Radiation of dressed excitons in the semiconductor microcavity


Autoria(s): Liu SA; Lin SM; Wang QM
Data(s)

1999

Resumo

In this paper, we introduced the dressed exciton model of the semiconductor micro-cavity device. In the semiconductor micro cavity of vertical-cavity surface-emission device, the excitons first coupled with the cavity through an intra-electromagnetic field and formed the dressed excitons. Then these dressed excitons decayed into the vacuum cavity optical mode, as a multiparticle process. Through the quantum electrodynamics method, the dipole emission density and system energy decayed equation were obtained. And it was predicted that the excitons decay into a very narrow mode when the exciton-cavity coupling becomes strong enough.

Identificador

http://ir.semi.ac.cn/handle/172111/12864

http://www.irgrid.ac.cn/handle/1471x/65402

Idioma(s)

英语

Fonte

Liu SA; Lin SM; Wang QM .Radiation of dressed excitons in the semiconductor microcavity ,ACTA PHYSICA SINICA-OVERSEAS EDITION,1999,8(7):514-520

Palavras-Chave #半导体物理 #SPONTANEOUS EMISSION
Tipo

期刊论文