Influence of the lateral confining potential on the ballistic electron transport in a quantum wire

A theoretical investigation of ballistic electron transport in a quantum wire with soft wall confinement is presented. A general method of the electron transmission calculation is proposed for structures with complicated geometries. The effects of the lateral guiding potential on ballistic transport are investigated using three soft wall confinement models and the results are compared with those obtained from the hard wall confinement approximation. It is shown that the calculated transmission coefficients are notably dependent on the lateral confining potential especially when the incident electron energy is larger than the energy of the second transverse mode. It is found that the transmission profile obtained from soft wall confinement models exhibits simpler resonance structures than that obtained from the hard wall confinement approximation. Our results suggest that only in the single-channel regime the hard wall confinement approximation can give reasonable results.

EER studies of the single quantum well GaAs/AlxGa1-xAs electrode/nonaqueous solution interface

The interfacial behavior of the single quantum well (SQW) GaAs/AlxGa1-xAs electrode in HQ/BQ and Fc/Fc(+) electrolytes was characterized respectively by studying the quantum confined Stark effect and Franz-Keldysh oscillation with electrolyte electroreflectance spectroscopy. The interaction of the surface state of the SQW electrode with redox species and its effects on the distribution of external bias at the interface of the SQW electrode are discussed.

Formation of Fe-N films containing Fe6N2 phase by ion beam assisted deposition

Fe-N films were deposited on Si(100) and GaAs(100) substrates at room temperature by ion beam assisted deposition under various N/ Fe atomic arrival ratio, 0.09, 0.12, 0.15. The results of X-ray diffraction indicated that the film deposited at 0.12 of N/Fe arrival ratio contained a considerable fraction of the Fe16N2 phase which had grown predominantly in the [001] orientation. For the larger N/Fe arrival ratio, a martensite phase with 15 at.% nitrogen was obtained. It was found that a lower deposition temperature (<200 degrees C) was necessary for the formation of the Fe16N2 phase.

1.55μm偏振不灵敏光放大器结构材料的生长

采用张应变量子阱结构，生长了光放大器材料。利用宽接触激光器TE和TM模的输出功率曲线判断并调整量子阱材料的应变量，得到了偏振灵敏度较低的光放大器结构。

InGaAs/InAlAs多量子阱结构的量子限制Stark效应研究

通过吸收光电流谱的测量,观察到用国产MBE设备生长的与InP衬底晶格匹配的InGaAs/InAlAs多量子阱结构的量子限制Stark效应及其与光偏振方向有关的各向异性电吸收特性,报道了可用于波导型调制器制作的MQW样品材料的X射线双晶衍射结果,并用计算机模拟出与实测十分相似的曲线,得到了可靠的量子阱结构,证明样品材料具有优良的外延质量.利用等效无限深阱模型进行的理论计算表明,应考虑样品p-i-n结内建电场的影响,才能使算出的吸收边红移与实验值符合.

气态源分子束外延（AlGa）InP和GaInP/AlInP多量子阱材料

于2010-11-23批量导入

Electronic structure and optical property of semiconductor nanocrystallites

Semiconductor nanostructures show many special physical properties associated with quantum confinement effects, and have many applications in the opto-electronic and microelectronic fields. However, it is difficult to calculate their electronic states by the ordinary plane wave or linear combination of atomic orbital methods. In this paper, we review some of our works in this field, including semiconductor clusters, self-assembled quantum dots, and diluted magnetic semiconductor quantum dots. In semiconductor clusters we introduce energy bands and effective-mass Hamiltonian of wurtzite structure semiconductors, electronic structures and optical properties of spherical clusters, ellipsoidal clusters, and nanowires. In self-assembled quantum dots we introduce electronic structures and transport properties of quantum rings and quantum dots, and resonant tunneling of 3-dimensional quantum dots. In diluted magnetic semiconductor quantum dots we introduce magnetic-optical properties, and magnetic field tuning of the effective g factor in a diluted magnetic semiconductor quantum dot. (C) 2004 Elsevier B.V. All rights reserved.

模型论在代数上的应用

给出了模型论在代数上的两个应用,得到了下列定理:定理A:如环R的任何有限生成子环均是局部环,则R是局部环.定理B:存在自然数的真扩张R使其具有下列特征:(1)虽然R有无限多零因子,但R中有无限多零因子,但R中的首1多项式的根的个数可以得到很好的控制.(2)R不仅将自然数的素数特征保留下来,而且还可在其上定义指数函数。

丘陵半干旱区春小不知所云水肥耦合效应

采用312-D最优饱和设计，在丘陵半干旱区开展了连续4年的田间试验，深入地研究了春小麦水肥祸合效应。水肥单因子对产量和水分利用效率（WUE）有显著影响，大小顺序为：水＞磷＞氮，其中三个因子对产量的提高均是正效应，而对WUE的提高，氮、磷施用量是正效应，过量灌溉是负效应；两因子间祸合作用的强弱顺序为：氮与水祸合＞氮与磷祸合＞磷与水祸合，其中氮与磷祸合，以及氮与水祸合对提高产量和认心E均表现为极显著相互促进作用，而磷与水祸合表现为不显著的相互替代作用。水肥祸合通过提高气孔导度（Gs）、蒸腾速率（Tr）、叶表面相对湿度（RH）、叶内水浓度（Hi）和降低胞间COZ浓度（Ci），来提高叶片光合速率（Pn）。氮素营养缺乏引起叶片“光合午休”现象的发生，增加施氮量可以避免“光合午休”现象的发生。籽粒产量与灌浆期叶片Pn呈正相关。水肥单因子对叶片Pn影响的大小顺序是：氮＞磷＞水；因子间藕合作用强弱顺序为：氮与水棍合＞磷与水祸合＞氮与磷祸合。水肥优化管理是提高产量、叶片Pn及WUE的重要途径。中等用量的氮、磷、水藕合可以达到高产、高效，获得较高的WUE和叶片Pn，实现节水高产高效与较高叶片Pn的统一，为春小麦科学灌溉施肥提供了理论依据。