Preparation of 50mm 3C-SiC/Si(111) as Substrates Suited for Ⅲ-Nitrides

50mm SiC films with high electrical uniformity are grown on Si(111) by a newly developed vertical low-pressure chemical vapor deposition (LPCVD) reactor.Both in-situ n- and p-type doping of 3C-SiC are achieved by intentional introduction of ammonia and boron into the precursor gases.The dependence of growth rate and surface morphology on the C/Si ratio and optimized growth conditions is obtained.The best electrical uniformity of 50mm 3C-SiC films obtained by non-contact sheet resistance measurement is ±2.58%.GaN films are grown atop the as-grown 3C-SiC/Si(111) layers using molecular beam epitaxy (MBE).The data of both X-ray diffraction and low temperature photoluminescence of GaN/3C-SiC/Si(111) show that 3C-SiC is an appropriate substrate or buffer layer for the growth of Ⅲ-nitrides on Si substrates with no cracks.

Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As as Output Coupler

A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.

Stable mode-locking in an Yb:YAG laser with a fast SESAM

Stable mode-locking in a diode-pumped Yb:YAG laser was obtained with a very fast semiconductor saturable absorber mirror (SESAM). The pulse width was measured to be 4 ps at the central wavelength of 1047 nm. The average power was 200 mW and the repetition rate was 200 MHz.

Passive Q-Switching in a Flash-Lamp Pumped Nd∶YAG Laser with Ion-Implanted GaAs Wafer

A passive Q-switched flash-lamp-pumped Nd:YAG laser with the ion-implanted semi-insulating GaAs water is reported．The wafer is implanted with 400keV As~+ ions in the concentration of 10~(16)cm~(-2). Using GaAs wafer as an absorber and an output coupler．62ns pulse duration of single pulse is obtained.

In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD

The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.

880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on SESAM

We report on an 880 nm LD pumped passive mode-locked TEM00 Nd:YVO4 laser based on a semiconductor saturable absorber mirror (SESAM) for the first time. When the incident pump power was 16 W, 4.76 W average output power of continuous-wave mode-locked laser with an optical-to-optical conversion efficiency of 30% was achieved. The repetition rate of mode-locked pulse was 80 MHz with 25 ps pulse width. The maximum pulse energy and peak power were 60 nJ and 2.4 kW, respectively.

LD Side-Pumped Passive Mode-Locked TEM00 Nd:YAG Laser Based on SESAM

We report an LD side-pumped continuous-wave passive mode-locked Nd:YAG laser with a Z-type folded cavity based on a semiconductor saturable absorber mirror (SESAM). The average output power 2.95 W of mode-locked laser with electro-optical conversion efficiency of 1.3% and high beam quality (M-x(2) = 1.25 and M-y(2) = 1.22) is achieved. The repetition rate of mode-locked pulse of 88 MHz with pulse energy of 34 nJ is obtained.

不同年限蔬菜温室土壤基本化学性质比较研究

本文对沈阳市郊大民屯镇不同年限蔬菜温室土壤化学性质进行研究与分析。得到主要结论如下： 蔬菜温室0～20 cm表层土壤有机质、全氮、速效磷、速效钾、铵态氮、硝态氮均处于较高的养分水平，并且随温室使用年限的延长，呈增加的趋势。土壤有酸化的趋势，土壤电导率呈升高态势。土壤有效态Fe、Mn、Cu、Zn含量分别为8.57～60.30 mg kg-1、2.69～22.43 mg kg-1、0.64～7.52 mg kg-1和0.56～9.29 mg kg-1，变异系数为50%左右；随着温室使用年限的增加，土壤有效态Fe、Mn、Cu、Zn含量总体上呈增加的趋势。土壤Ni、Cd的有效含量随种植年限的延长趋于增加，有效Pb呈现出下降的趋势，土壤重金属Cr的有效态含量与种植年限之间没有明显的相关性。 不同年限蔬菜温室土壤剖面有机质、全氮、速效磷及速效钾含量高于相邻的露地菜田土壤，并随种植年限的延长而增加，随土层深度的增加而下降。温室土壤中铵态氮的含量随温室种植年限的变化相对较小，在土壤剖面不同层次中变化也没有明显的规律性。与露地菜田土壤相比，温室土壤中有效态铁、锰含量下降，有效态铜、锌、铅、镍含量增加。0～30 cm土层土壤交换性Ca呈下降的趋势，交换性Mg呈上升的趋势，土壤Ca/Mg比值呈下降的趋势。

