Valence hole subbands and optical gain spectra of GaN/Ga1-xAlxN strained quantum wells

The valence hole subbands, TE and TM mode optical gains, transparency carrier density, and radiative current density of the zinc-blende GaN/Ga0.85Al0.15N strained quantum well (100 Angstrom well width) have been investigated using a 6 X 6 Hamiltonian model including the heavy hole, Light hole, and spin-orbit split-off bands. At the k = 0 point, it is found that the light hole strongly couples with the spin-orbit split-off hole, resulting in the so+lh hybrid states. The heavy hole does not couple with the light hole and the spin-orbit split-off hole. Optical transitions between the valence subbands and the conduction subbands obey the Delta n=0 selection rule. At the k not equal 0 points, there is strong band mixing among the heavy hole, light hole, and spin-orbit split-off hole. The optical transitions do not obey the Delta n=0 selection rule. The compressive strain in the GaN well region increases the energy separation between the so1+lh1 energy level and the hh1 energy level. Consequently, the compressive strain enhances the TE mode optical gain, and strongly depresses the TM mode optical gain. Even when the carrier density is as large as 10(19) cm(-3), there is no positive TM mode optical gain. The TE mode optical gain spectrum has a peak at around 3.26 eV. The transparency carrier density is 6.5 X 10(18) cm(-3), which is larger than that of GaAs quantum well. The compressive strain overall reduces the transparency carrier density. The J(rad) is 0.53 kA/cm(2) for the zero optical gain. The results obtained in this work will be useful in designing quantum well GaN laser diodes and detectors. (C) 1996 American Institute of Physics.

Coupling coefficients of gain-coupled distributed feedback lasers with absorptive grating

An effective coupling efficient is introduced for gain-coupled distributed feedback lasers with absorptive grating. When radiation and other partial wave coupling effects are considered, the effective coupling coefficient will change significantly. In some cases, it will become real, although both loss and index coupling are presented.

Optical gain in zinc-blende GaN/Ga1-xAlxN strained quantum well laser

Based on the valence subbands of the zinc-blende GaN/Ga0.85Al0.15N strained quantum wells obtained by a 6x6 Hamiltonian (including heavy hole, light hole and spin-orbit splitting band), optical gain and radiative current density are calculated for the strained quantum well laser structures. The compressive strain in the GaN well region strongly depresses the TM mode optical gain and enhances the TE mode optical gain.

5.2 GHz variable-gain amplifier and power amplifier driver for WLAN IEEE 802.11a transmitter front-end

A 5.2 GHz variable-gain amplifier (VGA) and a power amplifier (PA) driver are designed for WLAN IEEE 802.11a monolithic RFIC. The VGA and the PA driver are implemented in a 50 GHz 0.35 μm SiGe BiCMOS technology and occupy 1.12×1.25 mm~2 die area. The VGA with effective temperature compensation is controlled by 5 bits and has a gain range of 34 dB. The PA driver with tuned loads utilizes a differential input, single-ended output topology, and the tuned loads resonate at 5.2 GHz. The maximum overall gain of the VGA and the PA driver is 29 dB with the output third-order intercept point (OIP3) of 11 dBm. The gain drift over the temperature varying from -30 to 85℃ converges within±3 dB. The total current consumption is 45 mA under a 2.85 V power supply.

Gain Switch of an AlGaInP Red Light Semiconductor Laser Diode

We solve the single mode coupled rate equations by computer, simulate the behavior of a gain switch of an AlGalnP red light semiconductor laser diode, and find the characteristic of FWHM of pulses changing with the amplitude of modulation signal, the bias current, and the modulated frequency. On this basis, we conduct experiments. The experiment results accord with the simulations well.

Theoretical Analysis of Gain and Threshold Current Density for Long Wavelength GaAs-Based Quantum-Dot Lasers

Quantum dot gain spectra based on harmonic oscillator model are calculated including and excluding excitons. The effects of non-equilibrium distributions are considered at low temperatures. The variations of threshold current density in a wide temperature range are analyzed and the negative characteristic temperature and oscillatory characteristic temperature appearing in that temperature range are discussed. Also,the improvement of quantum dot lasers＇ performance is investigated through vertical stacking and p-type doping and the optimal dot density, which corresponds to minimal threshold current density,is calculated.

Fabrication of semiconductor optical amplifiers and a novel gain measuring technique

The design and fabrication of 1550 nm semiconductor optical amplifiers (SOAs) and the characteristics of the fabricated SOA are reported. A novel gain measurement technique based on the integrations of the product of emission spectrum and a phase function over one mode interval is proposed for Fabry-Perot semiconductor lasers.

Generation of optimized wavelength-tunable optical pulse from an uncooled gain-switched Fabry-Perot semiconductor laser using optical amplifier as external light injection

We present a novel system design that can generate the optimized wavelength-tunable optical pulse streams from an uncooled gain-switched Fabry-Perot semiconductor laser using an optical amplifier as external light source. The timing jitter of gain-switched laser has been reduced from about 3 ps to 600 fs and the pulse width has been optimized by using our system. The stability of the system was also experimentally investigated. Our results show that an uncooled gain-switched FP laser system can feasibly produce the stable optical pulse trains with pulse width of 18 ps at the repetition frequency of 5 GHz during 7 h continuous working. We respectively proved the system feasibility under 1 GHz, 2.5 GHz and 5 GHz operation. (c) 2008 Elsevier B.V. All rights reserved.

初步的IMP重离子治疗计划系统；A Preliminary Version of Heavy Ion Treatment Planning System at IMP

中国科学院近代物理研究所基于兰州重离子研究装置(HIRFL/HIRFL-CSR),在被动型束流配送系统下采用二维分层适形照射治疗技术开展重离子治癌临床试验研究。为了更好地利用重离子束在肿瘤放射治疗中的生物物理优势并保障重离子临床治疗试验的顺利实施,一个初级版本的重离子治疗计划系统已经设计完成。此计划系统是针对被动型束流配送系统下的二维分层适形照射治疗方式来进行设计的。介绍了此系统的设计框架、可提供的功能以及利用宽束算法进行剂量计算在此系统中的实现。通过人体仿真体模实验证实由该治疗计划系统给出的靶区计划剂量与实测剂量的偏差在5%之内。最后讨论了设计较为完备的重离子治疗计划系统仍需解决的问题。

Linking territorial and coastal planning: the Venezuelan experience

Venezuela is located in central northern South America, with some 4 000 km of coastline and near 700 000 km2 of marine and submarine areas. The Venezuelan coastal zone is characterized by serious problems of land use and utilisation of its natural resources, caused by a generally anarchical spatial occupation and lack of sufficient legal and administrative means for control. In this paper, a synthesis of the Venezuelan approach to attaining a sustainable development of its marine and coastal zones is presented. This means the accomplishment of the social and economic development of the Venezuelan population in general, and specifically the coastal inhabitants, taking into account the legal and administrative patterns that govern land use planning and the utilisation of natural resources, particularly in marine and coastal areas. The paper is organised in three parts: (1) the diagnosis of the current situation; (2) the presentation of a hypothesis based on present trends (trend scenario); and (3) the statement and application of a sound and adequate solution (desirable and possible scenario).

The integration of coastal zone management into national development planning

The broad acceptance and collective commitment of countries to the tasks involved in the implementation of Agenda 21, Chapter 17, have profound implications vis-à-vis the interplay between coastal zone management (CZM) and national development planning (NDP). It appears that in many countries, CZM has evolved in isolation from the mainstream of national development processes. The paper examines various forms and elements for the effective integration of CZM into NDP.