In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD

The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.

The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.

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Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

会议赞助商: Sci& Technol Promot Fdn Ibaraki.; Commwmorat Assoc Japan World Exposit.; Fdn Promot Mat Sci & Technol Japan.; Kansai Res Fdn Technol Promot.; Murate Sci Fdn.; Ogasawara Fdn Promot Sci & Engn.; Res Fdn Electrotechnol Chubu.; Support Ctr Adv Telecommunicat Technol Res.; Telecommunicat Adv Fdn.; ARO-Fe.; AOARD.; ONRIFO.; Cree Inc.; DENSO Corp.; Emcore Corp.; Epigress AB.; Fuji Elect Corp Res & Dev Ltd.; Furukawa Elect Co Ltd.; Hitachi Ltd.; Kansai Elect Power Co Inc.; Matsushita Elect Ind Co Inc.; Mitsubishi Elect Corp.; Mitsubishi Mat Corp.; New Japan Radio Co Ltd.; New Met & Chem Corp Ltd.; Nichia Corp.; Nippon Steel Corp.; Nissan Motor Co Ltd.; Nisso Shoji Co Ltd.; Oki Elect Ind Co Ltd.; ROHM Co Ltd.; Sanyo Elect Co Ltd.; Sharp Corp.; Shindengen Elect Mfg Co Ltd.; Shin-Etsu Hansotai Co Ltd.; Showa Denko K K.; Sony Corp.; Sterling Semiconductor Inc.; Sumitomo Corp.; Sumitomo Elect Ind Ltd.; Sumitomo Osaka Cement Co Ltd.; Toshiba Corp.; Toyoda Gosei Co Ltd.; Toyoda Cent R&D Labs Inc.; Toyo Tanso Co Ltd.; ULVAC Inc.; Universal Syst Co Ltd.