下辽宁省河平原稻田生态系统的NH_3挥发和N淋溶

在地处下辽河平原的中国科学院沈阳生态实验站潮棕壤上布置施N量分别为180、240和300kg·hm~(-2)，施P量分别为70、100和130kg·hm~(-2)的稻田田间试验。应用通气密闭室法和陶土渗滤管法，测定了稻田生态系统三个不同施肥期施用氮肥后的NH3挥发损失和N淋溶，结果表明：1．水稻生长季节施用氮肥后有明显NH3挥发，总挥发量为11.64kgN·hm~(-2)-34.01kgN·hm~(-2)，占施N量的4.66％-11.66％，主要发生在施用分孽肥后，每次NH3挥发高峰出现在施氮肥后的2-4d内。2．水分渗漏对NH3挥发损失有重要影响。田面积水条件下，NH3挥发损失量及其占施N量的比率都较大，不同施N处理间差异显著（P＜0.05），NH3挥发量随施N量增加而增加；田面不积水条件下，NH3挥发损失挥发量相对较小。3．氮肥用量、田面水NH4斗一浓度和田面水pH是影响NH3挥发重要因素；180kgN·hm~(-2)条件下，积水时不同P处理间NH3挥发差异不显著。4．水稻生长季节各次施用氮肥后，60cm和gocm深处渗漏液中NH4+-N含量都小于2mg·L~(-1)，各施氮肥处理与对照间差异不显著。但NO3-淋溶比较显著，多集中在3mgN·ul-15mgN·L~(-1)之间。NO3-的淋溶随施N量增加而增加。水分渗漏状况影响N03一在不同土层深度的累积，渗水越快NO3-淋溶深度越大。渗水快或者施N量高时NO3，淋溶浓度高于国际饮用水卫生标准10mgN·L~(-1)，已有污染浅层地下水的可能。5．施用基肥后灌水，NH_4~+、NO_3~-立即出现淋溶高峰，而两次追施氮肥的淋溶高峰出现在施肥后10d或更久；并且基肥时期的淋溶浓度也比较高。

Low-timing-jitter, stretched-pulse passively mode-locked fiber laser with tunable repetition rate and high operation stability

We design a low-timing-jitter, repetition-rate-tunable, stretched-pulse passively mode-locked fiber laser by using a nonlinear amplifying loop mirror (NALM), a semiconductor saturable absorber mirror (SESAM), and a tunable optical delay line in the laser configuration. Low-timing-jitter optical pulses are stably produced when a SESAM and a 0.16 m dispersion compensation fiber are employed in the laser cavity. By inserting a tunable optical delay line between NALM and SESAM, the variable repetition-rate operation of a self-starting, passively mode-locked fiber laser is successfully demonstrated over a range from 49.65 to 50.47 MHz. The experimental results show that the newly designed fiber laser can maintain the mode locking at the pumping power of 160 mW to stably generate periodic optical pulses with width less than 170 fs and timing jitter lower than 75 fs in the 1.55 mu m wavelength region, when the fundamental repetition rate of the laser is continuously tuned between 49.65 and 50.47 MHz. Moreover, this fiber laser has a feature of turn-key operation with high repeatability of its fundamental repetition rate in practice.

Modeling study on the flow, heat transfer and energy conversion characteristics of low-power arc-heated hydrogen/nitrogen thrusters

A modeling study is conducted to investigate the effect of hydrogen content in propellants on the plasma flow, heat transfer and energy conversion characteristics of low-power (kW class) arc-heated hydrogen/nitrogen thrusters (arcjets). 1:0 (pure hydrogen), 3:1 (to simulate decomposed ammonia), 2:1 (to simulate decomposed hydrazine) and 0:1 (pure nitrogen) hydrogen/nitrogen mixtures are chosen as the propellants. Both the gas flow region inside the thruster nozzle and the anode-nozzle wall are included in the computational domain in order to better treat the conjugate heat transfer between the gas flow region and the solid wall region. The axial variations of the enthalpy flux, kinetic energy flux, directed kinetic-energy flux, and momentum flux, all normalized to the mass flow rate of the propellant, are used to investigate the energy conversion process inside the thruster nozzle. The modeling results show that the values of the arc voltage, the gas axial-velocity at the thruster exit, and the specific impulse of the arcjet thruster all increase with increasing hydrogen content in the propellant, but the gas temperature at the nitrogen thruster exit is significantly higher than that for other three propellants. The flow, heat transfer, and energy conversion processes taking place in the thruster nozzle have some common features for all the four propellants. The propellant is heated mainly in the near-cathode and constrictor region, accompanied with a rapid increase of the enthalpy flux, and after achieving its maximum value, the enthalpy flux decreases appreciably due to the conversion of gas internal energy into its kinetic energy in the divergent segment of the thruster nozzle. The kinetic energy flux, directed kinetic energy flux and momentum flux also increase at first due to the arc heating and the thermodynamic expansion, assume their maximum inside the nozzle and then decrease gradually as the propellant flows toward the thruster exit. It is found that a large energy loss (31-52%) occurs in the thruster nozzle due to the heat transfer to the nozzle wall and too long nozzle is not necessary. Modeling results for the NASA 1-kW class arcjet thruster with hydrogen or decomposed hydrazine as the propellant are found to compare favorably with available experimental data.