Annealing effect on properties of ZnO thin films grown on LiNbO3 substrates by MOCVD

ZnO films were grown on (0 0 0 1) LiNbO3 substrates by metal organic chemical vapor deposition (MOCVD). Annealing of ZnO films was performed in air for I h at 800 degrees C. The effects of annealing on the structural and optical properties of ZnO thin films on LiNbO3 substrates were investigated using X-ray diffraction (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. XRD patterns and AFM showed that the as-grown and the annealed ZnO films grown on LiNbO3 substrates had c-axis preferential orientation, the crystallinity of the ZnO films grown on LiNbO3 Substrates was improved, and the grain size increased by annealing. The PL spectra showed that the intensity of the UV near-band-edge peak was increased after annealing, while the intensity of visible peak (deep-level emission) decreased. (c) 2005 Elsevier B.V. All rights reserved.

Growth and properties of ZnO thin film on beta-Ga2O3(100) substrate by pulsed laser deposition

Zinc oxide (ZnO) thin films were grown on the beta-Ga2O3 (100) substrate by pulsed laser deposition (PLD). X-ray diffraction (XRD) indicated that the ZnO films are c-axis oriented. The optical and electrical properties of the films were investigated. The room temperature Photoluminescence (PL) spectrum showed a near band emission at 3.28 eV with two deep level emissions. Optical absorption indicated a visible exciton absorption at room temperature. The as-grown films had good electrical properties with the resistivities as low as 0.02 Omega cm at room temperature. Thus, beta-Ga2O3 (100) substrate is shown to be a suitable substrate for fabricating ZnO film. (c) 2006 Elsevier B.V. All rights reserved.

Effects of gamma irradiation and air annealing on Yb-doped YAlO3 single crystals

The effects of gamma irradiation on as-grown 5 at% Yb:YAlO3 (YAP) and air annealing on gamma-irradiated 5 at% Yb: YAP have been studied by the difference in the absorption spectra before and after treatment. The gamma irradiation and air annealing led to opposite changes of the absorption properties of the Yb: YAP crystal. After air annealing, the gamma-irradiation effects were totally removed over the wavelength range 390-800 nm and the concentrations of Fe3+ and Yb3+ were slightly increased. For the first time, the gamma-irradiation-induced valence changes between Yb3+ and Yb2+ ions in Yb: YAP crystals have been observed. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optical properties of ZnO thin film on gamma-LiAlO2 substrate grown by pulsed laser deposition

Optical properties were investigated of ZnO thin films grown oil (100) gamma-LiAlO2 (LAO) substrates by pulsed laser deposition method. C-axis oriented ZnO film was grown oil (100) LAO substrate at the substrate temperature of 550 degrees C. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. Photoluminescence spectra were observed at room temperature; the peak at 550 urn is ascribed to oxygen vacancies in the ZnO films caused by the diffusion of Li from the substrate into the film during deposition. (c) 2005 Elsevier B.V. All rights reserved.

Preparation and spectroscopic properties of Er3+-doped high silica glass fabricated by sintering nanoporous glass

A compact nonporous high silica (SiO2 % > 96%) glass containing 3400 ppm Er3+ ions, which was about ten times higher than that in Er-doped silica fiber amplifier (EDSFA), was synthesized by sintering porous glass immersed into erbium nitrate solution. The 1532 nm fluorescence has a FWHM (Full Width at Half Maximum) of 45 nm wider than that of EDSFA and possesses the glass with potential application in broadband fiber amplifiers. The Judd-Ofelt theoretical analysis reflects that Er3+ ions are located in a higher covalent environment which are comparable to those of aluminosilicate glass. (c) 2005 Elsevier B.V. All rights reserved.

Preparation of crystalline beta barium borate thin films on Sr2+-doped alpha barium borate substrates by liquid phase epitaxy

Thin films of beta barium borate have been prepared by liquid phase epitaxy on Si2+-doped alpha-BaB2O4 (alpha-BBO, the high temperature phase of barium berate) (001) and (110) substrates. The results of X-ray diffraction indicate that the films show highly (001) preferred orientation on (001)-oriented substrates while the films grown on (110) substrates are textured with (140) orientation. The crystallinity of these films was found to depend on growth temperature, rotation rate, dip time and orientation of substrate. Growth conditions were optimized to grow films with (001) orientation on (001) substrates reproducibly. The films show second harmonic generation of 400 nm light upon irradiation with 800 nm Ti: Sapphire femtosecond laser light. (c) 2005 Elsevier B.V. All rights reserved.

Blue-yellow ZnO homostructural light-emitting diode realized by metalorganic chemical vapor deposition technique

We report on the realization of ZnO homojunction light-emitting diodes (LEDs) fabricated by metalorganic chemical vapor deposition on (0001) ZnO bulk substrate. The p-type ZnO epilayer was formed by nitrogen incorporation using N2O gas as oxidizing and doping sources. Distinct electroluminescence (EL) emissions in the blue and yellow regions were observed at room temperature by the naked eye under forward bias. The EL peak energy coincided with the photoluminescence peak energy of the ZnO epilayer, suggesting that the EL emissions emerge from the ZnO epilayer. In addition, the current-voltage and light output-voltage characteristics of ZnO homojunction LEDs have also been studied. (c) 2006 American Institute of Physics.

