息的分析系统。系统主要使用DSP处理器

SSC高频计算机控制系统之软件设计

高频系统是HIRFL系统中一个很重要的组成部分。其工作的稳定性和可靠性直接影响到束流的大小和品质，通过远程计算对其控制的目的不仅使人们远离现场恶劣的工作环境，而且在于提高整个系统的稳定性和可行性。高频计算机控制系统（RFC）的控制对象就是这个高频系统，它包括两个高频机和三个稳定系统：频率稳定系统、相位稳定系统、幅度稳定系统。考虑到整个系统长时间的工作状况和对稳定性和可靠性的严格要求，系统在硬件接口上选择了具有标准接口和强的扩展能力的CAMAC系统。CAMAC机箱的串行连接通过接口板2926和计算机联系在一起。在CAMAC串行总线上共有4个机箱分别负责高频机、相位、幅度和频率系统。这套系统的软件工作在Windows98操作系统平台下。有三个部分组成软件部分：一是漂亮友好交互性强的界面，这部分是通过VB和VC混合编程得来。二是功能稳定、可靠性强的接口，这部分是在VC中建立DLL来完成最终驱动。还有一部分是数据库，这个数据库是由Access生成，用于存储程序中的参数和高频系统的运行参数。这三个部分在界面程序中有机结合在一起共同完成对整套系统的控制作用。目前这套系统已经完成，运行在中控室的控制平台上，经过测试工作效果还很不错。本论文主要具体阐述了这套系统的组成，以及在程序设计时的思路、过程还有一些问题的解决办法等。