Mechanism on exciton-mediated energy transfer in erbium-doped silicon

Exciton-mediated energy transfer model in Er-doped silicon was presented. The emission intensity is related to optically active Er concentration, lifetime of excited Er3+ ion and spontaneous emission. The thermal quenching of the Er luminescence in Si is caused by thermal ionization of Er-bound exciton complex and nonradiative energy back-transfer processes, which correspond to the activation energy of 6.6 and 47.4 meV, respectively. Er doping in silicon introduces donor states, a large enhancement in the electrical activation of Er (up to two orders of magnitude) is obtained by co-implanting Er with O. It appears that the donor states are the gateway to the optically active Er. (C) 2000 Elsevier Science B.V. All rights reserved.

Influence of lateral propagating modes on laser output characteristics in selectively oxidized vertical cavity surface-emitting lasers with double oxide layers

The influence of lateral propagating modes on the threshold current and the spontaneous emission factor in selectively oxidized vertical cavity surface-emitting lasers (VCSELs) is investigated based on the mode behaviors of lateral propagating modes and the rate equation model. The numerical results show that the lateral propagating modes may be trapped in the aperture region for the selectively oxidized VCSEL with two oxide layers, one above and one below the active region. The output characteristics of VCSELs can be affected due to the reabsorption of the quasitrapped lateral propagating modes. A lower threshold current can be expected for a VCSEL with double oxide layers than that with a single oxide layer. The numerical results of rate equations also show that a larger spontaneous emission factor can be obtained by fitting the output-input curves for the VCSEL with double oxide layers. (C) 1999 American Institute of Physics. [S0021-8979(99)07919-0].

Radiation of dressed excitons in the semiconductor microcavity

In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multiparticle process. Through the quantum electrodynamics method, the dipole emission density and system energy decayed equation were obtained. And it was predicted that the excitons decay into a very narrow mode when the exciton-cavity coupling becomes strong enough.

Magnetoexciton polaritons in planar semiconductor microcavities

We study the magnetoexciton polaritons in planar semiconductors microcavities by a quantum approach developed in the strong and weak magnetic-field limits. Ht is shown that the vacuum Rabi splittings with different Landau level indices are close to each other and tend to be proportional to B at sufficiently large values of the magnetic field. Also, we show that the calculated results are in good agreement with the experimental observations. [S0163-1829(99)10215-7].

Metamorphosis of self-organized quantum dots into quantum wires

Spontaneous formation of InAs quantum wires in InAlAs on InP(001) via sequential chain-like coalescence of quantum dots along [1 (1) over bar 0] is realized. Theoretical calculations based on the energetics of interacting steps provide a qualitative explanation for the experimental results. Sequential coalescence of initially isolated dots reduces the total free energy strikingly. Thus the wire-like structure is energetically favorable. (C) 1998 Elsevier Science B.V.

Thermal activation and thermal transfer of localized excitons in InAs self-organized quantum dots

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 monolayer (ML) to 3 ML. The temperature dependence of the InAs exciton energy and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML, indicating spontaneous formation of quantum dots (QDs). A model, involving exciton recombination and thermal activation and transfer, is proposed to explain the experimental data. In the PL thermal quenching study, the measured thermal activation energies of different samples demonstrate that the InAs wetting layer may act as a barrier for thermionic emission of carriers in high quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to thermally escape from the localized states. (C) 1998 Academic Press Limited.

Superluminescent diode monolithically integrated with novel Y-branch by bundle integrated waveguide for fiber optic gyroscope - art. no. 68380D

We have developed a novel InP-based, ridge-waveguide photonic integrated circuit (PIC), which consists of a 1.1-um wavelength Y-branch optical waveguide with low loss and improved far field pattern and a 1.3-um wavelength strained InGaAsP-InP multiple quantum-well superluminescent diode, with bundle integrated guide (BIG) as the scheme for monolithic integration. The simulations of BIG and Y-branches show low losses and improved far-field patterns, based on the beam propagation method (BPM). The amplified spontaneous emission of the device is up to 10 mW at 120 mA with no threshold and saturation. Spectral characteristics of about 30 nm width and less than I dB modulation are achieved using the built-in anti-lasing ability of Y-branch. The beam divergence angles in horizontal and vertical directions are optimized to as small as 12 degrees x8 degrees, resulting in good fiber coupling. The compactness, simplicity in fabrication, good superluminescent performance, low transmission loss and estimated low coupling loss prove the BIG and Y-branch method to be a feasible way for integration and make the photonic integrated circuit of Y-branch and superluminescent diode an promising candidate for transmitter and transceiver used in fiber optic gyroscope.

Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy

The influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy (XPS) is discussed, and a modification method based on a modified self-consistent calculation is proposed to eliminate the influence and thus increasing the precision of XPS. Considering the spontaneous polarization at the surfaces and interfaces and the different positions of Fermi levels at the surfaces, we compare the energy band structures of Al/Ga-polar AlN/GaN and N-polar GaN/AlN heterojunctions, and give corrections to the XPS-measured valence band offsets. Other AlN/GaN heterojunctions and the piezoelectric polarization are also introduced and discussed in this paper.

Color center conversion by femtosecond pulse laser irradiation in LiF : F-2 crystals

We report the observation of intense spontaneous emission of green light from LiF:F-2:F-3(+) centers in active channel waveguides generated in lithium fluoride crystals by near-infrared femtosecond laser radiation. While irradiating the crystal at room temperature with 405 nm light from a laser diode, yellow and green emission was seen by the naked eye. Stripe waveguides were fabricated by translating the crystal along the irradiated laser pulse, and their guiding properties and fluorescence spectra at 540 nm demonstrated. This single-step process inducing a waveguide structure offers a good prospect for the development of a waveguide laser in bulk LiF crystals.

染料掺杂聚合物薄膜放大自发发射和受激发射的研究

随着有机／聚合物电致发光材料在有机发光二极管上的应用以及有机晶体管和有机太阳能电池的研制成功，有机／聚合物电致发光材料的优异的光电性能、低廉的生产成本、简单的加工工艺、宽广的选材范围和良好的机械性能等优点极大地吸引科学家们的研究兴趣，并开始了有机／聚合物发光薄膜的放大的自发发射和受激发射行为的研究。有机分子和聚合物的诸多如易得、廉价、结构多样、功能易调节、大的横截面积、高的荧光量子效率和低的自吸收等优点使其制成的激光器在未来光纤通讯领域中呈现了诱人的应用前景。新的有机激光材料不断涌现、器件结构不断推陈出新、新的激发原理不断提出并得到修正已经成为有机／聚合物固体激光研究领域的三大特点。本论文以研究有机材料的激光特性为目的，通过对有机染料DCJTB和三芳胺取代1，8-蔡酰亚胺齐聚物掺杂聚合物薄膜的放大的自发发射和受激发射特性的研究，探讨实现低闭值、高增益光泵浦有机聚合物激光的方法及影响器件性能的因素，阐明放大自发发射的工作机制，为进一步探讨电泵浦有机聚合物激光器提供材料体系和理论依据。1、研究了DCJTB掺杂聚合物薄膜的放大自发发射特性，分析了光泵浦条件下光谱窄化的放大自发发射机制，对ASE增益和损耗进行了讨论和数值拟合，并对增益方程进行了饱和修正。DCJTB：PS薄膜具有较低的闺值（0．16mJ·Pulse~(_1)·cm-2）、高的增益系数（40．72cm-1）、低的损耗值2．49cm一l和高的荧光量子效率（70．4％），其波导增益的波长分布呈明显的洛仑兹分布，增益饱和是均匀展宽的。与DCM比较发现，自由体积是决定材料性能的重要因素，大的自由体积有利于实现低闭值、高增益。我们的研究结果表明，DCJTB是非常好的激光介质材料。2、从ASE的发射波长、ASE闭值、增益和损耗四个技术指标出发，详细研究了激发光波长、聚合物基体、旋涂速度及基片等对DCJTB：PS薄膜放大自发发射（ASE）的影响，短的激发波长和合适的基体材料可以显著地降低闭值和提高增益，薄膜厚度和基片也对ASE性能有很大影响。利用琢lord镜面体系，研究了DCJTB染料掺杂相列向液晶体系的分布反馈激光特性，在电场作用下，可以有效地对TE、TM两种模式的输出强度进行调解。3、把电子传输／发光有机小分子材料Alq3掺杂到DCJTB和C545T掺杂聚合物薄膜，研究了它们的放大自发发射特性。通过在不同激发光波长激发下不同Alq3掺杂浓度对ASE性能影响的研究，发现掺杂Alq3显著地降低了闭值，增加了增益和减小了损耗。由于Alq3是一种良好的半导体有机发光材料，Alq3的引入对电泵浦有机聚合物激光器的研究具有重要的意义。4、研究了三种在4位氨基位置引入不同三芳胺功能基团的红光1，8-蔡酞亚胺齐聚物的放大自发发射特性，研究结果表明，三芳胺取代1，8蔡酞亚胺齐聚物具有低阂值、高增益和低损耗的特点，显示了较小的浓度淬灭效应，即使掺杂浓度高到60％仍可以观察到放大的自发发射现象，表明三芳胺取代1，8茶酞亚胺是一类非常有应用前景的有机半导体激光材料体系。