Broadband near-infrared emission from transparent Ni2+-doped sodium aluminosilicate glass ceramics

Broadband neat-infrared emission from transparent Ni2+-doped sodium aluminosilicate glass-cermaics is observed. The broad emission is centered at 1290 nm and covers the whole telecommunication wavelength region (1100-1700 nm) with full width at half maximum of about 340 nm. The observed infrared emission could be attributed to the T-3(2)(F) -> (3)A(2)(F) transition of octahedral Ni2+ ions that occupy high-field sites in nanocrystals. The product of the lifetime and the stimulated emission cross section is 2.15 x 10(-24) cm(2)s. It is suggested that Ni2+-doped sodium aluminosilicate glass ceramics have potential applications in tunable broadband light sources and broadband amplifiers.

辅助水热法制备不同形貌的柱状ZnO微晶(英文)

本文采用乙醇辅助水热法制备得到了柱状ZnO微晶。得到的微晶形貌多样，有单脚、三脚、四脚、五脚、六脚以及多脚状，并以“骨架＋支架”模型进行解释。X射线衍射分析结果表明产物为纯的六方相纤锌矿结构，扫描电子显微镜（SEM）观察表明产物具有单晶属性。本文还研究了ZnO的室温光谱性能。

高度C轴取向的ZnO膜的低温水热法制备

在预先镀有ZnO纳米层的（0001）蓝宝石衬底上利用低温水热法制备出ZnO薄膜。SEM和XRD显示此ZnO膜是由六棱柱状阵列构成的，基于蓝宝石衬底生长，具有高度的c轴择优取向，且（0004）摇摆曲线的FWHM达到1．8°。并发现了在水热溶液中加入一定量六次甲基四胺可以调节六棱柱状ZnO尺寸比例。

Comparison of ZnO films grown on before- and after-vapor transport equilibration (VTE) LiAlO2 substrates by pulsed laser deposition (PLD)

About Phi 45 mm LiAlO2 single crystal was grown by Czochralski (Cz) technique. However, the full-width at half-maximum (FWHM) value was high to 116.9 arcsec. After three vapor transport equilibration (VTE) processes, we can obtain high-quality LiAlO2 slice with the FWHM value of 44.2 arcsec. ZnO films were fabricated on as-grown slices and after-VTE ones by pulsed laser deposition (PLD). It was found that ZnO films on the two slices have similar crystallinity, optical transmittance and optical band gap at room temperature. These results not only show that LAO substrate is suitable for ZnO growth, but also prove that the crystal quality of LAO substrate slightly affects the structural and optical properties of ZnO film.

柱状ZnO阵列薄膜的生长及其发光特性

采用一种设备简单、原料低廉的新型方法，在镀有ZnO先驱薄膜的（0001）蓝宝石上利用水热法制备出了柱状ZnO阵列薄膜．用扫描电镜（SEM），X射线衍射（XRD）对样品的形貌和结构进行了表征，结果显示ZnO薄膜为柱状阵列，基于蓝宝石衬底沿c轴择优生长，且（0004）摇摆曲线半高宽度（FWHM）约为1.8°。此ZnO阵列薄膜具有很强的紫外发射光谱（PL）．

Spectroscopic properties of Nd3+-doped high silica glass prepared by sintering porous glass

A new kind of Nd3+, -doped high silica glass (SiO2 > 96% (mass fraction)) was obtained by sintering porous glass impregnated with Nd3+, ions. The absorption and luminescence properties of high silica glass doped with different Nd3+, concentrations were studied. The intensity parameters Omega(t) (t = 2, 4, 6), spontaneous emission probability, fluorescence lifetime, radiative quantum efficiency, fluorescence branching ratio, and stimulated emission cross section were calculated using the Judd-Ofelt theory. The optimal Nd3+ concentration in high silica glass was 0.27% (mole fraction) because of its high quantum efficiency and emission intensity. By comparing the spectroscopic parameters with other Nd3+ doped oxide glasses and commercial silicate glasses, the Nd3+-doped high silica glasses are likely to be a promising material used for high power and high repetition rate lasers.

High quantum efficiency and high concentration erbium-doped silica glasses fabricated by sintering nanoporous glasses

A new method was used to prepare erbium-doped high silica (SiO2% > 96%) glasses by sintering nanoporous glasses. The concentration of erbium ions in high silica glasses can be considerably more than that in silica glasses prepared by using conventional methods. The fluorescence of 1532 nm has an FWHM (Full Wave at Half Maximum) of 50 nm, wider than 35 nm of EDSFA (erbium-doped silica fiber amplifer), and hence the glass possesses potential application in broadband fiber amplifiers. The Judd-Ofelt theoretical analysis reflects that the quantum efficiency of this erbium-doped glass is about 0.78, although the erbium concentration in this glass (6 x 103) is about twenty times higher than that in silica glass. These excellent characteristics of Er-doped high silica glass will be conducive to its usage in optical amplifiers and microchip lasers.

Cooperative and charge transfer luminescence in Yb3+ -doped yttrium aluminum perovskite (YAlO3)

YAlO3 (YAP) crystals with different Yb3+ concentration have been grown by Czochralski method and cooperative fluorescence of Yb3+ ions in YAP crystal was studied under 940-nm infrared (IR) LD excitation at room temperature. The Yb concentration dependence of absorption intensity of IR and charge transfer bands exhibit different features. The green emission band in the region of 480-520nm was assigned to the cooperative deexcitation of two Yb3+ ions. The remaining upconverted emission bands containing various sharp peaks associated with impurity ions were observed and discussed. Charge transfer luminescence of heavily doped 20at% Yb:YAP is strongly temperature dependent and no concentration quenching of the charge transfer luminescence was found through the investigation of different Yb levels samples. (c) 2006 Elsevier B.V. All rights reserved.