Deviation from the stoichiometric composition of single-crystal 'Er2Co17'

The deviation from the stoichiometric composition of single-crystal 'Er2Co17' has been determined by theoretical analysis. It is found that the composition of this single-crystal 'Er2Co17' is rich in cobalt, and its real composition is suggested to be Er2-deltaCo17+2 delta (delta = 0.14) on the basis of a comparison of calculations based on the single-ion model with a series of experiments. The values of the Er-Co exchange field H-ex and the crystalline-electric-field (CEF) parameters A(n)(m) at the rare-earth (R) site in the 'Er2Co17' compound are also evaluated at the same time. The experiments provide the following data: the temperature dependence of the spontaneous magnetization of the compounds and the normalized magnetic moment of the Er ion, the magnetization curves dong the crystallographic axes at 4.2 K and 200 K, and the temperature dependence of the magnetization along the crystallographic axes in a field of 4 T.

Far-field and beam characteristics of vertical-cavity surface-emitting lasers

We have determined the far-field patterns and beam parameters of vertical-cavity surface-emitting lasers (VCSELs) with different structures. The results show that the window diameter and the active-layer aperture of VCSELs strongly influence laser far-field distributions and beam characteristics; for VCSELs with small window omega=5 mu m, only one dominant lobe has been observed in the far-field profiles, even though injected current was increased up to 2 Ith; and the smaller the ratio of the window diameter to the active-layer aperture, the larger is the far-field divergence. The laser structure dependence of the K factor has also been studied. (C) 1996 American Institute of Physics.

Measurement of Cavity Loss and Quasi-Fermi-Level Separation for Fabry-Perot Semiconductor Lasers

A fitting process is used to measure the cavity loss and the quasi-Fermi-level separation for Fabry- Perot semiconductor lasers. From the amplified spontaneous emission (ASE) spectrum, the gain spectrum and single-pass ASE obtained by the Cassidy method are applied in the fitting process. For a 1550nm quantum well InGaAsP ridge waveguide laser, the cavity loss of about ～24cm~(-1) is obtained.

Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures

Photoluminescence (PL) and temperature-dependent Hall effect measurements were carried out in (0001) and (11 (2) over bar0) AlGaN/GaN heterostructures grown on sapphire substrates by metalorganic chemical vapor deposition. There are strong spontaneous and piezoelectric electric fields (SPF) along the growth orientation of the (0001) AlGaN/GaN heterostructures. At the same time there are no corresponding SPF along that of the (1120) AlGaN/GaN. A strong PL peak related to the recombination between two-dimensional electron gas (2DEG) and photoexcited holes was observed at 3.258 eV at room temperature in (0001) AlGaN/GaN heterointerfaces while no corresponding PL peak was observed in (11 (2) over bar0). The existence of a 2DEG was observed in (0001) AlGaN/GaN multi-layers with a mobility saturated at 6000 cm(2)/V s below 80 K, whereas a much lower mobility was measured in (11 (2) over bar0). These results indicated that the SPF was the main element to cause the high mobility and high sheet-electron-density 2DEG in AlGaN/GaN heterostructures. (C) 2004 Elsevier B.V. All rights reserved.

Coupled AlxGa1-xAs-AlAs distributed Bragg reflectors for high brightness AlGaInP light emitting diodes

A novel coupled distributed Bragg reflector (DBR) with double thickness periods was theoretically analyzed based on the spontaneous radiation properties of high brightness AlGaInP light emitting diodes(LED). Several important factors were considered including spontaneous radiation angle distribution, absorption and FTR of DBR. Calculation results showed that the optimum optical thickness of single layer of the DBR deviates from 1/4 lambda. AIGaInP high brightness light emitting diodes both with Al0.5Ga0.5As/AlAs coupled DBR and with conventional DBR were fabricated by metalorganic chemical vapor deposition(MOCVD). X-ray double crystal diffraction and reflection spectrum were employed to determine the thickness and reflectivity of the DBR. It was found that reflectivity of coupled DBR is less sensitive to incident angle than conventional DBR, higher external quantum efficiency of light emitting diodes with coupled DBR was obtained than that with conventional DBR.